MLE12002CP - Lansdale Semiconductor, Inc.

www.lansdale.comPage 1 of 9 Issue A

ML12002

Analog Mixer

Legacy Device: Motorola MC12002

The ML12002 is a double balanced analog mixer, includ-

ing an input amplifier feeding the mixer carrier port and a

temperature compensated bias regulator. The input circuits

for both the amplifier and mixer are differential amplifier

circuits. The on-chip regulator provides all of the required

biasing.

This circuit is designed for use as a balanced mixer in

high-frequency wide-band circuits. Other typical applica-

tions include suppressed carrier and amplitude modulation,

synchronous AM detection, FM detection, phase detection,

and frequency doubling, at frequencies up to UHF.

There are two package offerings:

• Plastic Dual Inline 14 Lead, P Dip.

• Plastic Surface Mount 14 Lead SOIC.

• Operating Temperature Range: TA= –30° to +85°C

P DIP 14 = CP

PLASTIC PACKAGE

CASE 646

14

1

SOG 14 = -5P

SOG

CASE 751A

CROSS REFERENCE/ORDERING INFORMATION

MOTOROLA

P DIP 14 MC12002P ML12002CP

SOG 14 MC12002D ML12002-5P

LANSDALEPACKAGE

Note: Lansdale lead free (Pb) product, as it

becomes available, will be identified by a part

number prefix change from ML to MLE.

(Top View)

PIN CONNECTIONS

1

2

3

4

5

6

78

9

10

11

12

13

14 VCC

Resistor Load

Data Output

Regulator

Bypass

Mixer Signal

Input

Mixer Signal

Input

Regulator

Bypass

Local Oscillator

Input

Local Oscillator

Input

Alternate Signal

Input

Null Adjust

VEE

Figure 1. Logic Diagram

2

3

8

9

Local

Oscillator

Inputs

Signal

Inputs

Amplifier

VBVR

Bias

Regulator

Carrier

Port

Mixer

Signal

Port

VRVB

12

11 Output

LANSDALE Semiconductor, Inc.

ML12002

www.lansdale.comPage 2 of 9 Issue A

TEST VOLTAGE VALUES

Volts

VIHmax VILmin VCC

ELECTRICAL CHARACTERISTICS +2.9 +2.0 +5.0

Test Limits

VOLTAGE APPLIED TO PINS

LISTED BELOW

Under –30°C +25°C +85°C

Characteristic Symbol

Under

Test Min Max Min Max Min Max Unit VIHmax VILmin VCC Gnd

Power Supply Drain ICC 14 — — — 16 — — mAdc — — 11,12,14 5,6,7

Input Current IinH 2

3

8

9

—

0.75

—

mAdc

2

3

8

9

—

11,12,14

5,6,7

IinL 2

3

8

9

—

– 0.7

—

mAdc

—

2

3

8

9

11,12,14

5,6,7

Output Current IO111

12

—

0.7

1.3

—

mAdc

—

11,12,14

7

IO211

12

—

2.1

3.9

—

mAdc

—

11,12,14

5,6,7

Iout11

11

12

—

4.2

7.8

— —

—

mAdc

2,9

3,8

2,8

3,9

—

11,12,14

5,6,7

Differential Current ∆IO1

∆IO2

11,12

–100

–200

+100

+200

–100

–200

+100

+200

–100

–200

+100

+200

µAdc

—

11,12,14

7

5,6,7

Bias Voltage VBias 1

4

5

6

10

2.33

390

275

1.26

2.53

590

415

1.46

2.32

400

285

1.185

2.52

600

425

1.385

2.3

410

295

1.105

2.5

610

435

1.305

Vdc

mVdc

Vdc

—

11,12,14

5,6,7

7

5,6,7

Pulse

In

Pulse

Out –3.0 V Gnd VEE

AC Gain (See Figure 1) AV11 — — 5.0 — — — V/V 2 11 9 14 7

(Frequency =

100 MHz) *Note

11 — — 0.28 — — — V/V 8 11 3 14 7

NOTE: *Note: AC Gain is a function of collector load impedance.

LANSDALE Semiconductor, Inc.

ML12002

www.lansdale.comPage 3 of 9 Issue A

LANSDALE Semiconductor, Inc.

ML12002

www.lansdale.comPage 4 of 9 Issue A

All Input and output

cables to the scope are

equal lengths of 50-ohm

coaxial cable.

Notes:

Test 1 – Adjust potentiometer for carrier null at fc = 100 kHz.

Test 2 – Connect pins 5 and 6 to Gnd.

Sampling Volt meter

Hewlett Packard

3406A or Equiv.

Tektronix

454 and 568

Oscilloscopes

Hewlett Packard

651A and 3300B

100 kHz to 100 MHz

@ 30 mVpp

Signal A

Input (Pin 2)

Output (Pin12)

Output (Pin 11)

Signal B Input (Pin 8)

Output (Pin 12)

Output (Pin 11)

Figure 4. Carrier Feedthrough Test Circuits

12

11

Outputs

Null

AdjustVCC

6 14571 10

VEE

Reg.

Bypass

Local Oscillator

Inputs

2

3

8

9

Mixer

Inputs

1.0

µ

f

1.0

µ

f

1.0

µ

f

0.1

µ

f

0.1

µ

f50

+5.0 V

0.1

µ

f

133 133

LANSDALE Semiconductor, Inc.

ML12002

www.lansdale.comPage 5 of 9 Issue A

1.0 K100.010.01.00.1

–50

fc, CARRIER FREQUENCY (MHz)

+40

+30

+20

+10

0

–10

–20

–30

–40

–60

fc, CARRIER FREQUENCY (MHz)

1.0 K100.010.0

+40

+30

+20

+10

0

–10

–20

–30

–40

–50

–60

0.1 1.0

fc, CARRIER FREQUENCY (MHz)

10.0 100.01.0

100.010.01.00.1

0.0

1.0

2.0

3.0

4.0

0.1

fc, CARRIER FREQUENCY (MHz)

5.0

4.0

3.0

2.0

0.0

5.0

1.0

)]smr[Vm( EGATLOV TUPTUO REIRRAC , V TFC

)]s

mr

[

V

m( E

G

ATL

O

V TUP

TU

O R

E

IRRAC ,

V T

F

C

)

Bd

(

NO

I

S

ER

P

PUS

R

E

IR

RAC

)Bd( NOISSERPPUS REIRRA

C

– 5.0 V

All input and output

cables to the scope are

equal lengths of 50-ohm

coaxial cable.

X 50

Atten. 50

50

11

12

Outputs

VEE VCC

Null

Adjust

Reg.

Bypass

Mixer

Inputs

Local Oscillator

Inputs

1.0

µ

f

+

–– 5.0 V

50

14657101

Hewlett

Packard

TEE 11536A

Hewlett Packard 3406A

Sampling Voltmeter

Hewlett Packard

651A 10 kHz

@ 150 mV R.M.S.

Hewlett Packard

651A and 3300B

100 kHz to 400 MHz

@ 30 mV RMS.

9

1.0

µ

f

0.1

µ

f

50

2

3

0.1

µ

f

1.0

µ

f

8

1.0

µ

f

Notes:

Test 1 – Adjust potentiometer for carrier null @ fc = 100 kHz

Test 2 – Connect pins 5 and 6 to –5.0 volts

Test 3 – Adjust potentiometer for carrier null @ 25°C

Figure 5. Carrier Feedthrough versus Frequency

(Test 1)

Figure 6. Carrier Feedthrough versus Frequency

(Test 2)

Figure 7. Carrier Suppression Test Circuit

Figure 8. Carrier Suppression versus Frequency

(Test 1)

Figure 9. Carrier Suppression versus Frequency

(Test 2)

LANSDALE Semiconductor, Inc.

ML12002

www.lansdale.comPage 6 of 9 Issue A

Notes:

Test 1 – Pins 5 and 6 left open

Test 2 – Pins 5 and 6 are tied to –5.0 volts

TA, AMBIENT TEMPERATURE (

°

C)

+125+100+75+50+250–25–55

–60

–50

–40

–30

–20

–10

fc = 10 MHz @ 30 mvrms

fs = 10 KHz @ 150 mvrms

)B

d(

N

OISSE

RPPU

S

REIR

RA

C

Local Oscillator

Inputs

3

2

1.0

µ

f

1.0

µ

f

1.0

µ

f

Mixer

Inputs

Reg.

Bypass

1.0

µ

f

8

9

0.1

µ

f

101

VEE

0.1

µ

f

–5.0 V

0.1

µ

f

7

IOO = I11 – I12

14

VCC

56

Outputs

12

I12

µ

A

I11

11

µ

A

Null

Adjust

I

TEST 1

TA, AMBIENT TEMPERATURE (

°

C)

+125+100+75+50+250–25–55

–100

–50

0.0

+50

+100

TEST 2

)A

( TNERRUC

T

ES

F

FO TU

P

TU

O

,

IOO

µ

1

6

21

26

16

31

1000800600

f, FREQUENCY (MHZ)

400200

50

100

150

200

250

300

350

400

11

)smh

O(

ECN

ATS

I

SER R L

C

R

Zin

R(OHMS)

)

F

p(

E

C

NATICA

P

AC ,C

TYPICAL INPUT IMPEDANCE

vs

FREQUENCY

R

– LOCAL OSCILLATOR –

AND SIGNAL INPUTS

C

Figure 10. Carrier Suppression versus Temperature

Figure 11a. Output Offset Current (I

00) versus Temperature

Figure 12. Output Offset Current versus Temperature Figure 13. Typical Input Impedance versus Frequency

(No Circuit)

LANSDALE Semiconductor, Inc.

ML12002

www.lansdale.comPage 7 of 9 Issue A

RF out

RF input

AGC

MOD

input

+V

V2

5V

R3

10k 40%

C8

.1uF

P3

P2

P1

C7

1uF

C6

1nF

C5

1nF

C4

1nF

C3

1nF

C2

1nF

C1

1nF

+V

V1

5V

ML12002

byp P1

LOin P2

LOin P3

altin P4

null P5

null P6

gnd P7 sigin

P8

sigin

P9

byp

P10

rfout

P11

rfout

P12

load

P13

vcc

P14

U1

R4

1k

R2

50 R1

50

Figure 11b. Application Circuite Using ML12002 as a AM Modulator

LANSDALE Semiconductor, Inc.

ML12002

www.lansdale.comPage 8 of 9 Issue A

P DIP 14 = CP

PLASTIC PACKAGE

(ML12002CP)

CASE 646–06

ISSUE M

17

14 8

B

A

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.715 0.770 18.16 18.80

B0.240 0.260 6.10 6.60

C0.145 0.185 3.69 4.69

D0.015 0.021 0.38 0.53

F0.040 0.070 1.02 1.78

G0.100 BSC 2.54 BSC

H0.052 0.095 1.32 2.41

J0.008 0.015 0.20 0.38

K0.115 0.135 2.92 3.43

L

M––– 10 ––– 10

N0.015 0.039 0.38 1.01

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION L TO CENTER OF LEADS WHEN

FORMED PARALLEL.

4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.

5. ROUNDED CORNERS OPTIONAL.

F

HG D

K

C

SEATING

PLANE

N

–T–

14 PL

M

0.13 (0.005)

L

M

J

0.290 0.310 7.37 7.87

OUTLINE DIMENSIONS

LANSDALE Semiconductor, Inc.

ML12002

www.lansdale.comPage 9 of 9 Issue A

SOG 14 = -5P

(ML12002-5P)

CASE 751A-03

-A-

-B- P 7 PL

G

C

K

SEAT-

ING

PLANE

MJ

R X 45

17

814

T

F

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENSIONS A AND B DO NOT INCLUDE MOLD

PROTRUSION

4. MAXIMUM HOLD PROTRUSION 0.15 (0.006) PER

SIDE

5. DIMENSION D DOES NOT INCLUDE DAMBAR

PROTRUSION ALLOWABLE DAMBAR

PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN

EXCESS OF THE D DIMENSION AT MAXIMUM

MATERIAL CONDITION

DIM

INCHES MILLIMETERS

MIN MAX MIN MAX

A 8.55 8.75 0.337 0.334

B 3.80 4.00 0.150 0.157

C 1.35 1.75 0.054 0.068

D 0.35 0.49 0.014 0.019

F 0.40 1.25 0.016

G 1.27 BSC 0.050 BSC

0.049

J 0.19 0.25 0.008 0.009

K 0.10 0.25 0.004 0.009

P 5.80 6.20 0.228 0.244

R 0.25 0.50 0.010 0.019

M 0° 7° 0° 7°

0.25 (0.010) B

M

0.25 (0.010) B A

MSS

M

OUTLINE DIMENSIONS

Lansdale Semiconductor reserves the right to make changes without further notice to any products herein to improve reliabili-

ty, function or design. Lansdale does not assume any liability arising out of the application or use of any product or circuit

described herein; neither does it convey any license under its patent rights nor the rights of others. “Typical” parameters which

may be provided in Lansdale data sheets and/or specifications can vary in different applications, and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by the customer’s

technical experts. Lansdale Semiconductor is a registered trademark of Lansdale Semiconductor, Inc.