2STF2280 Low voltage high performance PNP power transistor Preliminary data Features Low collector-emitter saturation voltage High current gain characteristic Fast switching speed 4 3 2 1 Applications DC-DC converter, voltage regulation General purpose switching equipment SOT-89 Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new "PB-HCD" (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Table 1. Device summary Order code Marking Package Packaging 2STF2280 2280 SOT-89 Tape and reel January 2010 Doc ID 16984 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/7 www.st.com 7 Electrical ratings 2STF2280 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Unit VCBO Collector-base voltage (IE = 0) -80 V VCEO Collector-emitter voltage (IB = 0) -80 V VEBO Emitter-base voltage (IC = 0) -5 V Collector current 2 A Collector peak current (tP < 5 ms) 4 A 0.5 A 1 A 1.4 W -65 to 150 C Value Unit 89 C/W IC ICM IB IBM Base current Base peak current (tP < 5 ms) PTOT Total dissipation at Tamb = 25C TJ Operating junction temperature TSTG Table 3. Storage temperature Thermal data Symbol RthJA (1) Parameter Thermal resistance junction-ambient 1. Device mounted on a PCB area of 1 cm. 2/7 Value Doc ID 16984 Rev 1 max 2STF2280 2 Electrical characteristics Electrical characteristics TCASE = 25 C unless otherwise specified. Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE = -80 V -500 A ICEO Collector cut-off current (IB = 0) VCE = -80 V -1 mA IEBO Emitter cut-off current (IC = 0) VEB = -5 V -100 A VCEO(sus) (1) Collector-emitter sustaining voltage (IB = 0) IC = -10 mA -80 VCE(sat) (1) Collector-emitter saturation voltage IC = -100 mA, IB = -10 mA IC = -1 A, IB = -100 mA -15 VBE(sat) (1) Base-emitter saturation voltage IC = -100 mA, IB = -10 mA IC = -1 A, IB = -100 mA DC current gain IC = -100 mA, VCE = -2 V IC = -500 mA, VCE = -2 V IC = -1 A, VCE = -2 V Transition frequency IC = -0.1 A, VCE = -10 V hFE (1) fT 140 100 80 V 190 50 -100 -250 mV mV -1 -1.1 V V 300 MHz 1. Pulse test: pulse duration 300 s, duty cycle 2 %. Doc ID 16984 Rev 1 3/7 Package mechanical data 3 2STF2280 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 4/7 Doc ID 16984 Rev 1 2STF2280 Package mechanical data SOT-89 mechanical data mm Dim. Min. A Typ. 1.40 Max. 1.60 B 0.44 0.56 B1 0.36 0.48 C 0.35 0.44 C1 0.35 0.44 D 4.40 4.60 D1 1.62 1.83 E 2.29 2.60 e 1.42 1.57 e1 2.92 3.07 H 3.94 4.25 K 1 8 L 0.89 1.20 R 0.25 7098166_C Doc ID 16984 Rev 1 5/7 Revision history 4 2STF2280 Revision history Table 5. 6/7 Document revision history Date Revision 14-Jan-2010 1 Changes Initial release. Doc ID 16984 Rev 1 2STF2280 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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