IXGH50N120C3 - Zilog - Datasheet.Live

G = Gate C = Collector

E = Emitter TAB = Collector

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

BVCES IC= 250μA, VGE = 0V 1200 V

VGE(th) IC= 250μA, VCE = VGE 3.0 5.0 V

ICES VCE = VCES 100 μA

VGE = 0V TJ = 125°C 2 mA

IGES VCE = 0V, VGE = ±20V ±100 nA

VCE(sat) IC = 40A, VGE = 15V, Note 1 4.2 V

TJ = 125°C 2.6 V

Features

zInternational standard packages:

JEDEC TO-247AD

zIGBT and anti-parallel FRED in one

package

zMOS Gate turn-on

- drive simplicity

Applications

zAC motor speed control

zDC servo and robot drives

zDC choppers

zUninterruptible power supplies (UPS)

zSwitch-mode and resonant-mode

power supplies

DS99996(06/08)

IXGH50N120C3

Preliminary Technical Information

VCES = 1200V

IC110 = 50A

VCE(sat) ≤≤

≤≤

≤ 4.2V

tfi(typ) = 64ns

GenX3TM 1200V IGBT

High speed PT IGBTs

for 20 - 50 kHz switching

TO-247 (IXGH)

GCE

TAB

Symbol Test Conditions Maximum Ratings

VCES TJ= 25°C to 150°C 1200 V

VCGR TJ= 25°C to 150°C, RGE = 1MΩ1200 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC= 25°C (limited by leads) 75 A

IC110 TC= 110°C50 A

ICM TC= 25°C, 1ms 250 A

IATC= 25°C 40 A

EAS TC= 25°C 750 mJ

SSOA VGE= 15V, TJ = 125°C, RG = 3Ω ICM = 100 A

(RBSOA) Clamped inductive load @VCE≤ ≤

≤ ≤

≤ 1200V

PCTC= 25°C 460 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

MdMounting torque 1.13 / 10 Nm/lb.in.

TL Maximum lead temperature for soldering 300 °C

TSOLD 1.6mm (0.062 in.) from case for 10s 260 °C

Weight 6 g

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH50N120C3

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

gfs IC = 40A, VCE = 10V, Note 1 24 40 S

Cies 4190 pF

Coes VCE = 25V, VGE = 0V, f = 1MHz 330 pF

Cres 130 pF

Qg 196 nC

Qge IC = 50A, VGE = 15V, VCE = 0.5 • VCES 24 nC

Qgc 84 nC

td(on) 20 ns

tri 34 ns

Eon 2.2 mJ

td(off) 123 ns

tfi 64 ns

Eoff 0.63 1.2 mJ

td(on) 20 ns

tri 35 ns

Eon 4.3 mJ

td(off) 170 ns

tfi 315 ns

Eoff 2.1 mJ

RthJC 0.27 °C/W

RthCK 0.21 °C/W

Inductive load, TJ = 125°°

°°

°C

IC = 40A, VGE = 15V

VCE = 600V, RG = 2Ω

Note 1

Inductive load, TJ = 25°°

°°

°C

IC = 40A, VGE = 15V

VCE = 600V, RG = 2Ω

Note 1

Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

e

∅ P

TO-247 (IXGH) Outline

1 2 3

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

IXGH50N120C3

Fi g . 1. Ou tp u t C h ar acter i sti cs

@ 25ºC

0

10

20

30

40

50

60

70

80

90

100

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

5V

9V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

25

50

75

100

125

150

175

200

225

250

275

0 3 6 9 12 15 18 21 24 27 30

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

13V

7V

9V

11V

5V

Fig. 3. Output Characteristics

@ 125ºC

0

10

20

30

40

50

60

70

80

90

100

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

V

CE

- Volts

I

C

- Amperes

V

GE

= 15

V

13

V

11

V

7V

5V

9V

Fig. 4. Dependence of V

CE(sat)

on

Junction T em perature

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 100A

I

C

= 50A

I

C

= 25A

Fi g . 5. Co l l ect or -to -Emi tt er V ol tag e

vs. Gate-to -Emitter Vo ltag e

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

8.0

56789101112131415

V

GE

- Volts

V

CE

- Volts

I

C

= 100

A

T

J

= 25ºC

50

A

25

A

Fig. 6. Input Admittance

0

10

20

30

40

50

60

70

80

90

4.04.55.05.56.06.57.07.5

V

GE

- Volts

I

C

-

Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH50N120C3

IXYS REF: G_50N120C3(7N)6-03-08

Fig. 7. Transconductance

0

5

10

15

20

25

30

35

40

45

50

55

60

0 102030405060708090100

I

C

- Amperes

g f s -

Siemens

T

J

= - 40ºC

25ºC

125ºC

Fi g . 10. R ever se-B i as Sa fe Op er ati n g Area

0

10

20

30

40

50

60

70

80

90

100

110

200 400 600 800 1000 1200

V

CE

- Volts

I

C

- Amperes

T

J

= 125ºC

R

G

= 2Ω

dV / dt < 10V / ns

Fi g . 11. Maxi mu m Tran si en t Ther mal I mp ed an ce

0.01

0.10

1.00

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

Fig. 8. Gate Charge

0

2

4

6

8

10

12

14

16

0 20 40 60 80 100 120 140 160 180 200

Q

G

- NanoCoulombs

V

GE

- Volts

V

CE

= 600V

I

C

= 50A

I

G

= 10mA

Fig. 9. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Cies

Coes

Cres

IXGH50N120C3

Fig. 12. Inductive Switching

Energ y L o s s vs. Gate Resi stance

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

23456789101112131415

R

G

- Ohms

E

off

- MilliJoules

3

4

5

6

7

8

9

10

11

12

E

on

- MilliJoules

E

off

E

on

- - - -

T

J

= 125ºC , V

GE

= 15V

V

CE

= 600V

I

C

= 80A

I

C

= 40A

Fig. 17. Inductive T urn-off

Switching T imes vs. Junction Temperature

0

50

100

150

200

250

300

350

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

-

Nanoseconds

110

120

130

140

150

160

170

180

t d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 2Ω

, V

GE

= 15V

V

CE

= 600V

I

C

= 40A

I

C

= 80A

Fig. 15. Inductive T urn-off

Switch i n g Times vs. Gate R es is tan ce

0

50

100

150

200

250

300

350

400

450

500

2 3 4 5 6 7 8 9 10 11 12 13 14 15

R

G

- Ohms

t f

- Nanoseconds

100

150

200

250

300

350

400

450

500

550

600

t d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC,

V

GE

= 15V

V

CE

= 600V

I

C

= 80A

I

C

= 40A

Fig. 13. Inductive Switching

Energ y L o s s vs. C o l lecto r C u r ren t

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

20 30 40 50 60 70 80

I

C

- Amperes

E

off

- MilliJoules

0

1

2

3

4

5

6

7

8

9

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 2

Ω ,

V

GE

= 15V

V

CE

= 600V

T

J

= 125ºC

T

J

= 25ºC

Fig. 14. Inductive Switching

Energy Loss vs. Junction Temperature

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

E

off

- MilliJoules

1

2

3

4

5

6

7

8

9

10

11

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 2Ω

,

V

GE

= 15V

V

CE

= 600V I

C

= 80A

I

C

= 40A

Fig. 16. Inductive T urn-off

Switch i n g Times vs. C o l l ecto r C u r r en t

0

50

100

150

200

250

300

350

400

450

20 30 40 50 60 70 80

I

C

- Amperes

t f

- Nanoseconds

80

100

120

140

160

180

200

220

240

260

t d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 2Ω

, V

GE

= 15V

V

CE

= 600V

T

J

= 125ºC

T

J

= 25ºC

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH50N120C3

IXYS REF: G_50N120C3(7N)6-03-08

Fig. 19. Inductive Turn-on

Switching T imes vs. Collector Current

0

10

20

30

40

50

60

70

80

90

100

110

20 30 40 50 60 70 80

I

C

- Amperes

t

r - Nanoseconds

16

17

18

19

20

21

22

23

24

25

26

27

t d(on) - Nanoseconds

t

r

t

d(on)

- - - -

R

G

= 2Ω

, V

GE

= 15V

V

CE

= 600V T

J

= 125ºC, 25ºC

Fig. 20. Inductive T urn-on

Switching Times vs. Junction Temperature

20

30

40

50

60

70

80

90

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r - Nanoseconds

19

20

21

22

23

24

25

26

t d(on) - Nanoseconds

t

r

t

d(on)

- - - -

R

G

= 2Ω

, V

GE

= 15V

V

CE

= 600V

I

C

= 40A

I

C

= 80A

Fig. 18. Inductive Turn-on

Switchi n g Ti mes vs. Gate Resistan ce

0

20

40

60

80

100

120

140

160

180

2 3 4 5 6 7 8 9 10 11 12 13 14 15

R

G

- Ohms

t r - Nanoseconds

15

20

25

30

35

40

45

50

55

60

t d(on) - Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 600V

I

C

= 40A

I

C

= 80A