Parameter Test Conditions Symbol Min Typ** Max Unit
EMITTER (IF= 10 mA) VF1.18 1.50 V
Input Forward Voltage
Reverse Leakage Current (VR= 6.0 V) IR0.001 10 µA
DETECTOR (IC= 1.0 mA, IF= 0) BVCEO 30 100 V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage (IC= 100 µA, IF= 0) BVCBO 70 120 V
Emitter-Collector Breakdown Voltage (IE= 100 µA, IF= 0) BVECO 710 V
Collector-Emitter Dark Current (VCE = 10 V, IF= 0) ICEO 1 50 nA
Collector-Base Dark Current (VCB = 10 V) ICBO 20 nA
Capacitance (VCE = 0 V, f = 1 MHz) CCE 8pF
INDIVIDUAL COMPONENT CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA= 25°CUnless otherwise specified.)
Characteristic Test Conditions Symbol Min Typ** Max Units
Input-Output Isolation Voltage(Non-’M’, Black Package) (f = 60 Hz, t = 1 min) VISO
5300 Vac(rms)*
(‘-M’, White Package) (f = 60 Hz, t = 1 sec) 7500 Vac(pk)
Isolation Resistance (VI-O = 500 VDC) RISO 1011 1
Isolation Capacitance (VI-O = , f = 1 MHz) CISO
0.5 pF
(‘-M’ White Package) 0.2 2 pF
ISOLATION CHARACTERISTICS
Note
* 5300 Vac(rms) for 1 minute equates to approximately 9000 Vac (pk) for 1 second
** Typical values at TA= 25°C
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4N25 4N26 4N27 4N28 4N35 4N36
4N37 H11A1 H11A2 H11A3 H11A4 H11A5
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS