Single Phase AC Controller PSW1C50 IRMS = 50 A
Subassemblies VRRM= 800-1600 V
Preliminary Data Sheet
Features
•Planar glass passivated chips
•Low forward voltage drop
•Leads suitable for PC board
soldering
Applications
•Solid state relays
Advantages
•Space and weight savings
•Improved temperature and power
cycling capability
•High power density
•Small and light weight
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Subassembly
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Data according to IEC 60747 refer to a single thyristor unless otherwise stated
Symbol Test Conditions Maximum Ratings
VRSM V
RRM Type
VDSM VDRM
(V) (V)
900 800 PSW1C 50/08
1300 1200 PSW1C 50/12
1500 1400 PSW1C 50/14
1700 1600 PSW1C 50/16
IRMS TC = 85°C; 50-400Hz (per phase) 50 A
ITRMS TVJ = TVJM 36 A
ITAVM TC = 85 °C; 180° sine 23 A
ITSM TVJ = 45 °C t = 10 ms (50 Hz), sine 520 A
VR = 0 t = 8.3 ms (60 Hz), sine 570 A
TVJ = 125 °C t = 10 ms (50 Hz), sine 460 A
VR = 0 t = 8.3 ms (60 Hz), sine 500 A
∫∫
∫∫
∫ i2 dt TVJ = 45 °C t = 10 ms (50 Hz), sine 1350 A²s
VR = 0 t = 8.3 ms (60 Hz), sine 1350 A²s
TVJ = 125 °C t = 10 ms (50 Hz), sine 1050 A²s
VR = 0 t = 8.3 ms (60 Hz), sine 1030 A²s
(di/dt)cr TVJ = 125 °C repetitive, IT = 150 A 150 A/µs
f=50Hz, tP=200µs
VD=2/3VDRM
IG=0.3 A non repetitive,IT = ITAVM 500 A/µs
diG/dt=0.5A/µs
(dv/dt)cr TVJ = 125 °C VD=2/3VDRM 1000 V/µs
RGK= ∞, method 1 (linear voltage rise)
PGM TVJ = 125 °C tP=30µs ≤10 W
IT =ITAVM tP=300µs ≤5W
PGAVM 0.5 W
VRGM 10 V
TVJ -40... + 125 °C
TVJM 125 °C
Tstg -40... + 125 °C
Weight typ. 8 g
http://store.iiic.cc/
Subassembly
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Symbol Test Conditions Characteristic Value
ID,IRTVJ = 125°C, VR = VRRM, VD=VDRM ≤5mA
VTIT = 80 A, TVJ = 25 °C ≤1.65 V
VTO For power-loss calculations only 0.85 V
rT11 mΩ
VGT VD=6V TVJ= 25°C ≤1.0 V
TVJ=-40°C ≤1.6 V
IGT VD=6V TVJ= 25°C ≤100 mA
TVJ=-40°C ≤150 mA
VGD TVJ= 125°C VD=2/3VDRM ≤0.2 V
IGD TVJ= 125°C VD=2/3VDRM ≤5mA
ILTVJ= 25°C, tP=10µs, VD=6V ≤200 mA
IG=0.3A, diG/dt=0.3A/µs
IHTVJ= 25°C, VD=6V, RGK= ∞≤150 mA
tgd TVJ= 25°C, VD=1/2VDRM ≤2µs
IG=0.3A, diG/dt=0.3A/µs
tqTVJ= TVJM; IT=20A; tp=200µs;di/dt=-10A/µs typ. 15 0 µ s
VR=100V; dv/dt=15V/µs; VD=2/3VDRM
RthJC per Thyristor; DC 1.1 K/W
per module 0.55 K/W
aMax. allowable acceleration 50 m/s²
http://store.iiic.cc/
