2SC1959
2003-03-24
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SC1959
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
• Excellent hFE linearity : hFE (2) = 25 (min): VCE = 6 V, IC = 400 mA
• 1 watt amplifier applications.
• Complementary to 2SA562TM.
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 35 V
Collector-emitter voltage VCEO 30 V
Emitter-base voltage VEBO 5 V
Collector current IC 500 mA
Base current IB 100 mA
Collector power dissipation PC 500 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55~150 °C
Electrical Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 35 V, IE = 0 0.1 µA
Emitter cut-off current IEBO V
EB = 5 V, IC = 0 0.1 µA
hFE (1)
(Note)
VCE = 1 V, IC = 100 mA 70 400
DC current gain
hFE (2)
(Note)
VCE = 6 V, IC = 400 mA 25
Collector-emitter saturation voltage VCE (sat) I
C = 100 mA, IB = 10 mA 0.1 0.25 V
Base-emitter voltage VBE V
CE = 1 V, IC = 100 mA 0.8 1.0 V
Transition frequency fT V
CE = 6 V, IC = 20 mA 300 MHz
Collector output capacitance Cob V
CB = 6 V, IE = 0, f = 1 MHz 7 pF
Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400
h
FE (2) classification O: 25 (min), Y: 40 (min)
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)