Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
100% Avalanche Test BVDSS 650V
Fast Switching Characteristic RDS(ON) 8Ω
Simple Drive Requirement ID2A
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25Continuous Drain Current, VGS @ 10V A
ID@TC=100Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25Total Power Dissipation W
W/
EAS Single Pulse Avalanche Energy2mJ
IAR Avalanche Current A
EAR Repetitive Avalanche Energy mJ
TSTG
TJOperating Junction Temperature Range
Thermal Data
Symbol Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 5.7 /W
Rthj-a Maximum Thermal Resistance, Junction-ambient 62 /W
Data & specifications subject to change without notice 1
200806053
RoHS-compliant Product
Storage Temperature Range -55 to 150
3.6
22
Linear Derating Factor 0.176
2
1.26
Parameter Rating
650
AP02N60I-A
80
-55 to 150
Parameter
2
2
± 30
GDSTO-220CFM(I)
The TO-220CFM package is widely preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies, AC-DC converters and high current high speed switching
circuits.
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 650 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.6 - V/
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A - - 8 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=20V, ID=1A - 0.2 - S
IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=--
nA
QgTotal Gate Charge3ID=2A - 14 - nC
Qgs Gate-Source Charge VDS=480V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 8.5 - nC
td(on) Turn-on Delay Time3VDS=300V - 9.5 - ns
trRise Time ID=2A - 12 - ns
td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 21 - ns
tfFall Time RD=150Ω-9-
ns
Ciss Input Capacitance VGS=0V - 155 - pF
Coss Output Capacitance VDS=25V - 27 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 14 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 2 A
ISM Pulsed Source Current ( Body Diode )1- - 3.6 A
VSD Forward On Voltage3Tj=25, IS=2A, VGS=0V - - 1.5 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=40mH , RG=25Ω , IAS=2A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP02N60I-A
± 30V ±100
AP02N60I-
A
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
0.8
0.9
1.0
1.1
1.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
VG=10V
I
D=1A
0.0
0.5
1.0
1.5
0 5 10 15 20
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC
10V
6.0V
5.5V
5.0V
VG=4.5V
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0 5 10 15 20
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC 10V
5.5V
6.0V
5.0V
VG=4.5V
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-50 0 50 100 150
Tj , Junction Temperature ( o C )
VGS(th) (V)
0.01
0.1
1
10
0.01 0.21 0.41 0.61 0.81 1.01 1.21
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj=25oCTj=150oC
3
AP02N60I-
A
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Thermal Response (Rthjc)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
4
8
12
16
0 4 8 121620
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
ID=2A VDS =320V
VDS =400V
VDS =480V
10
100
1000
1 5 9 1317212529
VDS ,Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
0.01
0.10
1.00
10.00
1 10 100 1000 10000
VDS ,Drain-to-Source Voltage (V)
ID (A)
TC=25oC
Single Pulse
10us
1ms
10ms
100ms
4
Package Outline : TO-220CFM
Millimeters
MIN NOM MAX
A4.30 4.70 4.90
A1 2.30 2.65 3.00
b0.50 0.70 0.90
b1 0.95 1.20 1.50
c0.45 0.65 0.80
c2 2.30 2.60 2.90
E9.70 10.00 10.40
L12.50 13.00 13.50
L3 2.91 3.41 3.91
L4 14.70 15.40 16.10
φ---- 3.20 ----
e---- 2.54 ----
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-220CFM
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
02N60I
Part Numbe
r
LOGO
Option
A
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
YWWSSS
Package Code
LOGO
A1
A
c
E
φ
b
b1
e
L4
c2
A1
A
c
E
φ
b
b1
e
L4
c2
L3
L
5