3SK228
GaAs Dual Gate MES FET
ADE-208-280
1st. Edition
Application
UHF TV tuner RF Amplifier
Outline
3SK228
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDS 12 V
Gate 1 to source voltage VG1S –6 V
Gate 2 to source voltage VG2S –6 V
Drain current ID50 mA
Channel power dissipation Pch 150 mW
Channel temperature Tch 125 °C
Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Drain to source cutoff current IDSX — — 50 µA VDS = 12 V, VG1S = –3 V,
VG2S = 0
Gate 1 to source breakdown
voltage V(BR)G1SS –6 — — V IG1 = –10 µA, VG2S = VDS = 0
Gate 2 to source breakdown
voltage V(BR)G2SS –6 — — V IG2 = –10 µA, VG1S = VDS = 0
Gate 1 cutoff current IG1SS — — –5 µA VG1S = –5 V, VG2S = VDS = 0
Gate 2 cutoff current IG2SS — — –5 µA VG2S = –5 V, VG1S = VDS = 0
Drain current IDSS 10 17 32 mA VDS = 5 V, VG1S = VG2S = 0
Gate 1 to source cutoff voltage VG1S(off) — –1.1 –1.5 V VDS = 5 V, VG2S = 0,
ID = 100 µA
Gate 2 to source cutoff voltage VG2S(off) — –1.1 –1.5 V VDS = 5 V, VG1S = 0,
ID = 100 µA
Forward transfer admittance |yfs| 20 34 — mS VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1 kHz
Input capacitance Ciss — 0.58 1.0 pF VDS = 5 V, VG1S = VG2S = –3 V,
f = 1 MHz
Output capacitance Coss — 0.36 0.6 pF
Reverse transfer capacitance Crss — 0.028 0.05 pF
Power gain PG 17 19.6 — dB VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 900 MHz
Noise figure NF — 1.3 2.0 dB
Note: Marking is “XR–”.
3SK228
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3SK228
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3SK228
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3SK228
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Power Gain, Noise Figure Test Circuit
3SK228
7
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any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
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examples described herein.
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or Hitachi, Ltd.
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Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products
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