AP9971GS/P RoHS-compliant Product Advanced Power Electronics Corp. Low On-resistance N-CHANNEL ENHANCEMENT MODE POWER MOSFET D Single Drive Requirement BVDSS 60V RDS(ON) 36m ID Surface Mount Package 25A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-263(S) The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9971GP) are available for low-profile applications. G Absolute Maximum Ratings Symbol Parameter D TO-220(P) S Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current, VGS @ 10V 25 A ID@TC=100 Continuous Drain Current, VGS @ 10V 16 A 1 IDM Pulsed Drain Current 80 A PD@TC=25 Total Power Dissipation 39 W Linear Derating Factor 0.31 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.2 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 /W Data and specifications subject to change without notice 1 200811173 AP9971GS/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 60 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.05 - V/ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=18A - - 36 m VGS=4.5V, ID=12A - - 50 m VGS=0V, ID=250uA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=18A - 17 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (T j=150 C) VDS=48V ,VGS=0V - - 25 uA Gate-Source Leakage VGS=+20V - - +100 nA ID=18A - 18 30 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 6 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 11 - nC VDS=30V - 9 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=18A - 24 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 26 - ns tf Fall Time RD=1.67 - 7 - ns Ciss Input Capacitance VGS=0V - 1700 2700 pF Coss Output Capacitance VDS=25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF Min. Typ. IS=25A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=18A, VGS=0V, - 37 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 38 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9971GS/P 100 70 o T C =25 C 60 10V 7.0V 50 5.0V o T C =150 C 10V 7.0V ID , Drain Current (A) ID , Drain Current (A) 80 5.0V 60 4.5V 40 4.5V 40 30 20 V G =3.0V 20 V G =3.0V 10 0 0 0 1 2 3 4 5 0 1 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 3 4 5 6 Fig 2. Typical Output Characteristics 40 2.5 I D =18A V G =10V I D = 18 A T C =25 o C 2.0 Normalized RDS(ON) RDS(ON) (m) 2 V DS , Drain-to-Source Voltage (V) 35 30 1.5 1.0 0.5 trr 0.31 25 0.0 3 5 7 9 11 -50 V GS , Gate-to-Source Voltage (V) 50 100 o Qrr 150 T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 20 2.6 16 2.2 VGS(th) (V) T j =25 o C o T j =150 C 0 IS(A) 12 1.8 8 1.4 4 1 0.6 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9971GS/P f=1.0MHz 14 10000 I D =18A V DS =30V V DS =38V V DS =48V 10 C iss 1000 8 C (pF) VGS , Gate to Source Voltage (V) 12 6 C oss C rss 100 4 2 0 10 0 10 20 30 40 1 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10us Normalized Thermal Response (Rthjc) Duty factor=0.5 100us 10 ID (A) 1ms 10ms 100ms 1 DC T C =25 o C Single Pulse 0.2 0.1 0.1 0.05 PDM T 0.01 0.1 1 10 100 1000 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse trr 0.31 0.01 0.1 t 0.02 0.00001 0.0001 0.001 0.01 0.1 Qrr 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 E E3 SYMBOLS E1 E2 D2 D1 D b1 L2 L3 e MIN NOM MAX A 4.25 4.75 5.20 A1 0.00 0.15 0.30 A2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 c1 1.15 1.30 1.45 D 8.30 8.90 9.40 D1 5.10(ref) D2 1.27(ref) E b L4 E2 6.40(ref) E3 8.00(ref) 2.04 2.54 L1 2.54(ref) L2 1.50 4.50 L4 c c1 c1 10.10 7.40(ref) L3 A2 9.70 E1 e A A Millimeters 4.90 10.50 3.04 5.30 1.50 0 ----- 5 1.All Dimensions Are in Millimeters. A1 A1 2.Dimension Does Not Include Mold Protrusions. L1 Part Marking Information & Packing : TO-263 Part Number Package Code 9971GS YWWSSS LOGO meet Rohs requirement for low voltage MOSFET only Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 A E Millimeters SYMBOLS L2 L5 c1 D L4 b1 L3 MIN NOM MAX A 4.25 4.48 4.70 b b1 c c1 0.65 0.80 0.90 1.15 1.38 1.60 0.40 0.50 0.60 1.00 1.20 1.40 E 9.70 10.00 10.40 E1 --- --- 11.50 e ---- 2.54 ---- L 12.70 13.60 14.50 L1 2.60 2.80 3.00 L2 1.00 1.40 1.80 L3 2.60 3.10 3.60 L4 14.70 15.50 16.00 L1 L c b L5 6.30 6.50 6.70 3.50 3.70 3.90 D 8.40 8.90 9.40 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-220 Part Number Package Code meet Rohs requirement for low voltage MOSFET only 9971GP LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 6