V
RRM
= 100 V - 600 V
I
F
= 300 A
Features
• High Surge Capability DO-9 Package
• Types up to 600 V V
RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol S300B (R) S300D (R) S300E (R) S300G (R) Unit
Re
etitive
eak reverse
S300B thru S300JR
S300J (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Standard
Recover
Diode
Conditions
2. Reverse polarity (R): Stud is anode.
voltage
RRM
RMS reverse voltage V
RMS
70 140 212 280 V
DC blocking voltage V
DC
100 200 300 400 V
Continuous forward
current I
F
300 300 300 300 A
Operating temperature T
j
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Parameter Symbol S300B (R) S300D (R) S300E (R) S300G (R) Unit
Diode forward voltage 1.2 1.2 1.2 1.2
10 10 10 10 μA
12 12 12 12 mA
Thermal characteristics
Thermal resistance,
junction - case R
thJC
0.16 0.16 0.16 0.16 °C/W
A6850
V
R
= 100 V, T
j
= 25 °C
I
F
= 300 A, T
j
= 25 °C
T
C
≤ 130 °C
Conditions
6850 6850
300
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive
forward current, Half Sine
Wave
I
F,SM
Reverse current I
R
V
F
-55 to 150
S300J (R)
10
V
R
= 100 V, T
j
= 175 °C
0.16
1.2
12
V
-55 to 150
T
C
= 25 °C, t
p
= 8.3 ms 6850 6850
420
600
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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