UNISONIC TECHNOLOGIES CO., LTD
2SB772S PNP EPITAXIAL SILICON TRANSISTOR
www.unisonic.com.tw 1
Copyright © 2005 Unisonic Technologies Co., LTD QW-R208-002.B
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
The UTC 2SB772S is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SD882S
SOT-89
1
*Pb-free plating product number: 2SB772SL
PIN CONFIGURATION
PIN NO. PIN NAME
1 Emitter
2 Collector
3 Base
ORDERING INFORMATION
Order Number
Normal Lead free
Package Packing
2SB772S-AB3-R 2SB772SL-AB3-R SOT-89 Tape Reel
2SB772S PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2
www.unisonic.com.tw QW-R208-002.B
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER SYMBOL RATINGS UNIT
Collector -Base Voltage VCBO -40 V
Collector -Emitter Voltage VCEO -30 V
Emitter -Base Voltage VEBO -5 V
Peak Collector Current ICM -7 A
DC Collector Current IC -3 A
Base Current IB -0.6 A
Power Dissipation PD 1.0 W
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -40 ~ +150 ℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current ICBO V
CB=-30V,IE=0 -1000 nA
Emitter Cut-Off Current IEBO V
EB=-3V,Ic=0 -1000 nA
DC Current Gain(Note 1) hFE1
hFE2 VCE=-2V,Ic=-20mA
VCE=-2V,Ic=-1A 30
100 200
150
400
Collector-Emitter Saturation Voltage VCE(sat) Ic=-2A,IB=-0.2A -0.3 -0.5 V
Base-Emitter Saturation Voltage VBE(sat) Ic=-2A,IB=-0.2A -1.0 -2.0 V
Current Gain Bandwidth Product fT V
CE=-5V,Ic=-0.1A 80 MHz
Output Capacitance Cob VCB=-10V,IE=0,f=1MHz 45 pF
Note 1: Pulse test: PW<300µs, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK Q P E
RANGE 100 ~ 200 160 ~ 320 200 ~ 400
2SB772S PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3
www.unisonic.com.tw QW-R208-002.B
■ TYPICAL CHARACTERICS
Fi g. 1 St atic charac t eri s ti c s
-C ollec tor-Emitter v oltage (V )
-Collect or curre nt, Ic (A)
04 8121620
0
0.4
0.8
1.2
1.6
Cas e T em per ature, Tc (
℃
)
-I
B
=1mA
-I
B
=2mA
-I
B
=3mA
-I
B
=4mA
-I
B
=5mA
-I
B
=6mA
-I
B
=7mA
-I
B
=8mA
-I
B
=9mA
Fi g. 2 Derat i ng curv e of s afe
operat ing areas
- Ic De rating (% )
200150100500-50
0
50
100
150
S/b limited
Dissipation limited
Case Temperature, Tc (
℃
)
200150100500-50
Fig.3 Power Derating
Power Dissipation(W)
0
4
8
12
Fi g.4 C ol l ect or Out put
capacitance
-C ollec t or- B as e V oltage(v)
Output Capacitance(pF)
10 010-1 10-2 10-3
101
102
103
100
I
E
=0
f=1MHz
Fi g.5 Current gai n-
bandwidt h product
C urren t ga in-
bandwidth product, f
T
(MHz)
101
102
103
100
V
CE
=5V
Collec tor-E m itt er V oltage
-Coll ect or curren t, Ic (A)
Fi g.6 S af e O perat i ng A rea
Ic(max),DC
Ic(max),Pulse
10mS
1mS
0.1mS
Co ll ector cu rren t, Ic (A)
10-2 10-1 10 010110-2
10-1
10 0
101
10 0101102
I
B
=8mAI
B
=8mA
2SB772S PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 4
www.unisonic.com.tw QW-R208-002.B
TYPICAL CHARACTERICS(cont.)
Fig.7 DC current gai n
-Col lector c ur r ent, I c ( m A ) -C ollec tor c ur r e nt, Ic ( mA)
Fig .8 Saturation Voltage
D C current Gain, H
FE
101
102
103
100
-Saturation Voltage (mV)
V
CE
=-2V
V
CE
(sat)
V
BE
(sat)
100101102103104100101102103104
100
101
102
103
104
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this docum ent does not form part of any quotation or contract, is believed to be accurate
and relia ble and may b e changed without notic e.
