TIP30 TIP3UA TIF oUbD TIFovwv | THE TIP29 SERIES (NPN) AND TIP 30 SERIES (PNP) ARE COMPLEMENTARY SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR POWER AMPLIFIERS AND SWITCHING APPLICATIONS. COMPLEMENTARY SILICON EPITAXIAL-BASE POWEH TRANSISTORS RO SLECTRONICS CASE T0-220B * Pulse Test :; MICRO ELECTRONICS LTD. Pulse Width=0.3mS, Duty Cycle=1% 38 HUNG TO ROAD, KWUN TONG, HONG KONG. BCE TIP29 TIP29A PIP29B TIP29C ABSOLUTE MAXIMUM RATINGS For p-n-p devices, voltage and current values are negative. , TIP30 TIP3OA TIP30B TIP3O Collector-Base Voltage VcBo 40V 60V sov. 100V Collector-Emitter Voltage VCEO 40V 60V soy 100V Emitter-Base Voltage VEBO 5V 5V 5V 5V Collector Current Ic 1A 1A 1A 1A Collector Peak Current Icom 3A 3A 3A 3A Base Current IB 0.4A Total Power Dissipation @ TG 25C Peot 30W @ Ta 25C aw Operating Junction & Storage Temperature Tj, Tstg -65 to 150C THERMAL RESISTANCE Junction to Case Ojc 4.17C/W = max. Junction to Ambeient Oja 62.5C/W max. ELECTRICAL CHARACTERISTICS (Ta=25C) TIP29 |TIP29A | TIP29B PARAMETER SYMBOL TIP30 |TIP30A |TIP30B |UNIT| TEST CONDITIONS : MIN MAX|MIN MAX|MIN MAX : Collector-Emitter Breakdown Voltage | LVcgo* | 40 60 80 V | Ic=30mA Ip-0 Collector Cutoff Current ICEO 0.3 0.3 mA | VcE=30V Ip-0 ! 0.3| wA | VcE=60V Ine0 | Collector Cutoff Current IcES 0.2 mA | VCE=40V VpE=0 ; 0.2 mA | VcE=60V VBE-O | 0.2] mA | VcoE=80V Vpp=0 | Enitter Cutoff Current IEBO 1 mA | Vep=5V IccO 5 Collector-Emitter Saturation Voltage Vck(sat)* 0.7 . . V Ic=lA Tp-125mA Base-Emitter Voltage VBE * 1.3 23] V | IcslA Von=4v | 1 D.C. Current Gain Hre 40 40 40 Ic=0.2A VCE=4V | 15 75) 15 75 15 75 Ic=1A Vebe4V Small Signal Current Gain bfe 20 20 20 Ic=0.2A VCE=10V f=1lkiz |Current Gain-Bandwidth Product fr 3 3 3 MHz} IC=0.2A VCE=10V J L f=1MHz TIP30C same as TIP30B, except LVCEO. TELEX 43510 KWUN TONG P. 0. BOX69477 CABLE ADDRESS MICROTRON TELEPHONE:- 3-430181-6, 3893363 3-692423-~ . 1]. pe P re FAX: 3~410321