Preliminary Product Brief
November 20 03
AGR09060E
60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09060E is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for cellular
band, code-division multiple access (CDMA), global
system for mobile communication (GSM), enhanced
data for global evolution (EDGE), and time-division
multiple access (TDMA) single and multicarrier class
AB wireless base station amplifier applications.This
device is manufactured on an advanced LDMOS
technology, offering state-of-the-art performance,
reliability, and best-in-class thermal resistance. Pack-
aged in an industry-standard package and capable of
delivering a minimum output power of 60 W , it is ide-
ally suited for today's RF power amplifier applica-
tions.
Figure 1. Available Packages
Features
■Typical performance ratings are for IS-95 CDMA,
pilot, sync, paging, traffic codes 8—13:
— Output powe r (POUT): 14 W.
— Power gain: 17.5 dB.
— Efficiency: 28% .
— Adjacent ch annel power ratio (ACPR) for
30 kHz bandwidth (BW):
(750 kHz offset: –45 dBc)
(1.98 MHz offset: –60 dBc).
— Return loss: 10 dB.
■High-reliability gold-metalization process.
■High gain, efficiency, and linearity.
■Integrated ESD protection.
■Si LDMOS.
■Industry-standard packages.
■60 W minimum output power.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adverse ly affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22- A114B (HBM), JESD22-A 115A (MM), and
JESD22-C101A (CDM ) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR09060EU (unflanged) AGR09060EF (flanged)
Parameter Sym Value Unit
Thermal Resistance,
Junction to Case:
AGR09060EU
AGR09060EF RθJC
RθJC 1.1
TBD °C/W
°C/W
Parameter Sym Value Unit
Drain-source V oltage VDSS 65 Vdc
Gate-source V oltage VGS –0.5, 15 Vdc
Total Dissipation at TC = 25 °C:
AGR09060EU
AGR09060EF PD
PD159
TBD W
W
Derate Above 25 °C:
AGR09060EU
AGR09060EF —
—TBD
TBD W/°C
W/°C
Operating Junction Tempera-
ture TJ200 °C
S torage Temperature Range TSTG –65, 150 °C
AGR09060E Minimum (V) Class
HBM 500 1B
MM 50 A
CDM 1500 4
Copyright © 2003 Agere Systems Inc.
All Rights Reserved
November 2003
PB04-010RFPP (Replaces PB03-084RFPP)
Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application.
Agere is a registered trademark of Agere Systems Inc. Agere Systems and the Agere logo are trademarks of Agere Systems Inc.
For additional information, contact your Agere Systems Account Manager or the following:
INTERNET: http://www.agere.com
E-MAIL: docmaster@agere.com
N. AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109-9138
1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-712-4106)
ASIA: Agere Systems Hong Kong Ltd., Suites 3201 & 3210-12, 32/F, Tower 2, The Gateway, Harbour City, Kowloon
Tel. (852) 3129-2000, FAX (852) 3129-2020
CHINA: (86) 21-5 047-12 12 (Shanghai), (86) 755-25881122 (Shenzhen)
JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-1850 (Seoul), SINGAPORE: (65) 6778-8833, TAIWAN: (886) 2-2725-5858 (Taipei)
EUROPE: Tel. (44) 1344 296 400
60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET November 2003
AGR09060E Preliminary Product Brief
RF Power Product Information
For product and application information, please visit our website: http://www.agere.com/rfpower.
