AP2332GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Small Package Outline Surface Mount Device S Halogen Free & RoHS Compliant Product SOT-23 BVDSS 600V RDS(ON) 300 ID 27mA G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. G S The SOT-23 package is widely used for commercial-industrial applications. Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 600 V +20 V 3 27 mA 3 21 mA Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current 100 mA PD@TA=25 Total Power Dissipation 0.5 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 250 /W 1 201008022 AP2332GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 600 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=16mA - - 300 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=10V, ID=16mA - 28 - mS IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA 1.8 2.5 3.2 nC 2 Qg Total Gate Charge ID=0.1A Qgs Gate-Source Charge VDS=200V - 1.3 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 0.8 - nC VDS=300V - 11.5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=10mA - 14.5 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 14 - ns tf Fall Time RD=30k - 120 - ns Ciss Input Capacitance VGS=0V 8.8 12.5 16.2 pF Coss Output Capacitance VDS=25V 7 10 13 pF Crss Reverse Transfer Capacitance f=1.0MHz 5 7 9 pF Min. Typ. - - Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage Test Conditions IS=0.05A, VGS=0V Max. Units 1.5 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2332GN-HF 40 30 ID , Drain Current (mA) 30 10V 9.0V 8.0V 7.0V V G = 6.0V o T A = 150 C 10V 9.0V 8.0V 7.0V 20 V G = 6.0V ID , Drain Current (A) o T A = 25 C 20 10 10 0 0 0.0 2.0 4.0 6.0 8.0 0.0 2.0 4.0 6.0 8.0 10.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.3 2.8 I D =16mA V G =10V 2.4 Normalized RDS(ON) Normalized BVDSS (V) 1.2 1.1 1 2.0 1.6 1.2 0.9 0.8 0.4 0.8 -50 0 50 100 -50 150 o Fig 3. Normalized BVDSS v.s. Junction 50 100 150 Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 0.5 2.0 0.4 1.5 T j =150 o C Normalized VGS(th) (V) IS(A) 0 T j , Junction Temperature ( o C) T j , Junction Temperature ( C) T j =25 o C 0.3 0.2 1.0 0.5 0.0 0.1 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2332GN-HF 12 f=1.0MHz 20 16 8 C (pF) VGS , Gate to Source Voltage (V) I D =0.1A V DS =200V 10 C iss 12 6 C oss 8 C rss 4 4 2 0 0 0 0.4 0.8 1.2 1.6 2 2.4 1 2.8 5 Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 1ms Operation in this area limited by RDS(ON) 10ms 0.01 100ms 1s DC 0.001 o T A =25 C Single Pulse Normalized Thermal Response (Rthja) 1 0.1 ID (A) 9 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Duty factor=0.5 0.2 0.1 0.1 PDM t 0.05 T Duty factor = t/T Peak Tj = PDM x Rthja + T a 0.02 Rthja = 250/W 0.01 Single Pulse 0.01 0.0001 1 10 100 1000 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 90% 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Circuit 4