Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistor
Driver Applications
Ordering number:ENN2158A
2SB1229/2SD1835
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1003TN (KT)/92098HA (KT)/4107KI/0296AT, TS No.2158–1/5
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 06)–(V
egatloVrettimE-ot-rotcelloCV
OEC 05)–(V
egatloVesaB-ot-rettimEV
OBE 6)–(V
tnerruCrotcelloCI
C2)–(A
)esluP(tnerruCrotcelloCI
PC 3)–(A
noitapissiDrotcelloCP
C57.0W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
( ) : 2SB1229
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2003B
[2SB1229/2SD1835]
Applications
· Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Features
· Adoption of FBET, MBIT processes.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· Fast switching time.
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V05)–(= E0=001)–(An
tnerruCffotuCrettimEI
OBE VBE I,V4)–(= C0=001)–(An
niaGtnerruCCD hEF 1V
EC I,V2)–(= CAm001)–(=*001*065
hEF 2V
EC I,V2)–(= CA5.1)–(=04
tcudorPhtdiwdnaB-niaGf
TVEC I,V01)–(= CAm05)–(=051zHM
ecnaticapaCtuptuOC
bo VBC zHM1=f,V01)–(=)22(21Fp
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,A1)–(= BAm05)–(= 51.04.0V
)3.0–()7.0–(V
5.0
4.0
0.5
0.6
2.0
14.0 5.0
0.45
0.45
4.0
0.44
1.3
1.3
123
Continued on next page.
2SB1229/2SD1835
No.2158–2/5
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB ICI,A1)–(= BAm05)–(=9.0)–(2.1)–(V
egatloVnwodkaerBesaB-ot-rotcelloCV
OBC)RB( ICI,Aµ01)–(= E0=06)–(V
egatloVnwodkaerBrettimE-ot-rotcelloCV
OEC)RB( ICR,Am1)–(= EB =∞05)–(V
egatloVnwodkaerBesaB-ot-rettimEV
OBE)RB( IEI,Aµ01)–(= C0=6)–(V
emITNO-nruTt
no tiucriCtseTdeificepseeS)06(06sn
emiTegarotSt
gts tiucriCtseTdeificepseeS 055sn
)054(sn
emiTllaFt
ftiucriCtseTdeificepseeS 03sn
03sn
Switching Time Test Circuit
* : The 2SB1229/2SD1835 are classified by 100mA hFE as follows :
knaRRSTU
hEF 002ot001082ot041004ot002065ot082
Continued from preceding page.
VRRB
VCC
VBE= --5V
++
50Ω
INPUT
OUTPUT
RL
100µF 470µF
IB1
IB2
IC=10IB1= --10IB2=500mA, VCC=25V
(For PNP, the polarity is reversed.)
ITR09360
IC -- VCE
0 --0.4 --0.8 --1.2 --1.6 --2.0 --2.4
0
--0.4
--0.8
--1.2
--1.6
--2.0
--2.4
IB=0
--
20mA
ITR09361
IC -- VCE
0 0.4 0.8 1.2 1.6 2.0 2.4
0
0.4
0.8
1.2
1.6
2.0
2.4
IB=0
2SB1229
50mA
25mA
40mA
2SD1835
15mA
8mA
ITR09362
IC -- VCE
0--4--2 --6 --8 --10 --12
0
--200
--400
--600
--800
--1000
--1200
IB=0
--
7mA
--
6mA
--5mA
--4mA
--3mA
--2mA
--1mA
ITR09363
IC -- VCE
042861210
0
200
400
600
800
1000
1200
IB=0
2SB1229
7mA
5mA
4mA
3mA
2mA
1mA
6mA
2SD1835
--
50mA
--
10mA
--
8mA
--6mA
--4mA
--2mA
4mA
2mA
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
2SB1229/2SD1835
No.2158–3/5
ITR09366
hFE -- IC
--0.01 323 57 7
--0.1 --1.0
572
3
2
7
100
1000
5
3
2
7
5
3
2
ITR09367
hFE -- IC
0.01 323 5 0.1 1.0
5777232
7
100
1000
5
3
2
7
5
3
2
2SB1229
VCE= --2V 2SD1835
VCE=2V
2SD1835
VCE=10V
--
1.0
--
10 223 357
--
100
57
10
7
100
5
7
5
3
2
2
ITR09370
Cob -- VCB
1.0 10 223 357 100
57
10
7
100
5
7
5
3
2
ITR09371
Cob -- VCB
ITR09364
IC -- VBE
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
0
--0.8
--0.4
--1.2
--2.4
--2.0
--1.6
2SB1229
VCE= --2V
ITR09365
IC -- VBE
0 0.2 0.4 0.6 0.8 1.0 1.2
0
0.4
0.8
1.2
1.6
2.0
2.4
2SD1835
VCE=2V
Ta=75
°C
25
°C
--25
°C
Ta=75
°C
25
°C
--25°C
3
--10 7--100
5237
--1000
5232
7
100
5
2
10
2
3
7
1000
5
3
fT -- IC2SB1229
VCE=10V
2SB1229
f=1MHz 2SD1835
f=1MHz
ITR09368
3
10 7100
5237
1000
5232
7
100
5
2
10
2
3
7
1000
5
3
fT -- IC
ITR09369
Ta=75°C
25
°C
--25°C
Ta=75°C
25°C
--25°C
Collector Current, IC–A
Base-to-Emitter Voltage, VBE –V
Collector Current, IC–A
Base-to-Emitter Voltage, VBE –V
DC Current Gain, hFE
Collector Current, IC–A
DC Current Gain, hFE
Collector Current, IC–A
3
Collector Current, IC–mA
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–mA
Gain-Bandwidth Product, fT– MHz
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
2SB1229/2SD1835
No.2158–4/5
0 20 40 60 80 100 120 140 160
0
200
400
800
750
1000
600
PC -- Ta
ITR09377
2SB1229 / 2SD1835
ITR09372
VCE(sat) -- IC
5777
--0.1 2
--0.01 2335
--1.0 23
--10
--100
5
7
7
3
--1000
5
3
2
2
5
3
2
ITR09375
VBE(sat) -- IC
577 7
0.1 2
0.01 23 5 1.0
323
1.0
5
7
7
3
2
10
5
3
ITR09373
VCE(sat) -- IC
50.1 2
0.01 2335777 1.0 23
100
1000
5
3
5
3
3
5
7
7
2
10
2
2
ITR09374
VBE(sat) -- IC
577 7
--0.1 2
--0.01 23 5 --1.0
323
--1.0
5
7
3
2
--10
5
7
3
ITR09376
A S O
1.0
3
5
5
5
7
7
7
2
2
3
22
33 55777 3
510 100
0.1
5
3
2
1.0
0.01
2SB1229
IC / IB=20 2SD1835
IC / IB=20
2SD1835
IC / IB=20
10ms
1ms
ICP=3A
IC=2A
DC operation
100ms
2SB1229 / 2SD1835
Ta=75°C
25
°C
--25
°C
2SB1229
IC / IB=20
Ta=
--25°C
25
°C
75°C
Ta=
--25°C
25°C
75°C
Ta=75
°C
25°C
--25
°C
Ta=25°C
Single pulse
(For PNP, minus sign is omitted.)
Collector-to-Emitter
Saturation Voltage, VCE(sat) – mV
Collector Current, IC– A Collector Current, IC–A
Collector-to-Emitter
Saturation Voltage, VCE(sat) – mV
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Collector Current, IC–A
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector Dissipation, PC–mW
Ambient Temperature, Ta – ˚C
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2003. Specifications and information herein are subject
to change without notice.
2SB1229/2SD1835
PS No.2158–5/5
