© Semiconductor Components Industries, LLC, 2019
September, 2019 − Rev. 4
1Publication Order Number:
FFSP3065B−F085/D
FFSP3065B-F085
Silicon Carbide Schottky
Diode
650 V, 30 A
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
•Max Junction Temperature 175°C
•Avalanche Rated 144 mJ
•High Surge Current Capacity
•Positive Temperature Coefficient
•Ease of Paralleling
•No Reverse Recovery / No Forward Recovery
•AEC−Q101 Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•Automotive HEV−EV Onboard Chargers
•Automotive HEV−EV DC−DC Converters
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, Unless otherwise specified)
Symbol Parameter
FF-
SP3065B−F085 Unit
VRRM Peak Repetitive Reverse Voltage 650 V
EAS Single Pulse Avalanche Energy (Note 1) 144 mJ
Continuous Rectified Forward Current
@ TC < 135°C
30
IF, Max Non−Repetitive
Peak Forward
Surge Current
TC = 25°C, 10 ms1100 A
TC = 150°C, 10 ms1000
IF, SM Non−Repetitive
Forward
Surge Current
Half−Sine Pulse,
tp = 8.3 ms
110 A
Ptot Power Dissipation TC = 25°C 197 W
TC = 150°C 33
TJ, TSTG Operating and Storage Temperature
Range
−55 to +175 °C
1. EAS of 144 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 24 A, V = 50 V.
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MARKING DIAGRAM
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
TO−220−2LD
CASE 340BB
ELECTRICAL CONNECTION
$Y&Z&3&K
FFSP
3065B
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FFSP3065B−F085 = Specific Device Code
1. Cathode 2. Anode
12
FFSP3065B−F085
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THERMAL CHARACTERISTICS
Symbol Parameter Ratings Unit
RθJC Thermal Resistance, Junction to Case, Max. 0.76 °C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FFSP3065B−F085 FFSP3065B TO220 Tube N/A N/A 50 Units
ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VFForward Voltage IF = 30 A, TC = 25°C−1.38 1.7 V
IF = 30 A, TC = 125°C−1.6 2.0
IF = 30 A, TC = 175°C−1.72 2.4
IRReverse Current VR = 650 V, TC = 25°C−0.5 40 mA
VR = 650 V, TC = 125°C−1.0 80
VR = 650 V, TC = 175°C−2.0 160
QCTotal Capacitive Charge V = 400 V −74 −nC
CTotal Capacitance VR = 1 V, f = 100 kHz −1280 −pF
VR = 200 V, f = 100 kHz −139 −
VR = 400 V, f = 100 kHz −108 −
FFSP3065B−F085
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3
TYPICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Current Derating Figure 4. Power Dissipation
Figure 5. Capacitance Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
VF
, FORWARD VOLTAGE (V)
IF
, FORWARD CURRENT (A)
TC, CASE TEMPERATURE (5C)
VR, REVERSE VOLTAGE (V)
QC, CAPACITANCE CHARGE (nC)
IR, REVERSE CURRENT (A)
IF
, PEAK FORWARD CURRENT (A)
CAPACITANCE (pF)
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (5C)
PTOT
, POWER DISSIPATION (W)
0.0
0
20
40
60
100
10−9
10−8
10−7
10−6
25 50 75 100 125 150 175
0
50
25 50 75 100 125 150 175
0
50
0 100 200 300 400 500 600 650
0
30
60
90
120
0.1 1 10 100 650
50
100
1000
VR, REVERSE VOLTAGE (V)
200 300 400 500 600 650
100
0.5 1.0 1.5 2.0 2.5 3.0
150
200
250
100
150
200
250
5000
TJ = 175°C
TJ = 125°C
TJ = −55°C
TJ = 75°C
TJ = 25°C
TJ = 175°C
TJ = 125°C
TJ = −55°C
TJ = 75°C
TJ = 25°C
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7 D = 1
FFSP3065B−F085
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4
TYPICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted (continued)
Figure 7. Capacitance Stored Energy
VR, REVERSE VOLTAGE (V)
EC, CAPACITIVE ENERGY (mJ)
10−610−510−410−310−210−11
0.001
0.01
0.1
1
2
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction−to−Case Transient Thermal Response Curve
0 100 200 300 400 500 600 650
0
10
20
30
DUTY CYCLE−DESCENDING ORDER
SINGLE PULSE
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.5
TEST CIRCUIT AND WAVEFORMS
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
L = 0.5 mH
FFSP3065B−F085
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5
PACKAGE DIMENSIONS
TO−220−2LD
CASE 340BB
ISSUE O
5°
3°
5°
3°
4.80
4.30
10.67
9.65
4.09
3.50
3.43
2.54
9.40
8.38
2.54
5.08
16.51
14.22
14.73
13.60
1.02
0.38
6.35 MAX
1.65
1.25
1.91
0.36 MBAM
0.36 MCAB
A
C
1.40
0.51
7°
3°
6.86
5.84
2.92
2.03
0.61
0.33
5°
3°
5°
3°
B
13.40
12.19
8.89
6.86
0.60 MAX
16.15
15.75
NOTES:
A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,
VARIATION AC,DATED APRIL 2002.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
1 2
FFSP3065B−F085
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FFSP3065B−F085/D
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