AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC949
v02.0211
General Description
Features
Functional Diagram
The HMC949 is a 4 stage GaAs pHEMT MMIC 2
Watt Power Amplier with an integrated temperature
compensated on-chip power detector which operates
between 12 and 16 GHz. The HMC949 provides
31 dB of gain, +35.5 dBm of saturated output power,
and 26% PAE from a +7V supply. The HMC949
exhibits excellent linearity and is optimized for high
capacity digital microwave radio. It is also ideal for
13.75 to 14.5 GHz Ku Band VSAT transmitters as well
as SATCOM applications. All data is taken with the
chip in a 50 Ohm test xture connected via (2) 0.025
mm (1 mil) diameter wire bonds of 0.31 mm (12 mil)
length.
Saturated Output Power: +35.5 dBm @ 26% PAE
High Output IP3: +42 dBm
High Gain: 31 dB
DC Supply: +7V @ 1200 mA
No External Matching Required
Die Size: 2.71 x 1.73 x 0.1 mm
Electrical Specications
TA = +25° C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200mA [1]
Typical Applications
The HMC949 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT & SATCOM
• Military & Space
Parameter Min. Typ. Max. Units
Frequency Range 12 - 16 GHz
Gain 28 31 dB
Gain Variation Over Temperature 0.05 dB/ °C
Input Return Loss 10 dB
Output Return Loss 17 dB
Output Power for 1 dB Compression (P1dB) 32.5 34.5 dBm
Saturated Output Power (Psat) 35.5 dBm
Output Third Order Intercept (IP3)[2] 42 dBm
Total Supply Current (Idd) 1200 mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 1200mA typical.
[2] Measurement taken at +7V @ 1200mA, Pout / Tone = +22 dBm
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 2
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain &
Return Loss vs. Frequency Gain vs. Temperature
P1dB vs. Temperature P1dB vs. Supply Voltage
HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
-30
-20
-10
0
10
20
30
40
10 11 12 13 14 15 16 17 18
S21
S11
S22
FREQUENCY (GHz)
RESPONSE (dB)
18
22
26
30
34
38
11 12 13 14 15 16 17
+25C
+85C
-55C
FREQUENCY (GHz)
GAIN (dB)
-20
-16
-12
-8
-4
0
11 12 13 14 15 16 17
+25C
+85C
-55C
FREQUENCY (GHz)
RETURN LOSS (dB)
-30
-25
-20
-15
-10
-5
0
11 12 13 14 15 16 17
+25C
+85C
-55C
FREQUENCY (GHz)
RETURN LOSS (dB)
26
28
30
32
34
36
38
12 13 14 15 16
+25C
+85C
-55C
FREQUENCY (GHz)
P1dB (dBm)
26
28
30
32
34
36
38
12 13 14 15 16
5V
6V
7V
FREQUENCY (GHz)
P1dB (dBm)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Output IP3 vs.
Supply Current, Pout/Tone = +22 dBm
Output IP3 vs.
Temperature, Pout/Tone = +22 dBm
Psat vs. Supply Current (Idd)P1dB vs. Supply Current (Idd)
HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
26
28
30
32
34
36
38
12 13 14 15 16
800 mA
900 mA
1000 mA
1100 mA
1200 mA
FREQUENCY (GHz)
P1dB (dBm)
26
28
30
32
34
36
38
12 13 14 15 16
800 mA
900 mA
1000 mA
1100 mA
1200 mA
FREQUENCY (GHz)
Psat (dBm)
30
32
34
36
38
40
42
44
46
48
12 13 14 15 16
+25C
+85C
-55C
FREQUENCY (GHz)
IP3 (dBm)
30
32
34
36
38
40
42
44
46
48
12 13 14 15 16
800 mA
900 mA
1000 mA
1100 mA
1200 mA
FREQUENCY (GHz)
IP3 (dBm)
Psat vs. Temperature Psat vs. Supply Voltage
28
30
32
34
36
38
12 13 14 15 16
+25C
+85C
-55C
FREQUENCY (GHz)
Psat(dBm)
28
30
32
34
36
38
12 13 14 15 16
5V
6V
7V
FREQUENCY (GHz)
Psat(dBm)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 4
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Power Compression @ 14 GHz Detector Voltage Over Temperature
Output IP3 vs.
Supply Voltage, Pout/Tone = +22 dBm
Output IM3 @ Vdd = +6V Output IM3 @ Vdd = +7V
Output IM3 @ Vdd = +5V
30
32
34
36
38
40
42
44
46
48
12 13 14 15 16
5V
6V
7V
FREQUENCY (GHz)
IP3 (dBm)
0
10
20
30
40
50
60
70
80
10 12 14 16 18 20 22 24 26 28
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
Pout/TONE (dBm)
IM3 (dBc)
0
10
20
30
40
50
60
70
80
10 12 14 16 18 20 22 24 26 28
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
Pout/TONE (dBm)
IM3 (dBc)
0
10
20
30
40
50
60
70
80
10 12 14 16 18 20 22 24 26 28
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
Pout/TONE (dBm)
IM3 (dBc)
0
5
10
15
20
25
30
35
40
-10 -8 -6 -4 -2 0 2 4 6 8 10
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), GAIN (dB), PAE (%)
0.01
0.1
1
10
-5 3 11 19 27 35
12.5GHz +25C
12.5GHz +85C
12.5GHz -55C
15.5GHz +25C
15.5GHz +85C
15.5GHz -55C
OUTPUT POWER (dBm)
Vref-Vdet (V)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +8V
RF Input Power (RFIN) +24 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 133 mW/°C above 85 °C) 8.6 W
Thermal Resistance
(channel to die bottom) 7.5 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Vdd (V) Idd (mA)
+5.0 1200
+6.0 1200
+7.0 1200
Note: Amplier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 1200 mA
Typical Supply Current vs. Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Power Dissipation
Gain & Power vs.
Supply Current @ 14 GHz
Gain & Power vs.
Supply Voltage @ 14 GHz
Reverse isolation vs. Temperature
-80
-70
-60
-50
-40
-30
-20
-10
0
11 12 13 14 15 16 17
+25C
+85C
-55C
FREQUENCY (GHz)
ISOLATION (dB)
20
25
30
35
40
45
50
5 5.5 6 6.5 7
Gain
P1dB
Psat
Vdd (V)
Gain (dB), P1dB (dBm), Psat (dBm)
15
20
25
30
35
40
800 900 1000 1100 1200
Gain
P1dB
Psat
Idd (mA)
Gain (dB), P1dB (dBm), Psat (dBm)
0
1
2
3
4
5
6
7
8
9
10
-10 -8 -6 -4 -2 0 2 4 6 8
Max Pdis @ 85C
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 6
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
Die Packaging Information [1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Pad Descriptions
Pad Number Function Description Interface Schematic
1 RFIN This pad is DC coupled and matched to 50 Ohms
over the operating frequency range.
2 - 5
9 - 10
Vdd1, Vdd2,
Vdd3, Vdd4
Vdd4, Vdd5
Drain bias voltage for the amplier. External bypass
capacitors of 100 pF are required for each pad, followed by
common 0.1 µF capacitors.
6 RFOUT This pad is DC coupled
and matched to 50 Ohms.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 7
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Application Circuit
HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Pad Number Function Description Interface Schematic
7 Vdet DC voltage representing RF output power rectied by diode
which is biased through an external resistor.
8 Vref DC voltage of diode biased through external resistor, used
for temperature compensation of Vdet.
11 - 14 Vgg1
Gate control for amplier. External bypass capacitors
of 100 pF and 0.1 µF are required. These pads are
connected on chip
Die Bottom GND Die bottom must be connected to RF/DC ground.
Pad Descriptions (continued)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 8
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Assembly Diagram
HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 9
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be located as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 10
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Notes:
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
