IGBT MODULE Spec.No.IGBT-SP-03007 R7 MBN1200E17D Silicon N-channel IGBT OUTLINE DRAWING FEATURES High speed, low loss IGBT module. Low driving power due to low input capacitance MOS gate. Low noise due to ultra soft fast recovery diode. High reliability, high durability module. High thermal fatigue durability. (delta Tc=70C, N>30,000cycles) Isolated heat sink (terminal to base). Unit in mm CIRCUIT DIAGRAM C C C E E G E Weight: 900(g) o ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Symbol Collector Emitter Voltage Gate Emitter Voltage VCES VGES DC IC Collector Current 1ms ICp DC IF Forward Current 1ms IFM Junction Temperature Tj Storage Temperature Tstg Isolation Voltage VISO Terminals (M4/M8) Screw Torque Mounting (M6) Notes: (1) Recommended Value 1.80.2/91N*m Unit MBN1200E17D V V 1,700 20 1,200 A 2,400 1,200 A 2,400 o C -40 ~ +125 o C -40 ~ +125 VRMS 4,000(AC 1 minute) 2/10 (1) N*m 6 (2) (2) Recommended Value 5.50.5N*m ELECTRICAL CHARACTERISTICS Item Symbol Unit Min. Typ. Max. Test Conditions o 10 VCE=1,700V, VGE=0V, Tj=25 C Collector Emitter Cut-Off Current I CES mA o 10 35 VCE=1,700V, VGE=0V, Tj=125 C o Gate Emitter Leakage Current IGES nA -500 +500 VGE=20V, VCE=0V, Tj=25 C o Collector Emitter Saturation Voltage VCE(sat) V 2.0 2.7 3.3 IC=1,200A, VGE=15V, Tj=125 C o Gate Emitter Threshold Voltage VGE(TO) V 5.0 6.5 8.0 VCE=10V, IC=120mA, Tj=25 C o Input Capacitance Cies nF 100 VCE=10V, VGE=0V, f=100kHz, Tj=25 C o Internal Gate Resistance Rge 0.8 VCE=10V, VGE=0V, f=100kHz, Tj=25 C Rise Time tr 0.6 1.0 VCC=900V, Ic=1,200A Turn On Time ton 0.9 1.8 L=65nH,CGE=120nF(TBD) (3) Switching Times s Fall Time tf 0.3 0.7 RG=1.5(TBD) (3) o Turn Off Time toff 1.4 3.4 VGE=15V, Tj=125 C o Peak Forward Voltage Drop VFM V 1.3 1.9 2.5 IF=1,200A, VGE=0V, Tj=125 C Reverse Recovery Time trr s 0.5 1.0 VCC=900V, Ic=IF=1,200A Turn On Loss Eon(10%) J/P 0.09 0.25 0.4 L=65nH,CGE=120nF(TBD) (3) Turn Off Loss Eoff(10%) J/P 0.18 0.35 0.5 RG=1.5(TBD) (3) o Reverse Recovery Loss Err(10%) J/P 0.18 0.4 0.6 VGE=15V, Tj=125 C Stray inductance module LSCE nH 18 IGBT Rth(j-c) 0.018 Thermal Impedance K/W Junction to case FWD Rth(j-c) 0.030 Contact Thermal Impedance Rth(c-f) K/W 0.008 Case to fin Notes:(3) RG and CGE value is the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG and CGE value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. http://store.iiic.cc/ P1 IGBT MODULE Spec.No.IGBT-SP-03007 R7 MBN1200E17D DEFINITION OF TEST CIRCUIT Ls LLOAD Vcc Rg G/D Cge Fig.1 Switching test circuit Ic Vce Ls= VL t 0 VL dIc d t=tL ( ) tL Fig.2 Definition of stray inductance Ic Ic Vce 90% Vce Vce 0.1Vce 90% Irm 0 0 t Vge 10% t1 10% 10% 10% t tr ton t3 t4 t2 0 0 10% 90% t5 t7 t8 trr IF -Ic t6 t9 t8 IcVce dt Eoff(10%)= IcVce dt Err(10%)= Eoff(Full)= IcVce dt t5 Fig.3 Definition of switching loss http://store.iiic.cc/ t12 t10 IFVce dt t11 t6 IcVce dt t11 t12 t7 t2 t1 t tf toff t3 Eon(Full)= t t Vge t4 Eon(10%)= 0.5Irm 0.1IF 0 t10 Err(Full)= IFVce dt t9 P2 IGBT MODULE Spec.No.IGBT-SP-03007 R7 P3 MBN1200E17D 1. STATIC CHARACTERISTICS TYPICAL Tc=25 TYPICAL 11V VGE=15V 13V 2000 Tc=125 1800 1800 1600 1600 1400 1400 1200 1000 800 9V Collector Current IC (A) Collector Current IC (A) 2000 VGE=15V 13V 11V 1200 1000 800 600 600 400 400 200 200 9V 7V 7V 0 0 0 1 2 3 4 0 5 Collector-Emitter Voltage VCE (V) Collector Current vs.Collector to Emitter Voltage Tj=25 Tj=125 1800 1600 Forward Current IF(A) 1400 1200 1000 800 600 400 200 0 0.0 0.5 1.0 1.5 Forward Voltage 2.0 2.5 2 3 4 5 Collector Current vs.Collector to Emitter Voltage TYPICAL 2000 1 Collector-Emitter Voltage VCE (V) 3.0 VF(V) Forward Voltage of free-wheeling diode http://store.iiic.cc/ IGBT MODULE Spec.No.IGBT-SP-03007 R7 MBN1200E17D 2. DYNAMIC CHARACTERISTICS TYPICAL TYPICAL 0.5 1.0 Conditions Conditions V CE Tc=125 Tc=125 Vcc=900V Vcc=900V 0 10% 10% V GE t1 t3 Eon(10%)= t4 t1 Turn-on Loss Eon (J/pulse) IC CE t3 t2 C 0.8 dt IC V CE 10% L=65nH 0 R =1.5 0 G CGE=120nF V G=15V t4 t2 V Eon(full)= I V Inductive Load 10% t V GE t5 t7 Inductive Load CE dt Eoff(full)= Eon(Full) 0.3 Eon(10%) 0.2 0.6 0.4 0.1 t8 t6 t8 Eoff(10%)= Eoff (J/pulse) 0 R Turn-off Loss L=65nH G=1.5 CGE=120nF V G =15V 0.4 Conditions Conditions IC IC t7 t6 IC t5 Eoff(Full) Eoff(10%) 0.2 0.0 0.0 0 500 1000 Collector Current 1500 0 Ic (A) 500 Collector Current Turn-on Loss vs. Collector Current 1000 1500 Ic (A) Turn-off Loss vs. Collector Current TYPICAL TYPICAL 1.0 3.0 Conditions Conditions 0.1V CE Tc=125 Vcc=900V Tc=125 Vcc=900V 0.1IF L=65nH t G=1.5 GE=120nF V G=15V R R IF -IC t12 t9 Inductive Load Err(10%)= Err(full)= t11 IC t11 t10 t9 C V t10 V I V t12 CE dt CE dt G=1.5 GE=120nF G=15V C 2.5 Inductive Load Switching Time ton,tr,toff,tf,trr ( s ) C 0.8 Conditions Conditions V CE IRM 0 L=65nH Reverse Recovery Loss Err (J/pulse) VCE dt VCE dt 0.6 Err(full) 0.4 Err(10%) 2.0 1.5 toff 1.0 ton tr trr 0.2 0.5 tf 0.0 0.0 0 500 Forward Current 1000 1500 0 500 Collector Current IF (A) Recovery Loss vs. Forward Current http://store.iiic.cc/ 1000 IC (A) Switching Time vs. Collector Current 1500 P4 IGBT MODULE Spec.No.IGBT-SP-03007 R7 MBN1200E17D TYPICAL TYPICAL 1.0 1.0 Conditions Conditions Conditions Conditions Tc= 1 25 V CE Tc= 1 25 Vcc =9 0 0V Vcc =9 0 0V C I = 12 00 A 10% C L= 65 nH Eon(Full) GE=1 2 0n F V G= 1 5V C 0.8 IC I = 12 00 A 0 L= 65 nH 0 10% t V GE GE=1 2 0n F G C Indu ctive Load V = 1 5V 0.8 t5 t7 Indu ctive Load t8 t6 Eoff(10%)= t8 IC t7 VCE dt t6 Turn-off Loss Eoff (J/pulse) Turn-on Loss Eon (J/pulse) Eoff(full)= 0.6 0.4 IC V CE Eon(10%) Eon(full)= 0.4 Eoff(10%) t4 t2 t4 VCE dt VCE dt IC t3 t2 IC t1 0.0 2 Eoff(Full) 0.2 Eon(10%)= 1 0.6 V GE 0 t1 t3 0 3 Gate Resistance RG ( ) 4 5 0.0 TYPICAL 0.1V CE Tc=1 25 0 C 0.1IF t IF -IC GE=120 nF G C Err (J/pulse) Reverse Recovery Loss Inductive Load t12 t9 V =15V 0.8 V CE IRM I =1 200A L=65nH Err(10%)= Err(full)= t11 t10 VCE dt IC VCE dt t12 IC t11 t10 t9 0.6 0.4 Err(10%) Err(Full) 0.2 0.0 0 1 2 Gate Resistance 3 1 2 ) 4 3 ) 4 RG ( Turn-off Loss vs. Gate Resistance 1.0 Conditions Conditions 0 Gate Resistance Turn-on Loss vs. Gate Resistance Vcc=900 V t5 VCE dt 10% 10% 0 0.2 IC 5 RG ( Recovery Loss vs. Gate Resistance http://store.iiic.cc/ 5 P5 IGBT MODULE Spec.No.IGBT-SP-03007 R7 MBN1200E17D 3. TRANSIENT THERMAL IMPEDANCE Transient thermal impedance Rth(j-c)(K/W) 0.1 FWD IGBT 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Time t(s) Transient Thermal Impedance Curve (Maximum Value) 4. Negative environmental impact material Please note that following materials are contained in the product In order to keep characteristics and reliability level. Material Contained part Lead (Pb) and its compounds Solder Arsenic and its compounds Si chip http://store.iiic.cc/ P6 IGBT MODULE Spec.No.IGBT-SP-03007 R7 P7 MBN1200E17D HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. 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