Pre-Irradiation
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036AB)
01/03/01
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Product Summary
Part Number Radiation Level RDS(on) ID
IRHG7110 100K Rads (Si) 0.6Ω1.0A
IRHG3110 300K Rads (Si) 0.6Ω 1.0A
IRHG4110 600K Rads (Si) 0.6Ω1.0A
IRHG8110 1000K Rads (Si) 0.6Ω 1.0A
Features:
nSingle Event Effect (SEE) Hardened
nLow RDS(on)
nLow Total Gate Charge
nProton Tolerant
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nCeramic Package
nLight Weight
For footnotes refer to the last page
MO-036AB
IRHG7110
100V, QUAD N-CHANNEL
RAD-Hard
™
HEXFET
®
MOSFET TECHNOLOGY
International Rectifier’s RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
f or space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
ver ters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
PD - 90670A
Absolute Maximum Ratings (Per Die)
Parameter Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 1.0
ID @ VGS = 12V, T C = 100°C Continuous Drain Current 0.6
IDM Pulsed Drain Current ➀ 4.0
PD @ T C = 25°C Max. Power Dissipation 1.4 W
Linear Derating Factor 0.011 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy➁ 56 mJ
IAR Avalanche Current ➀ 1.0 A
EAR Repetitive Avalanche Energy ➀ 0.14 mJ
dv/dt Peak Diode Recovery dv/dt ➂ 2.4 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300 (0.63in./1.6mm from case for 10s)
Weight 1.3 (Typical) g
oC
A
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2www.irf.com
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter Min Typ Max Units T est Conditions
ISContinuous Source Current (Body Diode) — — 1.0
ISM Pulse Source Current (Body Diode) ➀— — 4.0
VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 1.0A, VGS = 0V ➃
trr Reverse Recovery Time — — 110 nS Tj = 25°C, IF = 1.0A, di/dt ≥ 100A/µs
QRR Reverse Recovery Charge — — 390 nC VDD ≤ 25V ➃
ton Forward Turn-On Time Intrinsic tur n-on time is negligible. Tu rn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.125 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.7 VGS = 12V, ID = 1.0A
Resistance — — 0.6 VGS = 12V, ID = 0.6A
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V V DS = VGS, ID = 1.0mA
gfs Forward Transconductance 0.7 — S ( )V
DS > 15V, IDS = 0.6A ➃
IDSS Zero Gate Voltage Drain Current — — 25 VDS= 80V, VGS= 0V
— — 250 VDS = 80V,
VGS = 0V, TJ =125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 11 VGS =12V, ID = 1.0A,
Qgs Gate-to-Source Charge — — 3.0 nC VDS = 50V
Qgd Gate-to-Drain (‘Miller’) Charge — — 4.0
td(on) Turn-On Delay Time — — 12 VDD = 50V, ID = 1.0A,
trRise Time — — 16 VGS =12V, RG = 24Ω
td(off) Turn-Off Delay Time — — 65
tfFall Time — — 45
LS + LDTotal Inductance — 10 — Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss Input Capacitance — 300 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 100 — p F f = 1.0MHz
Crss Reverse Transfer Capacitance — 16 —
nA
Ω
➃
nH
ns
µA
Ω
Thermal Resistance (Per Die)
Parameter Min Typ Max Units T est Conditions
RthJC Junction-to-Case — — 17
RthJA Junction-to-Ambient — — 90 Typical socket mount
°C/W
—
—
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Pre-Irradiation IRHG7110
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅(Per Die)
Parameter 100K Rads(Si)1 300K to 1000K Rads (Si)2
Units
Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage 100 — 100 — V VGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold Voltage 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0mA
IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V
IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V
IDSS Zero Gate Voltage Drain Current — 25 — 25 µA VDS= 80V, VGS =0V
RDS(on) Static Drain-to-Source ➃ — 0.56 — 0.66 Ω VGS = 12V, ID = 0.6A
On-State Resistance (TO-39)
RDS(on) Static Drain-to-Source ➃ — 0.60 — 0.70 Ω VGS = 12V, I D = 0.6A
On-State Resistance (MO-036AB)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested f or total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHG7110
2. Part number IRHG3110, IRHG4110, IRHG8110
Fig a. Single Event Effect, Safe Operating Area
VSD Diode Forward Voltage ➃ — 1.5 — 1.5 V VGS = 0V, IS =1.0A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
T able 2. Single Event Effect Safe Operating Area (P er Die)
I on LET Energy Range VDS (V)
MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu 28.0 285 43.0 100 100 100 80 60
B r 36.8 305 39.0 100 90 70 50 —
0
20
40
60
80
100
120
0 -5 -10 -15 -20 -25
VGS
VDS
Cu
Br
Radiation Characteristics
IRHG7110 Pre-Irradiation
4www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.01
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
1
10
100
5 7 9 11 13 15
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
12V
1.0A
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Pre-Irradiation IRHG7110
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
100
200
300
400
500
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Crss
Coss
Ciss
0 4 8 12 16
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
1.0A
V = 20V
DS
V = 50V
DS
V = 80V
DS
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J°
T = 25 C
J°
0.1
1
10
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
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Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
VGS
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100 1000
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectan
g
ular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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Pre-Irradiation IRHG7110
QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
.
25 50 75 100 125 150
0
30
60
90
120
150
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
0.45A
0.63A
1.0A
VGS
IRHG7110 Pre-Irradiation
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➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
➅ Total Dose Irradiation with V DS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 25V, starting TJ = 25°C, L= 112mH,
Peak IL = 1.0A, VGS = 12V
➂ ISD ≤ 1.0A, di/dt ≤ 187A/µs,
VDD ≤ 100V, TJ ≤ 150°C
Case Outline and Dimensions — MO-036AB
Footnotes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/01
