Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 600V
▼ Small Package Outline RDS(ON) 300Ω
▼ Surface Mount Device ID27mA
▼ Halogen Free & RoHS Compliant Product
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃mA
ID@TA=70℃mA
IDM mA
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3250 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
1
Operating Junction Temperature Range -55 to 150
Continuous Drain Current3, VGS @ 10V 21
Pulsed Drain Current1100
Storage Temperature Range
Total Power Dissipation 0.5
-55 to 150
Gate-Source Voltage +20
Continuous Drain Current3, VGS @ 10V 27
Parameter Rating
Drain-Source Voltage 600
AP2332GN-HF
201008022
Halogen-Free Product
D
G
S
SOT-23
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is widely used for commercial-industrial applications.
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 600 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=16mA - - 300 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V
gfs Forward Transconductance VDS=10V, ID=16mA - 28 - mS
IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=0.1A 1.8 2.5 3.2 nC
Qgs Gate-Source Charge VDS=200V - 1.3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 0.8 - nC
td(on) Turn-on Delay Time2VDS=300V - 11.5 - ns
trRise Time ID=10mA - 14.5 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 14 - ns
tfFall Time RD=30kΩ- 120 - ns
Ciss Input Capacitance VGS=0V 8.8 12.5 16.2 pF
Coss Output Capacitance VDS=25V 7 10 13 pF
Crss Reverse Transfer Capacitance f=1.0MHz 5 7 9 pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=0.05A, VGS=0V - - 1.5 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2332GN-HF
AP2332GN-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
I
D=16mA
VG=10V
0.1
0.2
0.3
0.4
0.5
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0.0
0.5
1.0
1.5
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
0
10
20
30
40
0.0 2.0 4.0 6.0 8.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (mA)
TA=25oC10V
9.0V
8.0V
7.0V
VG=6.0V
0
10
20
30
0.0 2.0 4.0 6.0 8.0 10.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC10V
9.0V
8.0V
7.0V
VG=6.0V
0.8
0.9
1
1.1
1.2
1.3
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
AP2332GN-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Circuit
4
0
4
8
12
16
20
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0
2
4
6
8
10
12
0 0.4 0.8 1.2 1.6 2 2.4 2.8
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=0.1A
VDS =200V
Q
VG
10V
QGS QGD
QG
Charge
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 250℃/W
tT
0.02
0.0001
0.001
0.01
0.1
1
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
1ms
10ms
100ms
1s
DC
td(on) trtd(off)tf
VDS
VGS
10%
90%
Operation in this area
limited by RDS(ON)
