UBA2032TS/N3,118 - NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 2003 Oct 24 2005 Mar 24

INTEGRATED CIRCUITS

UBA2032

Full bridge driver IC

2005 Mar 24 2

Philips Semiconductors Product speciﬁcation

Full bridge driver IC UBA2032

FEATURES

•Full bridge driver circuit

•Integrated bootstrap diodes

•Integrated high voltage level shift function

•High voltage input for the internal supply voltage

•550 V maximum bridge voltage

•Bridge disable function

•Input for start-up delay

•Adjustable oscillator frequency

•Predefined bridge position during start-up

•Adaptive non-overlap.

APPLICATIONS

•The UBA2032 can drive (via the MOSFETs) any kind of

load in a full bridge configuration

•The circuit is especially designed as a commutator for

High Intensity Discharge (HID) lamps.

GENERAL DESCRIPTION

The UBA2032 is a high voltage monolithic integrated

circuit made in the EZ-HV SOI process. The circuit is

designed for driving the MOSFETs in a full bridge

configuration. In addition, it features a disable function, an

internal adjustable oscillator and an external drive function

with a high-voltage level shifter for driving the bridge.

To guarantee an accurate 50% duty factor, the oscillator

signal can be passed through a divider before being fed to

the output drivers.

ORDERING INFORMATION

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

UBA2032T SO24 plastic small outline package; 24 leads; body width 7.5 mm SOT137-1

UBA2032TS SSOP28 plastic shrink small outline package; 28 leads; body width 5.3 mm SOT341-1

2005 Mar 24 3

Philips Semiconductors Product speciﬁcation

Full bridge driver IC UBA2032

BLOCK DIAGRAM

handbook, full pagewidth

MGU542

LOW VOLTAGE

LEVEL SHIFTER

OSCILLATOR

STABILIZER

UVLO

SGND

VDD

HIGH VOLTAGE

LEVEL SHIFTER

HIGHER LEFT

DRIVER

LOWER RIGHT

DRIVER

LOWER LEFT

DRIVER

HIGHER RIGHT

DRIVER

LOGIC SIGNAL

GENERATOR

LOGIC

11 (13)

8 (10)

10 (12)

9 (11)

1.29 V

2 (2)1 (1) 3 (3)

EXTDR−LVS +LVS

4, 6, 16, 19, 21

(4, 5, 7, 8, 18, 19, 22, 24, 25)

n.c.

17 (20) GLL

18 (21) PGND

20 (23) GLR

22 (26) SHR

24 (28) GHR

13 (15) GHL

23 (27) FSR

15 (17) SHL

14 (16) FSL

UBA2032T

UBA2032TS

12 (14)

7 (9)

5 (6)

bridge disable

Fig.1 Block diagram.

Pin numbers refer to the UBA2032T.

Pin numbers in parenthesis refer to the UBA2032TS.

2005 Mar 24 4

Philips Semiconductors Product speciﬁcation

Full bridge driver IC UBA2032

PINNING

SYMBOL PIN DESCRIPTION

UBA2032T UBA2032TS

−LVS 1 1 negative supply voltage (for logic input)

EXTDR 2 2 oscillator signal input

+LVS 3 3 positive supply voltage (for logic input)

n.c. 4 4 not connected

n.c. −5 not connected

HV 5 6 high voltage supply input

n.c. 6 7 not connected

n.c. −8 not connected

VDD 7 9 internal low voltage supply

SU 8 10 input signal for start-up delay

DD 9 11 divider disable input

BD 10 12 bridge disable control input

RC 11 13 RC input for internal oscillator

SGND 12 14 signal ground

GHL 13 15 gate of higher left MOSFET

FSL 14 16 ﬂoating supply voltage left

SHL 15 17 source of higher left MOSFET

n.c. 16 18 not connected

n.c. −19 not connected

GLL 17 20 gate of lower left MOSFET

PGND 18 21 power ground

n.c. 19 22 not connected

GLR 20 23 gate of lower right MOSFET

n.c. 21 24 not connected

n.c. −25 not connected

SHR 22 26 source of higher right MOSFET

FSR 23 27 ﬂoating supply voltage right

GHR 24 28 gate of higher right MOSFET

2005 Mar 24 5

Philips Semiconductors Product speciﬁcation

Full bridge driver IC UBA2032

handbook, halfpage

UBA2032T

MGU543

EXTDR

n.c.

VDD

SGND

GHR

FSR

SHR

n.c.

GLR

n.c.

PGND

GLL

n.c.

SHL

FSL

GHL

−LVS

+LVS

Fig.2 Pin configuration (SO24).

handbook, halfpage

UBA2032TS

MGU544

EXTDR

n.c.

VDD

SGND

GHR

FSR

SHR

n.c.

GLR

n.c.

PGND

GLL

n.c.

SHL

FSL

GHL

−LVS

+LVS

Fig.3 Pin configuration (SSOP28).

FUNCTIONAL DESCRIPTION

Supply voltage

The UBA2032 is powered by a supply voltage applied to

pin HV, for instance the supply voltage of the full bridge.

The IC generates its own low supply voltage for the

internal circuitry. Therefore an additional low voltage

supply is not required. A capacitor has to be connected to

pin VDD to obtain a ripple-free internal supply voltage. The

circuitcanalsobepoweredbyalowvoltagesupplydirectly

applied to pin VDD. In this case pin HV should be

connected to pin VDD or pin SGND.

Start-up

With an increasing supply voltage the IC enters the

start-upstate; thehigher powertransistors arekept offand

the lower power transistors are switched on. During the

start-upstatethebootstrapcapacitorsarechargedandthe

bridge output current is zero. The start-up state is defined

until VDD =V

DD(UVLO), where UVLO stands for Under

Voltage Lock-Out. The state of the outputs during the

start-up phase is overruled by the bridge disable function.

Release of the power drive

At the moment the supply voltage on pin VDD or pin HV

exceeds the level of release power drive, the output

voltage of the bridge depends on the control signal on

pin EXTDR; see Table 1. The bridge position after

start-up, disable or delayed start-up (via pin SU), depends

on the status of pin DD and pin EXTDR. If pin DD = LOW

(divider enabled) the bridge will start in the pre-defined

position pin GLR and pin GHL = HIGH and pin GLL and

pin GHR = LOW. If pin DD = HIGH (divider disabled) the

bridge position will depend on the status of pin EXTDR.

If the supply voltage on pin VDD or pin HV decreases and

dropsbelow the reset level ofpower drivethe ICenters the

start-up state again.

Oscillation

At the point where the supply voltage on pin HV crosses

the level of release power drive, the bridge begins

commutating between the following two defined states:

•Higher left and lower right MOSFETs on,

higher right and lower left MOSFETs off

•Higher left and lower right MOSFETs off,

higher right and lower left MOSFETs on.

2005 Mar 24 6

Philips Semiconductors Product speciﬁcation

Full bridge driver IC UBA2032

The oscillation can take place in three different modes:

•Internal oscillator mode.

In this mode the bridge commutating frequency is

determined by the values of an external resistor (Rosc)

and capacitor (Cosc). In this mode pin EXTDR must be

connectedtopin +LVS.Torealizeanaccurate 50% duty

factor, the internal divider should be used. The internal

divider is enabled by connecting pin DD to pin SGND.

Due to the presence of the divider the bridge frequency

is half the oscillator frequency. The commutation of the

bridge will take place at the falling edge of the signal on

pin RC. To minimize the current consumption

pins +LVS, −LVS and EXTDR can be connected

together to either pin SGND or pin VDD. In this way the

current source in the logic voltage supply circuit is shut

off.

•External oscillator mode without the internal divider.

In the external oscillator mode the external source is

connectedtopin EXTDRandpin RCisshort-circuitedto

pin SGNDto disable theinternal oscillator. Ifthe internal

divider is disabled (pin DD connected to pin VDD) the

duty factor of the bridge output signal is determined by

the external oscillator signal and the bridge frequency

equals the external oscillator frequency.

•External oscillator mode with the internal divider.

The external oscillator mode can also be used with the

internal divider function enabled (pin RC and pin DD

connected to pin SGND). Due to the presence of the

dividerthebridgefrequency ishalftheexternal oscillator

frequency. The commutation of the bridge is triggered

by the falling edge of the EXTDR signal with respect to

V−LVS.

If the supply voltage on pin VDD or pin HV drops below the

reset level of power drive, the UBA2032 re-enters the

start-up phase. The design equation for the bridge

oscillator frequency is: .

Non-overlap time

The non-overlap time is the time between turning off the

conducting pair of MOSFETs and turning on the next pair.

The non-overlap time is realized by means of an adaptive

non-overlap circuit. With an adaptive non-overlap, the

applicationdeterminesthe durationofthe non-overlapand

makes the non-overlap time optimal for each frequency.

The non-overlap time is determined by the duration of the

falling slope of the relevant half bridge voltage (see Fig.4).

The occurrence of a slope is sensed internally. The

minimum non-overlap time is internally fixed.

Divider function

If pin DD is connected to pin SGND, then the divider

function is enabled/present. If the divider function is

present, there is no direct relation between the position of

the bridge output and the status of pin EXTDR.

Start-up delay

Normally,thecircuitstartsoscillatingassoonaspin VDD or

pin HV reaches the level of release power drive. At this

moment the gate drive voltage is equal to the voltage on

pin VDD for the low side transistors and VDD −0.6 V for the

high side transistors. If this voltage is too low for sufficient

drive of the MOSFETs the release of the power drive can

be delayed via pin SU. A simple RC filter (R between

pin VDD and pin SU; C between pin SU and pin SGND)

can be used to make a delay, or a control signal from a

processor can be used.

Bridge disable

Thebridgedisablefunctioncanbeused to switchoffallthe

MOSFETs as soon as the voltage on pin BD exceeds the

bridge disable voltage (1.29 V). The bridge disable

function overrules all the other states.

fbridge 1

kosc Rosc

×Cosc

×()

--------------------------------------------------

handbook, halfpage

t (sec)

MGU545

VGHR

VSHR

VGHL

VSHL

Vhalf bridge right

Vhalf bridge left

Fig.4 Half bridge and higher/lower side driver

output signals.

2005 Mar 24 7

Philips Semiconductors Product speciﬁcation

Full bridge driver IC UBA2032

Table 1 Logic table; note 1

Notes

1. X = don’t care.

2. BD, SU and DD logic levels are with respect to SGND;

EXTDR logic levels are with respect to −LVS.

3. GHL logic levels are with respect to SHL;

GHR logic levels are with respect to SHR;

GLL and GLR logic levels are with respect to PGND.

4. If pin DD = LOW the bridge enters the state (oscillation state and pin BD = LOW and pin SU = HIGH) in the

pre-defined position pin GHL = HIGH, pin GLR = HIGH, pin GLL = LOW and pin GHR = LOW.

5. Only if the level of pin EXTDR changes from HIGH-to-LOW, the level of outputs GHL, GHR, GLL and GLR changes

from LOW-to-HIGH or from HIGH-to-LOW.

DEVICE

STATUS INPUTS (2) OUTPUTS (3)

BD SU DD EXTDR GHL GHR GLL GLR

Start-up state HIGH X X X LOW LOW LOW LOW

LOW X X X LOW LOW HIGH HIGH

Oscillation state HIGH X X X LOW LOW LOW LOW

LOW LOW X X LOW LOW HIGH HIGH

LOW HIGH HIGH HIGH LOW HIGH HIGH LOW

LOW HIGH LOW LOW HIGH

LOW HIGH LOW(4) LOW HIGH LOW LOW HIGH

LOW-to-HIGH HIGH LOW LOW HIGH

HIGH HIGH LOW LOW HIGH

HIGH-to-LOW(5) LOW HIGH HIGH LOW

2005 Mar 24 8

Philips Semiconductors Product speciﬁcation

Full bridge driver IC UBA2032

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are measured with respect to

SGND; positive currents ﬂow into the IC.

Note

1. In accordance with the Human Body Model (HBM): equivalent to discharging a 100 pF capacitor through a 1.5 kΩ

series resistor.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VDD supply voltage (low voltage) DC value 0 14 V

transient at t < 0.1 µs 0 17 V

VHV supply voltage (high voltage) 0 550 V

VFSL ﬂoating supply voltage left VSHL =V

SHR = 550 V 0 564 V

VSHL =V

SHR = 0 V 0 14 V

VFSR ﬂoating supply voltage right VSHL =V

SHR = 550 V 0 564 V

VSHL =V

SHR = 0 V 0 14 V

VSHL source voltage for higher left

MOSFETs with respect to PGND and SGND −3 +550 V

with respect to SGND; t < 1 µs−14 −V

VSHR source voltage for higher right

MOSFETs with respect to PGND and SGND −3 +550 V

with respect to SGND; t < 1 µs−14 −V

VPGND power ground voltage with respect to SGND 0 5 V

V−LVS negative supply voltage for logic input t < 1 s 0 464 V

V+LVS positive supply voltage for logic input VHV = 450 V; t < 1 s 0 464 V

VHV = 0 V; DC value 0 14 V

VHV = 0 V; transient at t < 0.1 µs 0 17 V

Vi(EXTDR) input voltage from external oscillator

on pin EXTDR with respect to V−LVS 0V

+LVS V

Vi(RC) input voltage on pin RC DC value 0 VDD V

transient at t < 0.1 µs 0 17 V

Vi(SU) input voltage on pin SU DC value 0 VDD V

transient at t < 0.1 µs 0 17 V

Vi(BD) input voltage on pin BD DC value 0 VDD V

transient at t < 0.1 µs 0 17 V

Vi(DD) input voltage on pin DD DC value 0 VDD V

transient at t < 0.1 µs 0 17 V

SR slew rate at output pins repetitive 0 4 V/ns

Tjjunction temperature −40 +150 °C

Tamb ambient temperature −40 +150 °C

Tstg storage temperature −55 +150 °C

Vesd electrostatic discharge voltage on

pins HV, +LVS, −LVS, EXTDR, FSL,

GHL, SHL, SHR, GHR and FSR

note 1 −900 V

2005 Mar 24 9

Philips Semiconductors Product speciﬁcation

Full bridge driver IC UBA2032

THERMAL CHARACTERISTICS

QUALITY SPECIFICATION

In accordance with

“General Quality Specification for Integrated Circuits: SNW-FQ-611”

CHARACTERISTICS

Tj=25°C; all voltages are measured with respect to SGND; positive currents ﬂow into the IC; unless otherwise

speciﬁed.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient in free air

UBA2032T 80 K/W

UBA2032TS 100 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

High voltage

IHV high voltage supply current t < 0.5 s and VHV = 550 V 0 −30 µA

IFSL, IFSR high voltage ﬂoating supply

current t < 0.5 s and VFSL =V

FSR = 564 V 0 −30 µA

IEXTDR supply current on pin EXTDR t < 0.5 s and VEXTDR = 464 V 0 −30 µA

I+LVS supply current on pin +LVS t < 0.5 s and V+LVS = 464 V 0 −30 µA

I−LVS supply current on pin −LVS t < 0.5 s and V−LVS = 450 V 0 −30 µA

Start-up; powered via pin HV

Ii(HV) HV input current VHV = 11 V; note 1 −0.5 1.0 mA

VHV(rel) level of release power drive

voltage 11 12.5 14 V

VHV(UVLO) reset level of power drive voltage 8.5 10 11.5 V

VHV(hys) HV hysteresis voltage 2.0 2.5 3.0 V

VDD internal supply voltage VHV = 20 V 10.5 11.5 13.5 V

Start-up; powered via pin VDD

Ii(DD) VDD input current VDD = 8.25 V; note 2 −0.5 1.0 mA

VDD(rel) level of release power drive

voltage 8.25 9.0 9.75 V

VDD(UVLO) reset level of power drive voltage 5.75 6.5 7.25 V

VDD(hys) hysteresis voltage 2.0 2.5 3.0 V

2005 Mar 24 10

Philips Semiconductors Product speciﬁcation

Full bridge driver IC UBA2032

Output stage

Ron(H) higher MOSFETs on resistance VFSR =V

FSL = 12 V; with respect to

SHR and SHL; Isource =50mA 15 21 26 Ω

Roff(H) higher MOSFETs off resistance VFSR =V

FSL = 12 V; with respect to

SHR and SHL; Isink =50mA 91418Ω

Ron(L) lower MOSFETs on resistance VDD =12V; I

source =50mA 15 21 26 Ω

Roff(L) lower MOSFETs off resistance VDD =12V; I

sink = 50 mA 9 14 18 Ω

Io(source) output source current VDD =V

FSL =V

FSR =12V;

VGHR =V

GHL =V

GLR =V

GLL =0V 130 180 −mA

Io(sink) output sink current VDD =V

FSL =V

FSR =12V;

VGHR =V

GHL =V

GLR =V

GLL =12V 150 200 −mA

Vdiode bootstrap diode voltage drop Idiode = 1 mA 0.8 1.0 1.2 V

tslope minimum ∆V/∆t for adaptive

non-overlap absolute values 5 15 25 V/µs

tno(min) minimum non-overlap time 600 900 1300 ns

VFSL HS lockout voltage left 3.0 4.0 5.0 V

VFSR HS lockout voltage right 3.0 4.0 5.0 V

IFSL FS supply current left VFSL =12V 2 4 6 µA

IFSR FS supply current right VFSR =12V 246µA

DD input

VIH HIGH-level input voltage VDD =12V 6 −−V

VIL LOW-level input voltage −−3V

Ii(DD) input current into pin DD −−1µA

SU input

VIH HIGH-level input voltage VDD =12V 4 −−V

VIL LOW-level input voltage −−2V

Ii(SU) input current into pin SU −−1µA

External drive input

VIH HIGH-level input voltage with respect to V−LVS 4.0 −−V

VIL LOW-level input voltage with respect to V−LVS −−1.0 V

Ii(EXTDR) input current into pin EXTDR −−1µA

fbridge bridge frequency note 3 −−200 kHz

Low voltage logic supply

I+LVS low voltage supply current V+LVS =V

EXTDR = 5.75 to 14 Vwith

respect to V−LVS

−250 500 µA

V+LVS low voltage supply voltage with respect to V−LVS 5.75 −14 V

Bridge disable circuit

Vref(dis) disable reference voltage 1.23 1.29 1.35 V

Ii(BD) disable input current −−1µA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

2005 Mar 24 11

Philips Semiconductors Product speciﬁcation

Full bridge driver IC UBA2032

Notes

1. The current is specified without commutation of the bridge. The current into pin HV is limited by a thermal protection

circuit. The current is limited to 11 mA at Tj= 150 °C.

2. The current is specified without commutation of the bridge and pin HV is connected to VDD.

3. The minimum frequency is mainly determined by the value of the bootstrap capacitors.

Internal oscillator

fbridge bridge oscillating frequency note 3 −−100 kHz

∆fosc(T) oscillator frequency variation

with respect to temperature fbridge = 250 Hz and

Tamb =−40 to +150 °C−10 0 +10 %

∆fosc(VDD) oscillator frequency variation

with respect to VDD

fbridge = 250 Hz and

VDD = 7.25 to 14 V −10 0 +10 %

kHhigh level trip point VRC(high) =k

H×VDD 0.38 0.4 0.42

kLlow level trip point VRC(low) =k

L×VDD −0.01 −

kosc oscillator constant fbridge = 250 Hz 0.94 1.02 1.10

Rext external resistor to VDD 100 −−kΩ

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

2005 Mar 24 12

Philips Semiconductors Product speciﬁcation

Full bridge driver IC UBA2032

APPLICATION INFORMATION

Basic application

A basic full bridge configuration with an HID lamp is shown

in Fig.5. The bridge disable, the start-up delay and the

external drive functions are not used in this application.

The pins −LVS, +LVS, EXTDR and BD are short-circuited

to SGND. The internal oscillator is used and to realise a

50% duty cycle the internal divider function has to be used

by connecting pin DD to pin SGND.

The IC is powered by the high voltage supply. Because

the internal oscillator is used, the bridge commutating

frequency is determined by the values of Rosc and Cosc.

The bridge starts oscillating when the HV supply voltage

exceeds the level of release power drive (typically 12.5 V

onpin HV).Ifthesupplyvoltageonpin HVdropsbelowthe

reset level of power drive (typically 10 V on pin HV), the

UBA2032 enters the start-up state.

handbook, full pagewidth

UBA2032T

VDD

EXTDR

SGND

GHR

FSR

SHR

GLR

GLL

SHL

FSL

GHL

PGND

IGNITOR

Rosc

Cosc

high voltage

550 V (max)

GND

MGU546

−LVS

+LVS

R>100 Ω

(1)

R>100 Ω

(1)

R>100 Ω

(1)

R>100 Ω

(1)

Fig.5 Basic configuration.

(1) See Section “Gate resistors”.

2005 Mar 24 13

Philips Semiconductors Product speciﬁcation

Full bridge driver IC UBA2032

Application with external control

Figure 6 shows an application containing a system

ground-referenced control circuit. Pin +LVS can be

connected to the same supply as the external oscillator

control unit and pin −LVS is connected to pin SGND.

Pin RC is short-circuited to SGND. The bridge

commutation frequency is determined by the external

oscillator.The bridgedisable input(pin BD) canbe usedto

immediately turn off all four MOSFETs in the full bridge.

handbook, full pagewidth

UBA2032T

VDD

EXTDR

SGND

GHR

FSR

SHR

GLR

GLL

SHL

FSL

GHL

PGND

IGNITOR

high voltage

550 V (max)

low voltage

EXTERNAL

OSCILLATOR

CONTROL

CIRCUIT

GND

MGU547

−LVS

+LVS

R>100 Ω

(1)

R>100 Ω

(1)

R>100 Ω

(1)

R>100 Ω

(1)

Fig.6 External control configuration.

(1) See Section “Gate resistors”.

2005 Mar 24 14

Philips Semiconductors Product speciﬁcation

Full bridge driver IC UBA2032

Application with negative lamp voltage

The life of an HID lamp depends of the rate of sodium

migration through the quartz wall of the lamp. To minimize

this, the lamp must operate negative with respect to the

system ground. Figure 7 shows a full bridge with an HID

lamp, along with a control circuit referenced to the system

ground and with a bridge voltage operating at high

negative voltages with respect to the system ground.

Pin +LVS and pin HV can be connected to the same

supply as the control unit The output state of the bridge is

related to the position of pin EXTDR. See also the timing

diagram.

handbook, full pagewidth

UBA2032TS

VDD

EXTDR

SGND

GHR

FSR

SHR

GLR R>100 Ω(1)

R>100 Ω(1)

GLL

SHL

FSL

GHL

PGND

IGNITOR

BRIDGE

CONTROL

UNIT

system

GND

high voltage

−450 V (max)

+ low voltage supply

MGU803

−LVS

+LVS

Fig.7 Application with a negative lamp voltage.

(1) See Section “Gate resistors”.

2005 Mar 24 15

Philips Semiconductors Product speciﬁcation

Full bridge driver IC UBA2032

Additional application information

GATE RESISTORS

At ignition of an HID lamp, a large EMC spark occurs. This

can result in a large voltage transient or oscillation at the

gates of the full bridge MOSFETs (LL, LR, HR and HL).

When these gates are directly coupled to the gate drivers

(pins GHR, GLR, GHL and GLL), voltage overstress of the

driver outputs may occur. Therefore, it is advised to add a

resistor with a minimum value of 100 Ωin series with each

gatedrivertoisolate the gatedriveroutputsfrom the actual

power MOSFETs gate.

Itmay benecessary toadd adiode inparallel tothese gate

resistors in order:

1. To switch off the power transistor in time

2. Toensurethatthepowertransistorremainsinoff-state

during a high ∆V/∆t at the bridge nodes; typical use

depends on the characteristics (gate charge, Miller

capacitance) of the power MOSFETs.

GATE CHARGE AND SUPPLY CURRENT AT HIGH FREQUENCY

USE

The total gate current needed to charge the gates of the

power MOSFETs equals:

Where:

Igate = gate current

fbridge = bridge frequency

Qgate = gate charge.

This current is supplied via the internal low voltage supply

(VDD). Since this current is limited to 11 mA (see

Section “Characteristics”; table note 1), at higher

frequencies and with MOSFETs having a relative high

gate charge, this maximum VDD supply current may not be

sufficient anymore. As a result the internal low voltage

supply (VDD) and the gate drive voltage will drop resulting

in an increase of the on resistance (Ron) of the full bridge

MOSFETs. In this case an auxiliary low voltage supply is

necessary.

Igate 4f

bridge Qgate

××=

2005 Mar 24 16

Philips Semiconductors Product speciﬁcation

Full bridge driver IC UBA2032

PACKAGE OUTLINES

UNIT A

max. A

(1)

(1) (1)

ywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

inches

2.65 0.3

0.1 2.45

2.25 0.49

0.36 0.32

0.23 15.6

15.2 7.6

7.4 1.27 10.65

10.00 1.1

1.0 0.9

0.4 8

0.25 0.1

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.

1.1

0.4

SOT137-1

detail X

(A )

0.25

075E05 MS-013

pin 1 index

0.1 0.012

0.004 0.096

0.089 0.019

0.014 0.013

0.009 0.61

0.60 0.30

0.29 0.05

1.4

0.055

0.419

0.394 0.043

0.039 0.035

0.016

0.01

0.25

0.01 0.004

0.043

0.016

0.01

0 5 10 mm

scale

SO24: plastic small outline package; 24 leads; body width 7.5 mm SOT137-1

99-12-27

03-02-19

2005 Mar 24 17

Philips Semiconductors Product speciﬁcation

Full bridge driver IC UBA2032

UNIT A

(1)

(1) (1)

QZywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.21

0.05 1.80

1.65 0.38

0.25 0.20

0.09 10.4

10.0 5.4

5.2 0.65 1.25

7.9

7.6 0.9

0.7 1.1

0.7 8

0.13 0.10.2

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.

1.03

0.63

SOT341-1 MO-150 99-12-27

03-02-19

detail X

(A )

114

28 15

0.25

pin 1 index

0 2.5 5 mm

scale

SSOP28: plastic shrink small outline package; 28 leads; body width 5.3 mm SOT341-1

max.

2005 Mar 24 18

Philips Semiconductors Product speciﬁcation

Full bridge driver IC UBA2032

SOLDERING

Introduction to soldering surface mount packages

Thistextgivesa very briefinsighttoa complex technology.

A more in-depth account of soldering ICs can be found in

our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).

There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering can still be used for

certainsurfacemountICs,butit is not suitableforfinepitch

SMDs. In these situations reflow soldering is

recommended.

Reﬂow soldering

Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied

tothe printed-circuit board by screenprinting, stencillingor

pressure-syringe dispensing before package placement.

Driven by legislation and environmental forces the

worldwide use of lead-free solder pastes is increasing.

Several methods exist for reflowing; for example,

convection or convection/infrared heating in a conveyor

type oven. Throughput times (preheating, soldering and

cooling) vary between 100 seconds and 200 seconds

depending on heating method.

Typical reflow peak temperatures range from

215 °C to 270 °Cdepending on solder paste material. The

top-surface temperature of the packages should

preferably be kept:

•below 225 °C (SnPb process) or below 245 °C (Pb-free

process)

– for all BGA, HTSSON..T and SSOP..T packages

– for packages with a thickness ≥2.5 mm

– for packages with a thickness < 2.5 mm and a

volume ≥350 mm3 so called thick/large packages.

•below 240 °C (SnPb process) or below 260 °C (Pb-free

process) for packages with a thickness < 2.5 mm and a

volume < 350 mm3 so called small/thin packages.

Moisture sensitivity precautions, as indicated on packing,

must be respected at all times.

Wave soldering

Conventional single wave soldering is not recommended

forsurfacemountdevices(SMDs)or printed-circuit boards

with a high component density, as solder bridging and

non-wetting can present major problems.

To overcome these problems the double-wave soldering

method was specifically developed.

If wave soldering is used the following conditions must be

observed for optimal results:

•Use a double-wave soldering method comprising a

turbulent wave with high upward pressure followed by a

smooth laminar wave.

•For packages with leads on two sides and a pitch (e):

– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the

transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the

printed-circuit board.

The footprint must incorporate solder thieves at the

downstream end.

•Forpackageswithleadsonfour sides, the footprintmust

be placed at a 45°angle to the transport direction of the

printed-circuit board. The footprint must incorporate

solder thieves downstream and at the side corners.

During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be

applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the

adhesive is cured.

Typical dwell time of the leads in the wave ranges from

3 seconds to 4 seconds at 250 °C or 265 °C, depending

on solder material applied, SnPb or Pb-free respectively.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two

diagonally-opposite end leads. Use a low voltage (24 V or

less) soldering iron applied to the flat part of the lead.

Contact time must be limited to 10 seconds at up to

300 °C.

When using a dedicated tool, all other leads can be

soldered in one operation within 2 seconds to 5 seconds

between 270 °C and 320 °C.

2005 Mar 24 19

Philips Semiconductors Product speciﬁcation

Full bridge driver IC UBA2032

Suitability of surface mount IC packages for wave and reﬂow soldering methods

Notes

1. Formore detailed informationon theBGApackages referto the

“(LF)BGAApplication Note”

(AN01026);order a copy

from your Philips Semiconductors sales office.

2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

temperature (with respect to time) and body size of the package, there is a risk that internal or external package

cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the

Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

3. These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account

be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature

exceeding 217 °C±10 °C measured in the atmosphere of the reflow oven. The package body peak temperature

must be kept as low as possible.

4. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder

cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,

the solder might be deposited on the heatsink surface.

5. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.

The package footprint must incorporate solder thieves downstream and at the side corners.

6. Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is definitely not

suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

7. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than

0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

8. Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted

on flex foil. However, the image sensor package can be mounted by the client on a flex foil by using a hot bar

soldering process. The appropriate soldering profile can be provided on request.

9. Hot bar soldering or manual soldering is suitable for PMFP packages.

PACKAGE(1) SOLDERING METHOD

WAVE REFLOW(2)

BGA, HTSSON..T(3), LBGA, LFBGA, SQFP, SSOP..T(3), TFBGA,

VFBGA, XSON not suitable suitable

DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP, HSQFP, HSSON,

HTQFP, HTSSOP, HVQFN, HVSON, SMS not suitable(4) suitable

PLCC(5), SO, SOJ suitable suitable

LQFP, QFP, TQFP not recommended(5)(6) suitable

SSOP, TSSOP, VSO, VSSOP not recommended(7) suitable

CWQCCN..L(8), PMFP(9), WQCCN..L(8) not suitable not suitable

2005 Mar 24 20

Philips Semiconductors Product speciﬁcation

Full bridge driver IC UBA2032

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseor at anyotherconditions abovethosegiven in the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuchapplicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no licence or title under any patent,

makes no representations or warranties that these

products are free from patent, copyright, or mask work

right infringement, unless otherwise specified.

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Philips Semiconductors – a worldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825

For sales ofﬁces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

Printed in The Netherlands R79/03/pp21 Date of release: 2005 Mar 24 Document order number: 9397 750 14911