Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-resistance BVDSS 60V
▼ Single Drive Requirement RDS(ON) 36mΩ
▼ Surface Mount Package ID25A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 3.2 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.31
Pulsed Drain Current180
Total Power Dissipation 39
Continuous Drain Current, VGS @ 10V 25
Continuous Drain Current, VGS @ 10V 16
Drain-Source Voltage 60
Gate-Source Voltage +20
Parameter Rating
200811173
RoHS-compliant Product
1
AP9971GS/P
-55 to 150
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9971GP) are
available for low-profile applications.
GDSTO-263(S)
GDSTO-220(P)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.05 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=18A - - 36 mΩ
VGS=4.5V, ID=12A - - 50 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=18A - 17 - S
IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=150oC) VDS=48V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=+20V - - +100 nA
QgTotal Gate Charge2ID=18A - 18 30 nC
Qgs Gate-Source Charge VDS=48V - 6 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 11 - nC
td(on) Turn-on Delay Time2VDS=30V - 9 - ns
trRise Time ID=18A - 24 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 26 - ns
tfFall Time RD=1.67Ω-7-
ns
Ciss Input Capacitance VGS=0V - 1700 2700 pF
Coss Output Capacitance VDS=25V - 160 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=25A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=18A, VGS=0V, - 37 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 38 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9971GS/P
AP9971GS/P
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
0.31 trr
Qrr
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
25
30
35
40
357911
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=18A
TC=25oC
0
20
40
60
80
100
012345
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
VG=3.0V
TC=25oC10V
7.0V
5.0V
4.5V
0
10
20
30
40
50
60
70
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC
VG=3.0V
10V
7.0V
5.0V
4.5V
0.0
0.5
1.0
1.5
2.0
2.5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
VG=10V
ID=18A
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=150oC
0.6
1
1.4
1.8
2.2
2.6
-50 0 50 100 150
Tj ,Junction Temperature ( oC)
VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
0.31 trr
Qrr
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
AP9971GS/P
10
100
1000
10000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Crss
Coss
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.0
2
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
TC=25oC
Single Pulse
10us
100us
1ms
10ms
100ms
DC
0
2
4
6
8
10
12
14
0 10203040
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =30V
VDS =38V
VDS =48V
I
D=18A
Package Outline : TO-263
Millimeters
MIN NOM MAX
A 4.25 4.75 5.20
A1 0.00 0.15 0.30
A2 2.20 2.45 2.70
b 0.70 0.90 1.10
b1 1.07 1.27 1.47
c 0.30 0.45 0.60
c1 1.15 1.30 1.45
D 8.30 8.90 9.40
D1
D2
E 9.70 10.10 10.50
E1
E2
E3
e 2.04 2.54 3.04
L1
L2
L3 4.50 4.90 5.30
L4
θ0° ----- 5°
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-263
ADVANCED POWER ELECTRONICS CORP.
SYMBOLS
5.10(ref)
1.27(ref)
7.40(ref)
6.40(ref)
8.00(ref)
2.54(ref)
1.50
1.50
Part Number
b
b1
e
L2
L3
c1
A
θ
A1
L4
c
YWWSSS LOGO
A2
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
Package Code
9971GS
E
D
L3
c1
A
θ
A1 c
D1
E1
meet Rohs requirement
for low voltage MOSFET only
E2
E3
L1
D2
5
Package Outline : TO-220
Millimeters
MIN NOM MAX
A 4.25 4.48 4.70
b0.65 0.80 0.90
b1 1.15 1.38 1.60
c0.40 0.50 0.60
c1 1.00 1.20 1.40
E 9.70 10.00 10.40
E1 --- --- 11.50
e---- 2.54 ----
L 12.70 13.60 14.50
L1 2.60 2.80 3.00
L2 1.00 1.40 1.80
L3 2.60 3.10 3.60
L4 14.70 15.50 16.00
L5 6.30 6.50 6.70
φ3.50 3.70 3.90
D 8.40 8.90 9.40
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-220
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
E
b
b1
e
D
L3
L4
L1
L2
A
c1
c
L
Package Code
Part Number
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
9971GP
YWWSSS
LOGO
φ
L5
meet Rohs requirement
for low voltage MOSFET only
E1
6
