electronics inc. MICROWAVE VARACTOR DIODES ecisco-acisi4 ABRUPT - HYPERABRUPT acirezaci77 (GC Series) (GIGA-CAP HA Series) MV1858-MV1670 ELECTRICAL CHARACTERISTICS (Ta= 25C unless otherwise noted) emerge frgeiaown va 30 Vie @ ip + 10 vAde 45 Vide @ 1p = 10 ude 60 Vee @ 1p = 10 uAde | Reverse Voltage ' 002 vac @V_ 7 Vee DOI WAR OV, = 40ver | 0.02 vAe @ Va + 58 Vac Leekage Current (mex) a 2.0 unde OV, 7 Vee tTA 175%Cr 20 vAde @V_ 40 Var (FA = 128C) 20 vad OV, 56 Vert, - 175i] Mua O VR SS Va ITA 150C) Seance, Fermeerature Toc 300 ppm/PC @ Vp = 4 Vdc, 1 = 1 MHz 200 pom/PC @ V_ = 4 Vdc, f= 1 MHz Olode Cap. (C1)* Type [CosC30| ase Type Cosc30} Q4@ Type coscas] Q4G Type |Cosc6a] Qa @ Type [C4/C60/ Q4e@ tigs @ 4/1 MHz No. AATIO] 50 MHz No, RATIO [50 MeHz| No, RATIO[SO MHz No, RATIOIS0 MHz No. RATIO 1 OOMHe} pt Min min min min min min min min Mane Tver min os GC1s00| 3.3:1 3600 Slight GCi6ee| 4.2:1 2000 1.0 Gc1se1| 3.4:1 | 3600 Hy perabrupt Gcteot| 4.4:1 | 2000 imviese'! 2.1/2.3] 350 12 @crsoz| 34:1 | 3600 | Hatz02) S.0:1 | 1200 | ac1602| 4.5:1 | 2000 | Gc1702| 5.0:1 | 1200 LP GCiS03/ 3.5:1 3400 | HAI703| 5.3:1 41200 | GC1603/ 4.8:1 2000 | GC1703/ 5.3:1 1200 1.0 @C1s0e] 35:1 | 3300 [Harvoa! 5.5:1 | 1200 | Gci04| 4.9:1 [| 2000 | Gct704] 5.5:1 | 1200 22 @C1S0S) 37:1 3300 | HA170$/ 5.8:1 1200 | GC1605 | 5.0:1 2000 | GcC1703] 5.8:1 1206 mv 18607} 2.5/2.7 350 27 Gc1s06] 3.7:1 |] 3100 | Hat706) 5.9:1 | 1100 | act60s| 5.2:1 | 1800 | aci7es| 5.9:1 | 1100 3,3 GCts07} 3.8:1 3000 | HAI7A7/ 6.0:1 1100 | GC1607{ 5.3:1 3800 [| Gct7o7] 6.0:1 MV1I962 | 2.6/2.8 300 2.9 GC1S08] 3.9:1 2600 | HAI708/ 6.0:1 1050 | GC1608| 5.4:1 1800 [| GC1708/ 6.0:1 1050 a? GC1S09/ 3.9:1 2500 | HA1708/ 6.5:1 1050 7 GC1609 | 5.4:1 1800 [| GC1709} 6.5:1 1050 [MV1S63 | 2.6/2.8 300 ss GC1S10] 4.0:1 | 2500 | #aAN710/ 65:1 | 1050 GC1710] 65:1 | 1050 63 @ctsti| 4.0:1 2200 | HAITII} 6.5:1 1000 GCt711} 65:1 1000 [MV1864 | 2.7/2.9 300 0.2 GCtSt2/ 40:1 | 2000 | HatzI2{| 7.0:1 | 1000 GC1712| 7.0:1 | 1000 2.7/2.9] 300 10.0 GCtSst3| 4.2:1 | 2000 | #at7t3| 7.0:1 950 GC1713] 7.0:1 950 2.8/3.0] 250 120 @cis1s| 4.2:1 | 1600 | Harzt4| 7.0:1 900 GCt714] 7.0:1 900 2.8/3.0] 200 18.0 waAt718| 7.0:1,| 4850 GCt718| 7.0:1 850 Jmvis70 [2.8/3.0| 200 18.0 HAt716] 7.0:1 850 GCI716} 7.0:1 850 22.0 HAI7I7] 7.0:1 350 GCI] 7.0:1 850 * To order devices with closer tolerances, QQ) Cy = 230% specify t 5% ort 2% after type no. and suffix. (2) Cy + 20% TO ORDER ~- SELECT CASE STYLE AS DESIGNATED BY LETTER BELOW AND ADO TO TYPE NO. PACKAGE DESIGNATIONS * CHARACTERISTICS CASE A CASE B CASE DO CASE E CASE H h Series Inductance* = Lg = 0.5 nh (typ) Pa ae TET Case Capacitance** Cc = 0:15 pf (typ) AA T + t-- I~ CATHODE ta eB Le : *@ t= self resonant frequency | | ** @f= 1 MHz (except Case A, where) 4 JcATHODE ane (Cg = 0.2 pt (typ) op | CASE T NOTE: 3 os sgverern- Circuit Capacitance of EE types is % that for the individual type. Consists of a single CASE E with the ribbon leads .003"' X .080" XxX yr . CASE EE 2 (min) welded as shown. CASE F ba Consist of a single CASE E with the ribbon leads welded and formed as shown for low profile mounting on a PC board or other substrate. Consists of 2 CASE E varactors, back-to-back with anodes common, - with 3 leads welded as shown to provide a flat, low profie for mounting on a PC board or other substrate. Each tead 1s gold plated kovar, .003" thick X .080" wide X 42 minimum length. Other case styles and other back-to-back configurations including common cathode are available; please consult factory. ni U MANUFACTURED BY electronics inc. 68