2STF2280 - STMICROELECTRONICS

Preliminary data

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

January 2010 Doc ID 16984 Rev 1 1/7

2STF2280

Low voltage high performance PNP power transistor

Features

■Low collector-emitter saturation voltage

■High current gain characteristic

■Fast switching speed

Applications

■DC-DC converter, voltage regulation

■General purpose switching equipment

Description

The device is a PNP transistor manufactured

using new “PB-HCD” (power bipolar high current

density) technology. The resulting transistor

shows exceptional high gain performances

coupled with very low saturation voltage.

Figure 1. Internal schematic diagram

SOT-89

Table 1. Device summary

Order code Marking Package Packaging

2STF2280 2280 SOT-89 Tape and reel

www.st.com

Electrical ratings 2STF2280

2/7 Doc ID 16984 Rev 1

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VCBO Collector-base voltage (IE = 0) -80 V

VCEO Collector-emitter voltage (IB = 0) -80 V

VEBO Emitter-base voltage (IC = 0) -5 V

ICCollector current 2 A

ICM Collector peak current (tP < 5 ms) 4 A

IBBase current 0.5 A

IBM Base peak current (tP < 5 ms) 1 A

PTOT Total dissipation at Tamb = 25°C 1.4 W

TJOperating junction temperature -65 to 150 °C

TSTG Storage temperature

Table 3. Thermal data

Symbol Parameter Value Unit

RthJA (1) Thermal resistance junction-ambient max 89 °C/W

1. Device mounted on a PCB area of 1 cm².

2STF2280 Electrical characteristics

Doc ID 16984 Rev 1 3/7

2 Electrical characteristics

TCASE = 25 °C unless otherwise specified.

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

ICES

Collector cut-off current

(VBE = 0) VCE = -80 V -500 µA

ICEO

Collector cut-off current

(IB = 0) VCE = -80 V -1 mA

IEBO Emitter cut-off current (IC = 0) VEB = -5 V -100 µA

VCEO(sus) (1) Collector-emitter sustaining

voltage (IB = 0) IC = -10 mA -80 V

VCE(sat) (1) Collector-emitter saturation

voltage

IC = -100 mA, IB = -10 mA

IC = -1 A, IB = -100 mA

-15 -100

-250

VBE(sat) (1) Base-emitter saturation

voltage

IC = -100 mA, IB = -10 mA

IC = -1 A, IB = -100 mA

-1

-1.1

hFE (1) DC current gain

IC = -100 mA, VCE = -2 V

IC = -500 mA, VCE = -2 V

IC = -1 A, VCE = -2 V

140

100

190 300

fTTransition frequency IC = -0.1 A, VCE = -10 V 50 MHz

1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.

Package mechanical data 2STF2280

4/7 Doc ID 16984 Rev 1

3 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK® is an ST trademark.

2STF2280 Package mechanical data

Doc ID 16984 Rev 1 5/7

SOT-89 mechanical data

Dim. mm

Min. Typ. Max.

A 1.40 1.60

B 0.44 0.56

B1 0.36 0.48

C 0.35 0.44

C1 0.35 0.44

D 4.40 4.60

D1 1.62 1.83

E2.292.60

e 1.42 1.57

e1 2.92 3.07

H3.94 4.25

K1° 8°

L0.89 1.20

R0.25

7098166_C

Revision history 2STF2280

6/7 Doc ID 16984 Rev 1

4 Revision history

Table 5. Document revision history

Date Revision Changes

14-Jan-2010 1 Initial release.

2STF2280

Doc ID 16984 Rev 1 7/7

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