October 2010 Doc ID 16371 Rev 2 1/13
13
STD65N55LF3
N-channel 55 V, 7.0 mΩ, 80 A DPAK
STripFET™ III Power MOSFET
Features
■Low threshold drive
■100% avalanche tested
Application
■Switching applications
■Automotive
Description
This product is a N-channel enhancement mode
Power MOSFET built with STripFET™ III
technology which is especially tailored to
minimized on-state resistance and gate charge,
providing superior switching performance.
Figure 1. Internal schematic diagram
Order code VDSS
RDS(on)
max. IDPw
STD65N55LF3 55 V < 8.5 mΩ80 A 110 W
DPAK
1
3
!-V
$4!"OR
'
3
Table 1. Device summary
Order code Marking Package Packaging
STD65N55LF3 65N55LF3 DPAK Tape and reel
www.st.com
Contents STD65N55LF3
2/13 Doc ID 16371 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STD65N55LF3 Electrical ratings
Doc ID 16371 Rev 2 3/13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS=0) 55 V
VGS Gate-Source voltage ± 20 V
ID Drain current (continuous) at TC = 25 °C 80 A
ID Drain current (continuous) at TC = 100 °C 56 A
IDM (1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 320 A
PTOT Total dissipation at TC = 25 °C 110 W
Derating factor 0.73 W/°C
dv/dt (2)
2. ISD ≤ 65 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS. Tj ≤ Tjmax
Peak diode recovery voltage slope 11 V/ns
EAS (3)
3. Starting Tj = 25 °C, ID = 10 A, VDD = 25 V
Single pulse avalanche energy 300 mJ
Tj
Tstg
Operating junction temperature
Storage temperature -55 to 175 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 1.36 °C/W
Rthj-pcb (1)
1. When mounted on FR-4 board of 1inch², 2oz Cu.
Thermal resistance junction-pcb max 50 °C/W
Electrical characteristics STD65N55LF3
4/13 Doc ID 16371 Rev 2
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
Voltage ID = 250 µA, VGS= 0 55 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,Tc = 125 °C
10
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0) VGS = ± 20 V ±200 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 2.5 V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID= 32 A 7.0 8.5 mΩ
VGS = 5 V, ID= 32 A 8.5 12 mΩ
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 25 V, f=1 MHz,
VGS =0 -
2200
470
35
-
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD= 27.5 V, ID = 65 A
VGS = 5 V
(see Figure 16)
-
20
8
8
-
nC
nC
nC
STD65N55LF3 Electrical characteristics
Doc ID 16371 Rev 2 5/13
Table 6. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
Turn-on delay time
Rise time VDD= 27 V, ID= 32 A,
RG= 4.7 Ω, VGS=10 V
(see Figure 15)
-10
25 -ns
ns
td(off)
tf
Turn-off delay time
Fall time -50
10 -ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM
Source-drain current
Source-drain current (pulsed)(1)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
-80
320
A
A
VSD Forward on voltage ISD=65 A, VGS=0 - 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=65 A,
di/dt =100 A/µs,
VDD=30 V, Tj=150 °C
(see Figure 17)
-
40
60
3
ns
nC
A
Electrical characteristics STD65N55LF3
6/13 Doc ID 16371 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance
I
D
100
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
100µs
1ms
10ms
Tj=175°C
Tc=25°C
Single pulse
AM08207v1
I
D
150
100
50
002V
DS
(V)
4
(A)
135
200
5V
6V
4V
V
GS
=10V
6
AM08208v1
I
D
150
100
50
004V
GS
(V)
8
(A)
26
200
V
DS
=7V
AM08209v1
BV
DSS
-75 T
J
(°C)
(norm)
-25 75
25 125
0.90
0.95
1.00
1.05
1.10
175
AM08210v1
R
DS(on)
6.80
6.60
6.40
6.20020 I
D
(A)
(Ohm)
10 30
7.00
7.20
50
40 60
V
GS
=10V
AM08211v1
STD65N55LF3 Electrical characteristics
Doc ID 16371 Rev 2 7/13
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
V
GS
6
4
2
005Q
g
(nC)
(V)
20
8
10 15
10
V
DD
=27.5V
I
D
=65A
25 3035
AM08212v1
C
100
10
0.1 10 V
DS
(V)
(pF)
1
Ciss
Coss
Crss
1000
AM08213v1
V
GS(th)
0.6
0.4
0.2
0
-75 T
J
(°C)
(norm)
-25
0.8
125
25 75 175
1.0
1.2
AM08214v1
R
DS(on)
1.2
1.0
0.8
0.6
-75 T
J
(°C)
(norm)
-25 75
25 125 175
1.4
1.6
1.8
2.0 V
GS
=10V
I
D
=32A
AM08215v1
V
SD
020 I
SD
(A)
(V)
10 50
3040
0.45
0.55
0.65
0.75
0.85
0.95 T
J
=-55°C
T
J
=175°C
T
J
=25°C
60
AM08216v1
Test circuits STD65N55LF3
8/13 Doc ID 16371 Rev 2
3 Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test
circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.31000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
STD65N55LF3 Package mechanical data
Doc ID 16371 Rev 2 9/13
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Package mechanical data STD65N55LF3
10/13 Doc ID 16371 Rev 2
DIM. mm.
.xampyt.nim
04.202.2A
01.109.01A
32.030.02A
09.046.0b
04.502.54b
06.054.0c
06.084.02c
02.600.6D
01.51D
06.604
.6E
07.41E
82.2e
06.404.41e
01.0153.9H
1L
08.21L
08.02L
106.04L
02.0R
V2 0 o8 o
TO-252 (DPAK) mechanical data
0068772_G
STD65N55LF3 Packaging mechanical data
Doc ID 16371 Rev 2 11/13
5 Packaging mechanical data
TAPE AND REEL SHIPMENT
DPAK FOOTPRINT
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B1.5 0.059
C 12.8 13.2 0.504 0.520
D20.2 0.795
G 16.4 18.4 0.645 0.724
N50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D1.5 1.6 0.059 0.063
D1 1.5 0.059
E1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions are in millimeters
Revision history STD65N55LF3
12/13 Doc ID 16371 Rev 2
6 Revision history
Table 8. Revision history
Date Revision Changes
20-Oct-2009 1 First release.
12-Oct-2010 2 Document status promoted from preliminary data to datasheet.
STD65N55LF3
Doc ID 16371 Rev 2 13/13
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