~ 313 DG189,190,191 SPDT JFET FFOD* 24 vy F(FATIWL) Siliconix Fa7U SPDT (HRN) FET PEORHT +E - 24 VF CBRL Y BRAK FILEN EMMI ev y ZAHN O8BVELUZOV) ib OMMAHS. Vi-V- : 36V ALYFIUFEAD ETAT AATEC, AFIT RCBA ATI YT RE tk 20Vp_p CHS. +> ttt DG189 43 150, DG190 43502, DG191 48 1002 C7 PaPFAT IS SMR CHEE -ECREN TW S. V+-Vp : 33V GE i - oe F DTD Vp-V- : 33V GR-F D- & BURR) Vp-Vs : +35V Gat D-S fH) Vi- Vo: 8V Oe Vi- A URI) Vi- Vin : 8V Gti Vi- AD fal) Vi-Vp: 8V Om Vi- Ve Fe) Orta Ais a Ct VE OZ anzbh-7 TTL/CMOS 2v nF FR (RY FAH Vin- Ve: 8V (A D-H Ve FED ORYFA-D WEY FL YI FAY b RYH Va-V~ : 27V ii Ve- AT) Wey #FivI DIL 7S Vr-Vin : 8V Oni Ver- A HR) Tp: 30mA GRE D,S &BR<) Is, Ip : 200mMA (DG189) Is, Ip : 30mA (DG190, DG191) Pp*! : 900mW (4% 3 = 7 DIL) g00mW (Ce FRY 7 - 77YR) Ko*! : 12mMW/C Ce FS v 7 DIL) DF? -1lomW Cle FR 7 FRY bh) Topp | B5~4+125C (AGT 4 77 A) 7Fo+7H 8} 9-0-7, a4 -_0 0) $3 O 7 A 03 \ t Dual-in-Line Package Two SPOT Switches per Package SPER RRA AL F) ve 82 O-_o-7 4-0 Dp 25~+85C (BY 7497 %) 0 XX arate! Tig 2 ~65~ +150C S4 | 4 ____ 04 I "Common to Substrate - _ t and Base of Package KL: SYK KEV YS be RRMICRA ELE ES IN2 of > #2: T,275C A449 F > TRAE Truth Table sv nv sw swa swiTcH , vy, . ec LoGic | owal| sw R ie suite Ss o Savor 0 | OFF | ON tanvgeay | Of eo PEF Vo Lt [oe | ore neon EES Logic a < 0.8 V IN my I asta Locie wot SF 3b oF Logie 1" > 24V s secre HH | aL 4 a > Switches Shown for Logic 1 Input Yorsacrigen, a ee REPEAL TEST OR oe aay }4---f cooie = sw om | 4,4 oor tawut om NOTE: LOOG INPUT WAVES OHM ae a neven eo ran terres rio weet on er Toate sense CONTROL srr I oi i L smten i t oureut i314- DG189,190,191 SPDT JFET THOF* 24 F(FaTIL) (D3) Siliconix ; gt (Vt=15V, V-=15V, Vi=5V, Ve=0, Ta=25C) 7 - HE RRETE (DG189) BSR z 3 as ae RM DG189A DG189B wt al a a we F y 3 Vo= nine Bo |e ee KR ee eK | a rane z Vanazoc | (Fit REE -75 1s |-75 io |v. 5 Is=1mA, Vp=7.5V T,=25C 75 | 10 15 t 3 rps.oN: o = SON | Viy=0.8 or 2.0V OREM 20 25 s oe t 4 Vs=10V, Vp= 10V 9 _ Ss ' D ; Vin=0.8V or 2.0V tv," =20V 0.05 | 10 15 z T,=25C Vp=~7.5V, Vs=7.5V 0.05 | 10 15 3 Toorr. Vs=10V, Vp=10V nA = s= > p= t : Viv=0.8V or 2.0V Ye =10V, Y= _20V 1000 300 gu aE 3 28 135 S(raE oe Vo= ~7.5V, Vs=7.5V 1000 300 T - TEMPERATURE (C Viv=0.8V or 2.0 0.04 | 10 15 At y FL TM Vo, REET (0G189) 1 T.=25C 0.03 | 10 | os HOFF) n | _ Vs=10V, Vp= | | Vin=0.8V or 2.0V Vv =10V, 20 1000 300 were Siri aH Vp=~7.5V, Vs=7.5V : 1000 300 Vin=0.8V or 2.0V T,= 25C -2 ;-0.1 10 Ips.ony y 2 7. nA i Vp= Vs=7.5V / Sri we 200! 200 z Insat |t=2ms 300 | 300 mA ! T : qi Vin=5V <0.01; 10 10 HT =95% wy BA In. Vin=0V ~250 | 30 250 Tus J Viv=5V 20 20 ORS HA ~55 -95 -15 25 @5 65 85 105 128 In Vin=0V 250 250 T - 1EMPERATURE (C) bow 240 300 300 MERI ka ns tuy 140 | 250 300 V7 2 Bt RE (DG189) Cswore Vs= ~8V, fo=0 21 21 Bae oe Coorr, [f= 1MHz Vp=5V, Is=0 17 17 pF ory Cosco Vo= Vs=0V _ 17 Ww ; face th %& | WM & OIR [R,=750, f= 1MHz 1 355 >55 dB Siliconix DG189 qt 0.6 15 06 15 g Intersil | DG189 T 5 t-27 5 | 27 & Viv=OV(2AA) ~ mA 3 a ; 31 | 45 31 | 45 3 Tr -2 | -09 -2 )-09 3 r o6 | 15 06 | 15 I 5 | -27 -5 | -2.7 0. Vin=5V( BAH) mA ry 5 65 i, 3.0 4.5 3.0 45 T= TEMPERATURE (C) Ip 2 1-10 2 | -1.0DG189,190,191 3I5s SPDT JFET VFODV+*24 vv F (Fa TIL) (73H) Siliconix . Meas (V' =15V, V- =15V, V,=5V, Ve=0, T,=25C) 7 > HE ai BE Rt (OG 190) r DG190A DG190B 3 moe mot & tt - ; My 00 - se * Be ohime @) e kl mle wR Xx 6 Wg > Va MAXI | | { 3 sma | Vanacoe |b Fi NERO =75! 1 |-75 i | Vv 5 Is=1mA, Vp=7.5V' Te = 25C 18 | 30 50 2 Yps-ON - | 9 z Vin=0.8 or 2.0V Bh fF ik Ea 60 75 2 g 5 co _ Vs=10V, V)=10V : Viv=0.8V or 2.0V V' =10V, ) =20V 0.06 | 1 5 2 : fae Vp=7.8V, Vs=7.8V 0.1 1 5 3 | sore Vs=10V, Vp=~10V nA a ! = s= p= } ; Viy=0.8V or 2.0V = 10V, 7 =~ 20V 100 | 100 i Acie Bas os son [earrie SPR Vp= 7.5V, Vs=7.5V "100 "100 T - TEMPERATURE (C) Vs=10V, Vo=10V : Viw=0.8V 0r2.0V i ys any y =_90y 05 1 5 . a Ty =25C = _ ~ RA -y F > TUSP-Vp, THREMtE (DG190) be Vp=7.5V, Vy=7.5V 06 | 1 5 toy OFF ~ 120 7 Vs=10V, Vp=10V Vin =0.8V or 2.0V Y' =10V, V =20V 100 100 oy ca ea na SE AP Vp= ~7.5V, Vs=7.5V 100 100 Viv=0.8V or 2.0V T,=25C 2 |-0.02! 10 = 10 Zpsions | ; : nA = Vip=Vs=7.5V 8) (ELIE BDA = 200 | 200 = 7 7 - . z I Vin=5V 10 10 7 90 mo |p aesrc ~ an LA . In, Viv=0V 250 | 30 250 70 LL __| Tn Viv=5V 20 20 L By Pe tha Me LH aN In ee Viy=OV 250 250 x 50 - ~ -$6 -35 -15 5 25 45 65 BS 105 125 Loy to . 85 150 180 1 TEMPERATURE ("CI [ by j PIES LS 95 130 150 ns | Cs.ore Vs=BV, fy=0 9 9 focorr) ~BEIFTE (DG 190) Cuore. |f=1MH2 i p=5V, 1s=0 6 6 pF a | Coorr | {00 Yor lv Vo = 200 Bann Cosion: Vp= Vs=0V 14 14 ry . =8V. Vg 20 ~ - ~~ SED Ager TE vo StowNg- wv ae | @ %, OR |R,=750,f=1MHz >50 >50 dB 2 Siliconix | DGiso || 7+ | 06 | 15 0.6 | 15 3 Intersil | DG190 Fly cove any | 5.0 | -2.7 5.0 | 2.7 mA i, ; 31 1 45 31 | 45 Z Ty ~2.0 | 1.0 2.0 | -1.0 =! mG 0.6 1.5 0.6 1.5 3 ! 5.0' -2.7 5.0' ~2.7 on -- Sp VBA fo . mA "28 6 6 105128 fi, ; 3 4.5 | 3.1 4.5 T TEMPERATURE (C) | Ty | 2.0 : 1.0 2.0 .0 316 DG189,190,191 SPDT JFET FPFODP* 24 vy F (FAT) (D3) Siliconix meanest (V =15V, V- =15V, VL=5V, Ve=0, Ta =25C) + > de RES (DG191) : / DG191A DGi91B 5 swe a eo near gle * [exe le mia x|" 3 ips =10mA Vananoo | 80F HOEE =10 15 | 10 15 | V z Ig=1mA, Vp=7.5V T,=28C 35 | 75 100 | 3 7Os0n ly, -o.8or2.0V | _sSATFIRAE SEES 150 150 z : 100 Viv=0-8V 0r2.0 Pct. foo bv 0.05 | 1 8 a T= 25C Vp=7.V, Vg=7.5V 0.07 | 1 i 5 Fi Jscorr Vs=10V, Vp=10V nA 5 Viw=0.8V 0r2.0V | 8 gy y= a0v 100 100 3 10 Sr ao Vp=7.5V, V5=7.5V 100 100 | 1 = TEMPERATURE (C) Vi==0.8V or 2.0V yoy. ay 0.04 | 1 5 AA vF > OR Vo, AEE (DG191) , T,=25C Vpu_78V, Vou7.5V 0.05 | 1 5 | oa DiOFF: 7 Vin=0.8V or 2.00 Pov e ty 100 100 . | SPE ia Vp= 7.5V, Vs=7.5V 100 _ | 100 = 00 Ipmom Vm OBY OF 2.00 T,=25C =2 = 0.03 10 aA SON i yy= Vs=7.5V arreeme | 200: 200 tO tn oe Viv=5V | 40 | ua In a Viv=0V 250' 35 250 Tin sat ee ate Vin=5V 20 | 20 so - Tn (i FE RB Viy=0V S50 950 bo TWA oes nas 18 5 73 45 05 8S 105 12S be ry . | - : 120-250 : : 300 T TEMPERATURE {C} by WIE LBS S mot too 30 | ico ns | Cs.orr Ve=5V, 1)=0 9 9 locore) SmBETFTE (DG191) SRE _ Coorr | 'f=1MHz 3 6 | 6 pF ooo a_i Cps.ox Vp= Vs=0V 4 | 14 i ver etow Ng = tov wu @ [ % | om R,=750, f-1MHe >50 | >50 dB # Siliconix | DG191 | 72> oe fs 3 Intersil DG191 I- i 5 5 AV y= OV RAP mA $ TI Tlisk | ok 45 i 45 | g i 8 _ L I LS 15 ; EF tgs = =} on ZL Viy=SV(@AA as : ib mA J TEMPERATURE (C) Ip . -2 -2