SQUARE D CO/ GENERAL 55 D MM 8525508 0002097 2 mm 3918590 GENERAL SEMICONDUCTOR 95D 02097 D T- 35-15 : General eile x Semiconductor mae) PLEA Pay tats) Me Industries, Inc. square n company NPN SWITCHING POWER TRANSISTORS NPN This unique series utilizes General Semiconductor Industries C?R process which 150, 200V describes a manufacturing technology that provides surface stabilization for high | 49 AMP SWITCHING voltage operation and enhances long term reliability. TO-63 *MAXIMUM RATINGS (Tc = 25C unless otherwise noted) RATING SYMBOL 2N2817 2N2818 UNIT Collector-Base Voltage Vepo r 150 200 Volts CollectorEmitter Voltage Vcro 150 200 Volts Emitter-Base Voltage Vero 8.0 8.0 Volts 4 Collector CurrentContinuous le 20 20 Amps Base CurrentContinuous {s 45 45 Amps Total Power Dissipation @Tc = 25C Pp 200 200 Watts Junction to Case Thermal Resistance Rec 0.875 0.875 C/W eT Oe og motion goon -65 to +200 | -65 to +200 C *ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) 2N2817 2N2818 SYMBOL CONDITIONS Min Max Min Max Unit Vceoteua tc = 100mA 150 _ 200 - Volts Vas = -1.5V, Te = 150C . - _ - - \cex Voce = 150V2N2817 _ 20 mA Vee = 200V--2N2818 _ _ = 20 Voc = -15V : _ _ _ Ioex Voce = 150V2N2817 _ 2.0 _ - mA Vee = 200V2N2818 _ - _ 2.0 lzB0 Vea = 8.0V _ 250 _ 250 uA hee t Voce = 3.0V, Ic = 10A 10 | 650 10 50 Veeteau t Io = 10A, Ip = 1.5A _ 15 _ 1.5 Volts Veetean T lo = 10A, Isp = 1.5A - 2.5 - 25 Volts [heel Voce = 3.0V, ic = 10A, f = 1MHz 06 - 0.6 - SWITCHING t Realstive Load - 3.5 - 3.5 us t, Veo = 30V - 6.0 - 6.0 us : ti le = NDA 18 6.0 6.0 US ton te = 10u8- SA _- 3.5 _ 3.5 HS tort _ 12 - 12 HS *JEDEC registered data. + Pulse Conditions: Width = 10us; Duty Cycle = 2% (measured using Kelvin connections). ae (ere Meriter tila cera Ceirciec cco (teem UCU aM A 4 woe PTTL Lis plo nd BPS er RC SEL 24 4-11