94
Notice In t h e a b s e n c e o f c o n firmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet Internet address for Electronic Components Group http://sharp-world.com/ecg/
GH6M005A5BHologram Lasers
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol Rating Unit
1Optical power output PH4.5 mW
Reverse voltage Laser VR
2V
2Operating temperature Topr -10 to +60 ˚C
2Storage temperature Tstg -40 to +85 ˚C
3Soldering temperature Tsold 260 ˚C
1Output power from hologram laser CW (Continuous Wave) drive
2Case temperature
3At the position of 1.6mm from the lead base (Within 5s)
Signal detection photodiode
15 V
Photodiode 30 V
ø8.2
+
+
0
0.05
3+
0
0.1
0.8±0.25=4±0.2
2.4±0.15
(1.5)
0.4±0.1
45˚±1˚
45˚±1˚
30
0.1
Hologram device
Emission point
1.31±0.1 from reference plane
Reference plane
Z
XY
Z
X
Y
Y
Z
X
ø8.2+
0
0.05
ø6.1 to 6.3
ø6.6±0.2
3.2±0.15
4.77±
0.15
3.8±
0.5
2.0±0.15
(0.8±
0.2
)
3.3±
0.2
1.2±
0.2
12-0.4±0.1
2±
0.2
(0.5±
0.2
)
ø7.5
MAX.
GH6M005A5B
Outline Dimensions
3mm Thickness Resin Stem Hologram
Laser for Playback Only MD Player
Terminal connection Pin configuration
(Unit : mm)
Features
(1) Super-thin package (3mm thickness) due to insert frame
structure
(2) Operating current
Iop : TYP. 28mA
Applications
(1) Playback only MD players
LD PIN D3 D2 NC NC
GND K NC D4 D1 NC
D3 D2
D4 D1
qwerty
!2 !1 !0 o i u
qwerty
!2!1!0oiu
Y
Z
X
95
GH6M005A5BHologram Lasers
Electro-optical Characteristics (TC=25˚C)
Parameter Symbol MAX. Unit
Focal offset DEF +0.5 µm
Differential efficiency ηd1.0 mW/mA
Conditions MIN. TYP.
Collimated lens output power
PCL=1.1mW
-0.5 -
1.8mW
I(2.7mW)-I(0.9mW) 0.2 0.6
1Focal error symmetry BFES -15 - +15 %
2Radial offset 80 - 120 %
4Main spot balance MSB 70 100 130 %
3FES output amplitude IFES 2.0 4.2 6.1 µA
5Stray light PH=4mW - - 0.1 µA
Threshold current Ith 12030mA
Operating current Iop PH=2.7mW 52840mA
Operating voltage Vop -1.92.2V
Output current Im0.001 - 0.2 mA
1(ab) / (a+b) 2D1 / D4 (focal servo ON)
3D2D3 (Focal vibration)
4(D1+D4) / (D2+D3)
5Output of D2, D3 when hologram output is 4mW and outside
light is cut off.
a (+amplitude of FES)
b (amplitude of FES)
NA=0.47
f =2.56mm
NA=0.18
f =8.18mm
Disc
(SONY : YEDS-18)
Actuator
Collimated lens
Hologram laser
Laser driver
ACC drive
Measuring System of Hologram Laser
Wavelength λp770 780 790 nm
PH=2.7mW, VR=15V
Notice In t h e a b s e n c e o f c o n firmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet Internet address for Electronic Components Group http://sharp-world.com/ecg/
96
GH6M005A5BHologram Lasers
Electro-optical Characteristics of Laser Diode (Without Hologram Device) (Design Standard*)
(TC=25˚C)
Parameter Symbol MAX. Unit
Emission
characteristics
Parallel ø// +2 ˚
+3
Chip thickness 55 µm
Conditions MIN. TYP.
-2 -
Perpendicular -3 - ˚
Active layer to chip edge - -
ø
X, Y, Z -80 - +80 µm
Po=3mW
Electro-optical Characteristics of Photodiode for Signal Detection (Design Standard*)
(TC=25˚C)
Parameter Symbol Unit
Reverse voltage VRV
Response time tr, tf ns
Conditions MIN. TYP.
12.5 -
-10
IR=10µAMAX.
50
Terminal capacitance CtVR=12.5V, f=1MHz 1.2 - 5 pF
1.4 - 5.8
Sensitivity 0.4 0.5 0.65 A/W
VR=15V, RL=180120
- 10 200
D1, D4 S
Electro-optical Characteristics of Hologram Laser (Design Standard*) (TC=25˚C)
Parameter MAX. Unit
4Focal error noise +7 %
Space between main and sub beam - µm
Conditions MIN. TYP.
-7 -
Disc surface - 19.7
1RF output amplitude 58.4-µA
2RES output amplitude 1 2 3.5 µA
3Focal error signal capture range -19-µm
1Amplitude of D1+D2+D3+D4 (focal servo ON, radial servo ON)
2Amplitude of D1D4 (focal servo ON)
a
b/a
b
PCL=1.1mW
Optical Characteristics of Hologram Device (Design Standard*) (TC=25˚C)
Parameter MAX. Unit
Grating diffraction intensity ratio (+1 : -1)
1.1 -
Grating rotation angle -˚
Conditions MIN. TYP.
0.9 1
to hologram parting line - 1.16
Transmissive wave aberration - - λ/8 -
Surface parallelism - - 5 min.
Grating diffraction intensity ratio (0 : 1)
9 : 1 10.5 : 1 12 : 1 -
Hologram diffraction efficiency (0 : 1) - 80 : 8 - %
λp=780nm
Half intensity angle Parallel θ// 9-18
˚
Perpendicular θ⊥ 28 - 45 ˚
Misalignment position
Kink LKink -15 - +15 %
Interference pattern intensity αPo=3mW - - 0.95 -
D2, D3
λp=780nm
D2, D3
D1, D4
34
Electrical Characteristics of Monitor Photodiode (Design Standard*) (TC=25˚C)
Parameter Symbol MAX. Unit
150
Terminal capacitance Ct-pF
Conditions MIN. TYP.
Dark current -- nA
-9
IDVR=15V
Deviation
angle
* These parameters are not guaranteed performance, but general specifications of each optical element which makes up a hologram laser.
Please refer to the chapter "Handling Precautions"
Notice In t h e a b s e n c e o f c o n firmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet Internet address for Electronic Components Group http://sharp-world.com/ecg/
115
Application Circuits
NOTICE
The circuit application examples in this publication are provided to explain representative applications
of SHARP devices and are not intended to guarantee any circuit design or license any intellectual
property rights. SHARP takes no responsibility for any problems related to any intellectual property
right of a third party resulting from the use of SHARP's devices.
Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
SHARP reserves the right to make changes in the specifications, characteristics, data, materials,
structure, and other contents described herein at any time without notice in order to improve design or
reliability. Manufacturing locations are also subject to change without notice.
Observe the following points when using any devices in this publication. SHARP takes no responsibility
for damage caused by improper use of the devices which does not meet the conditions and absolute
maximum ratings to be used specified in the relevant specification sheet nor meet the following
conditions:
(i) The devices in this publication are designed for use in general electronic equipment designs such as:
--- Personal computers
--- Office automation equipment
--- Telecommunication equipment [terminal]
--- Test and measurement equipment
--- Industrial control
--- Audio visual equipment
--- Consumer electronics
(ii)Measures such as fail-safe function and redundant design should be taken to ensure reliability and
safety when SHARP devices are used for or in connection with equipment that requires higher
reliability such as:
--- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.)
--- Traffic signals
--- Gas leakage sensor breakers
--- Alarm equipment
--- Various safety devices, etc.
(iii)SHARP devices shall not be used for or in connection with equipment that requires an extremely
high level of reliability and safety such as:
--- Space applications
--- Telecommunication equipment [trunk lines]
--- Nuclear power control equipment
--- Medical and other life support equipment (e.g., scuba).
Contact a SHARP representative in advance when intending to use SHARP devices for any "specific"
applications other than those recommended by SHARP or when it is unclear which category mentioned
above controls the intended use.
If the SHARP devices listed in this publication fall within the scope of strategic products described in
the Foreign Exchange and Foreign Trade Control Law of Japan, it is necessary to obtain approval to
export such SHARP devices.
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the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any
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