STD65N55LF3 N-channel 55 V, 7.0 m, 80 A DPAK STripFETTM III Power MOSFET Features Order code VDSS RDS(on) max. ID Pw STD65N55LF3 55 V < 8.5 m 80 A 110 W Low threshold drive 100% avalanche tested 3 1 DPAK Application Switching applications Automotive Description This product is a N-channel enhancement mode Power MOSFET built with STripFETTM III technology which is especially tailored to minimized on-state resistance and gate charge, providing superior switching performance. Figure 1. Internal schematic diagram $ 4!" OR ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STD65N55LF3 65N55LF3 DPAK Tape and reel October 2010 Doc ID 16371 Rev 2 1/13 www.st.com 13 Contents STD65N55LF3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 Doc ID 16371 Rev 2 STD65N55LF3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS=0) VGS Gate-Source voltage Value Unit 55 V 20 V ID Drain current (continuous) at TC = 25 C 80 A ID Drain current (continuous) at TC = 100 C 56 A Drain current (pulsed) 320 A Total dissipation at TC = 25 C 110 W Derating factor 0.73 W/C Peak diode recovery voltage slope 11 V/ns Single pulse avalanche energy 300 mJ Operating junction temperature Storage temperature -55 to 175 C IDM (1) PTOT dv/dt (2) EAS (3) Tj Tstg 1. Pulse width limited by safe operating area 2. ISD 65 A, di/dt 300 A/s, VDD V(BR)DSS. Tj Tjmax 3. Starting Tj = 25 C, ID = 10 A, VDD = 25 V Table 3. Thermal resistance Symbol Rthj-case Rthj-pcb (1) Parameter Value Unit Thermal resistance junction-case max 1.36 C/W Thermal resistance junction-pcb max 50 C/W 1. When mounted on FR-4 board of 1inch, 2oz Cu. Doc ID 16371 Rev 2 3/13 Electrical characteristics 2 STD65N55LF3 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 4. Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown Voltage ID = 250 A, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,Tc = 125 C 10 100 A A IGSS Gate body leakage current (VDS = 0) VGS = 20 V 200 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 A 2.5 V Static drain-source on resistance VGS = 10 V, ID= 32 A 7.0 8.5 m RDS(on) VGS = 5 V, ID= 32 A 8.5 12 m V(BR)DSS Table 5. Symbol 4/13 Static 55 V 1 Dynamic Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS =0 - 2200 470 35 - pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD= 27.5 V, ID = 65 A VGS = 5 V (see Figure 16) - 20 8 8 - nC nC nC Doc ID 16371 Rev 2 STD65N55LF3 Electrical characteristics Table 6. Symbol Switching on/off (inductive load) Parameter td(on) tr Turn-on delay time Rise time td(off) tf Turn-off delay time Fall time Table 7. Test conditions VDD= 27 V, ID= 32 A, RG= 4.7 , VGS=10 V (see Figure 15) Min. Typ. Max. Unit - 10 25 - ns ns - 50 10 - ns ns Min. Typ. Max. Unit - 80 320 A A 1.5 V Source drain diode Symbol Parameter ISD ISDM Source-drain current Source-drain current (pulsed)(1) VSD Forward on voltage ISD=65 A, VGS=0 - trr Qrr Reverse recovery time Reverse recovery charge Reverse recovery current ISD=65 A, di/dt =100 A/s, VDD=30 V, Tj=150 C (see Figure 17) - IRRM Test conditions 40 60 3 ns nC A 1. Pulsed: pulse duration = 300s, duty cycle 1.5% Doc ID 16371 Rev 2 5/13 Electrical characteristics STD65N55LF3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Thermal impedance Figure 5. Transfer characteristics AM08207v1 ID (A) is Tj=175C O Li per m at ite io d ni by n m this ax a R rea Tc=25C Single pulse D S( on ) 100 Figure 3. 100s 10 1ms 10ms 1 0.1 0.1 Figure 4. 10 1 100 VDS(V) Output characteristics AM08208v1 ID (A) AM08209v1 ID (A) VGS=10V 6V 200 VDS=7V 200 5V 150 150 100 100 4V 50 0 0 Figure 6. 1 2 3 4 5 50 0 0 VDS(V) 6 Normalized BVDSS vs temperature AM08210v1 BVDSS (norm) Figure 7. 2 4 8 6 VGS(V) Static drain-source on resistance AM08211v1 RDS(on) (Ohm) VGS=10V 7.20 1.10 7.00 1.05 6.80 1.00 6.60 0.95 0.90 -75 6/13 6.40 -25 25 75 125 175 TJ(C) 6.20 0 Doc ID 16371 Rev 2 10 20 30 40 50 60 ID(A) STD65N55LF3 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM08212v1 VGS (V) VDD=27.5V 10 Capacitance variations AM08213v1 C (pF) ID=65A Ciss 1000 8 Coss 6 100 4 Crss 2 0 0 10 5 15 20 25 30 35 Figure 10. Normalized gate threshold voltage vs temperature AM08214v1 VGS(th) (norm) 10 0.1 Qg(nC) 1 VDS(V) Figure 11. Normalized on resistance vs temperature AM08215v1 RDS(on) (norm) ID=32A VGS=10V 2.0 1.2 10 1.8 1.0 1.6 0.8 1.4 0.6 1.2 0.4 1.0 0.2 0 -75 0.8 25 -25 75 125 175 TJ(C) 0.6 -75 -25 25 75 125 175 TJ(C) Figure 12. Source-drain diode forward characteristics AM08216v1 VSD (V) 0.95 TJ=-55C TJ=25C 0.85 0.75 0.65 TJ=175C 0.55 0.45 0 10 20 30 40 50 60 ISD(A) Doc ID 16371 Rev 2 7/13 Test circuits 3 STD65N55LF3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F VGS IG=CONST VDD 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100H S 3.3 F B 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 Doc ID 16371 Rev 2 10% AM01473v1 STD65N55LF3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 16371 Rev 2 9/13 Package mechanical data STD65N55LF3 TO-252 (DPAK) mechanical data DIM. mm. min. ty p ma x . A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4. 70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G 10/13 Doc ID 16371 Rev 2 STD65N55LF3 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MIN. MAX. K0 W inch MAX. 1.574 16.3 0.618 0.641 Doc ID 16371 Rev 2 11/13 Revision history 6 STD65N55LF3 Revision history Table 8. 12/13 Revision history Date Revision Changes 20-Oct-2009 1 First release. 12-Oct-2010 2 Document status promoted from preliminary data to datasheet. Doc ID 16371 Rev 2 STD65N55LF3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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