70502TN (KT)/71598HA (KT)/D251MH/5147KI/3135KI/O193KI, TS No.779-1/5
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
160V/140mA High-Voltage Switching
and AF 100W Predriver Applications
Ordering number:ENN779D
2SA1209/2SC2911
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
( ) : 2SA1209
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
Package Dimensions
unit:mm
2009B
[2SA1209/2SC2911]
Features
· Adoption of FBET process.
· High breakdown voltage.
· Good linearity of hFE and small Cob.
· Fast switching speed.
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 081)–(V
egatloVrettimE-ot-rotcelloCV
OEC 061)–(V
egatloVesaB-ot-rettimEV
OBE 5)–(V
tnerruCrotcelloCI
C041)–(Am
)esluP(tnerruCrotcelloCI
PC 002)–(Am
noitapissiDrotcelloCP
C1W
01W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
˚C
˚C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
*: The 2SA1209/2SC2911 are classified by 10mA hFE as follows : Continued on next page.
Tc=25˚C
knaRRST
hEF 002ot001082ot041004ot002
8.04.0
7.011.0
1.5
15.5 3.0
1.6
0.80.8
0.6 0.5
2.7
4.8
2.4
1.2
123
3.0
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V08)–(= E0=1.0)–(Aµ
tnerruCffotuCrettimEI
OBE VBE I,V4)–(= C0=1.0)–(Aµ
niaGtnerruCCDh
EF VEC I,V5)–(= CAm01)–(=*001*004
tcudorPhtdiwdnaB-niaGf
TVEC I,V01)–(= CAm01)–(=051zHM
ecnaticapaCtuptuOC
bo VBC zHM1=f,V01)–(=0.3)0.4(Fp
No.779-2/5
2SA1209/2SC2911
Continued from preceding page.
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,Am05)–(= BAm5)–(= 70.0 )41.0–( 3.0 )4.0–( V
emiTNO-nruTt
no tiucriCtseTdeificepseeS1.0sµ
emiTllaFt
ftiucriCtseTdeificepseeS1.0sµ
emiTegarotSt
gts tiucriCtseTdeificepseeS5.1sµ
ITR03021
IC -- VCE
0 --10 --20 --30 --40 --50 --60 --70 0 10 20 30 40 50 60 70
0
--20
--40
--60
--80
--100
--120
--140
0
--20
--40
--60
--80
--100
--120
--140
20
0
40
60
80
100
120
140
0
20
40
60
80
100
120
140
ITR03022
IC -- VCE
ITR03024
ITR03023
--
0.4
--
0.6
--
0.8
--
1.0
--
0.20 0.4 0.6 0.8 1.00.20
IC -- VBE
--0.1mA
--0.2mA
--0.3mA
--0.4mA
--0.5mA
--0.6mA
IB=0
2SA1209 2SC2911
0.1mA
0.2
mA
0.3mA
0.4mA
0.5mA
0.6mA
IB=0
IC -- VBE
2SA1209 2SC2911
Collector Current, IC–mA
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Base-to-Emitter Voltage, VBE –V
Collector Current, IC–mA
Base-to-Emitter Voltage, VBE –V
Switching Test Circuit
IN OUT
20V
50Ω
3kΩ
5kΩ2kΩ
1µF1µF
--2V
IC=10IB1=--10IB2=10mA
++
(For PNP, the polarity is reversed.)
RB
IB1
IB2
No.779-3/5
2SA1209/2SC2911
Cob -- VCB
ITR03030
ITR03032
ITR03029
ITR03031
23 57 75
--10--1.0 --100
23
10
1.0
2
3
2
3
7
5
5
7
100
23 57 75
101.0 100
23
10
1.0
2
3
2
3
7
5
5
7
100
--0.1
--1.0
2
3
3
2
7
5
2
5
7
0.1
1.0
2
3
2
7
5
3
5
7
Cob -- VCB
ITR03028
fT -- IC
fT -- IC
100
10
3
2
3
2
5
7
ITR03027
ITR03025
hFE -- IC
57753257322
--10 --100--1.0
573257322
--10 --100--1.0
100
10
3
2
3
2
5
7
573257322
10 1001.0
1000
5
3
7
100
10
2
5
3
7
2
57753257322
10 1001.0
1000
5
3
7
100
10
2
5
3
7
2
hFE -- IC
ITR03026
2SA1209
VCE=--5V 2SC2911
VCE=5V
2SC2911
VCE=10V
2SA1209
VCE=--10V
2SA1209
f=1MHz
VCE(sat) -- IC
--1.0
57 57 75
--10 --100
223231.0
57 57 75
10 100
22323
VCE(sat) -- IC
2SC2911
f=1MHz
2SC2911
IC / IB=10
2SA1209
IC / IB=10
Common Emitter DC Current Gain, hFE
Collector Current, IC–mA
Common Emitter DC Current Gain, hFE
Collector Current, IC–mA
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–mA
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–mA
Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB -- V
Collector Current, IC–mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
Collector Current, IC–mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
No.779-4/5
2SA1209/2SC2911
VBE(sat) -- IC
ITR03033
--1.0 --10
57 --100
7222335 751.0 10
57 100
7222335 75
0 20 40 60 80 100 120 160140
VBE(sat) -- IC
PC -- Ta
ITR03034
ITR03036
2SA1209
IC / IB=10
--1.0
--10
3
7
5
3
2
5
7
A S O
ITR03035
10 100
723 5 723 5 23 5
10
2
3
5
7
100
2
3
5
2
3
5
7
0
0.2
0.4
0.8
0.6
1.2
1.0
1.0
10
3
5
7
5
3
2
7
2SC2911
IC / IB=10
2SA1209 / 2SC2911
1ms
1s
DC operation
ICP=200mA
IC=140mA
No heat sink
0 20 40 60 80 100 120 160140
PC -- Tc
ITR03037
0
2
4
8
6
12
10
2SA1209 / 2SC2911
2SA1209 / 2SC2911
DC Single pulse
Collector Current, IC–mA
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Collector Current, IC–mA
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
(For PNP, minus sign is omitted.)
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Dissipation, P
C
–W
Ambient Temperature, Ta – ˚C
Collector Dissipation, P
C
–W
Case Temperature, Tc – ˚C
PS No.779-5/5
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2002. Specifications and information herein are subject to
change without notice.
2SA1209/2SC2911
