2N3442 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

 



NPN silicon power transistor designed for applications in industrial and commercial

equipment including high fidelity audio amplifiers, series and shunt regulators and

power switches.

•Collector –Emitter Sustaining Voltage —

VCEO(sus) = 140 Vdc (Min)

•Excellent Second Breakdown Capability

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎ

Value

ÎÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎÎ

140

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎÎ

VCB

ÎÎÎÎÎÎÎ

160

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

7.0

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Collector Current — Peak

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

15**

ÎÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

Peak

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

7.0

—

ÎÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

117

0.67

ÎÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎ

Max

ÎÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎ

1.5

ÎÎÎÎÎ

C/W

*Indicates JEDEC Registered Data.

**This data guaranteed in addition to JEDEC registered data.



SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N3442/D

 Motorola, Inc. 1995



10 AMPERE

POWER TRANSISTOR

NPN SILICON

140 VOLTS

117 WATTS

CASE 1–07

TO–204AA

(TO–3)

REV 7

2N3442

2Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 200 mAdc, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

140

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 140 Vdc, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

200

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150

ÎÎÎÎ

ICEX

ÎÎÎÎ

—

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 7.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 3.0 Adc, VCE = 4.0 Vdc)

(IC = 10 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

7.5

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 10 Adc, IB = 2.0 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 10 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

5.7

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (2)

(IC = 2.0 Adc, VCE = 4.0 Vdc, ftest = 40 kHz)

ÎÎÎÎ

—

ÎÎÎ

kHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

ÎÎÎ

—

*Indicates JEDEC Registered Data.

NOTES:

1. Pulse Test: Pulse Width = 300 µs, Duty Cycle

2.0%.

2. fT = |hfe| • ftest

1.0

00 25 50 75 100 125 150 175 200

Figure 1. Power Derating

TC, CASE TEMPERATURE (

/PD(MAX), POWER DISSIPATION (NORMALIZED)

0.8

0.6

0.4

0.2

2N3442

Motorola Bipolar Power Transistor Device Data

ACTIVE REGION SAFE OPERATING AREA INFORMATION

There are two limitations on the power–handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to

greater dissipation than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 200

C; TC is

variable depending on conditions. At high case temper-

atures, thermal limitations will reduce the power that can be

handled to values less than the limitations imposed by

second breakdown.

2.0

Figure 2. 2N3442

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

7.0

5.0

3.0

2.0

1.0

0.7

0.2 5.0 20 100 200

IC, COLLECTOR CURRENT (AMP)

CURRENT LIMIT

THERMAL LIMIT @ TC = 25

SINGLE PULSE

SECOND BREAKDOWN LIMIT

1.0 ms

0.5

0.3

3.0 7.0 10 30 50 70

100

TJ = 200

100 ms

VCE, COLLECTOR–EMITTER VOLTAGE (VOL

TS)

400

0.1

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

4.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10

100

hFE, DC CURRENT GAIN

TJ = 150

C–55

VCE = 4.0 V

6.0

200

7.0

Figure 4. Collector–Saturation Region

1.4

2.0 IB, BASE CURRENT (mA)

05.0 10 20 50 100 200 500 1.0 k 2.0 k

1.0

0.8

0.6

0.4

IC = 1.0 A

TJ = 25

4.0 A 8.0 A

1.2

0.2

2.0 A

2N3442

4Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

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2N3442/D

*2N3442/D*

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