SD101A - SD101C SCHOTTKY BARRIER DIODES
FEATURES :
• For general purpose applications
• The LL101 series is a metal-on-silicon Schottky
barrier device which is protected by a PN junction
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
• These diodes are also available in the MiniMELF case
with type designations LL101A thru LL101C.
• Pb / RoHS Free
Case: DO-35 Glass Case
Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
C ambient temperature unless otherwise specified
Symbol Value Unit
SD101A 60
SD101B 50
SD101C 40
Maximum Single Cycle Surge 10ms Square Wave
2 A
Power Dissipation (Infinite Heatsink)
mW
Thermal Resistance Junction to Ambient Air R
°C/mW
Junction Temperature
°C
Storage temperature range
°C
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
Electrical Characteristics
(T
= 25°C unless otherwise noted)
Parameter Symbol Min Typ Max Unit
SD101A 60 - -
SD101B 50 - - V
SD101C 40 - -
SD101A
- - 200
SD101B
- - 200
SD101C
- - 200
SD101A - - 0.41
SD101B - - 0.4
SD101C - - 0.39
SD101A - - 1.0
SD101B - - 0.95
SD101C - - 0.9
Page 1 of 2 Rev. 02 : March 24, 2005
V
ns
nA
1--Reverse Recovery Time
VF
Trr
Forward Voltage Drop
IF = 15mA
IF = 1mA
Reverse Current IR
Test Condition
Reverse Breakdown Voltage V(BR)R IR = 10 µA
V
Parameter
VRRM
Repetitive Peak Reverse Voltage
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
0.150 (3.8)
max.
0.020 (0.52)max.
Dimensions in inches and ( millimeters )
1.00 (25.4)
min.
1.00 (25.4)
min.
Cathode
Mark