
NPN SILICON PLASTIC POWER TRANSISTOR
Designed for High Voltage, High Speed Power Switching Inductive Circuits Applications
Collector Emitter Voltage V
V
Collector Emitter Voltage V
V
Emitter Base Voltage V
V
Collector Current Continuous ICA
Peak *ICM A
Base Current Continuous IBA
Peak *IBM A
Emitter Current Continuous IEA
Peak *IEM A
Total Power Dissipation at Ta=25ºC **PDW
Derate Above 25ºC W/ºC
Total Power Dissipation at T
=25ºC P
W
Operating and Storage Junction
Tj, Tstg ºC
Junction to Case Rth (j-c) ºC/W
Junction to Ambient in free air **Rth (j-a) ºC/W
Maximum Lead Temperature for
Soldering Purposes TL ºC
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector Emitter Voltage VCEO IC=1mA, IB=0 400 V
Collector Cut Off Current ICEV VCEV=Rated Value, VBE (off)=1.5V 0.1 mA
VCEV=Rated Value, VBE (off)=1.5V, Tc=100ºC 2.0 mA
Emitter Cut Off Current IEBO VEB=9V, IC=0 1.0 mA
DC Current Gain
8.0 40
I
=1A, V
=2V 5.0 25
***Pulse Test:- Pulse Width < 300µµs, Duty Cycle < 2%
** When Surface Mounted on Minimum Pad Sizes Recommended
*Pulse Test:- Pulse Width=5ms, Duty Cycle < 10%
- 65 to +150
1.56
0.0125
8.33
0.12
1.5
2.25
4.5
260
700
15
1.5
9.0
400
3.0
0.75
80
Continental Device India Limited Data Sheet Page 1 of 5
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company