IGBT MODULE Spec.No.IGBT-SP-03007 R7
P1
MBN1200E17D
Silicon N-channel IGBT
FEATURES
∗ High speed, low loss IGBT module.
∗ Low driving power due to low input
capacitance MOS gate.
∗ Low noise due to ultra soft fast recovery diode.
∗ High reliability, high durability module.
∗ High thermal fatigue durability.
(delta Tc=70°C, N>30,000cycles)
∗ Isolated heat sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25
oC
)
Item Symbol Unit MBN1200E17D
Collector Emitter Voltage V
CES
V 1,700
Gate Emitter Voltage V
GES
V ±20
DC I
C
1,200
Collector Current 1ms I
Cp
A 2,400
DC I
F
1,200
Forward Current 1ms I
FM
A 2,400
Junction Temperature T
j
o
C -40 ~ +125
Storage Temperature T
stg
o
C -40 ~ +125
Isolation Voltage V
ISO
V
RMS
4,000(AC 1 minute)
Terminals
(M4/M8)
- 2/10 (1)
Screw Torque Mounting
(M6)
- N·m 6 (2)
Notes: (1) Recommended Value 1.8±0.2/9±1N·m (2) Recommended Value 5.5±0.5N·m
ELECTRICAL CHARACTERISTICS
Item Symbol
Unit
Min.
Typ.
Max.
Test Conditions
- - 10 V
CE
=1,700V, V
GE
=0V, Tj=25
o
C
Collector Emitter Cut-Off Current I
CES
mA - 10 35 V
CE
=1,700V, V
GE
=0V, Tj=125
o
C
Gate Emitter Leakage Current I
GES
nA -500
- +500
V
GE
=±20V, V
CE
=0V, Tj=25
o
C
Collector Emitter Saturation Voltage V
CE(sat)
V 2.0 2.7 3.3 I
C
=1,200A, V
GE
=15V, Tj=125
o
C
Gate Emitter Threshold Voltage V
GE(TO)
V 5.0 6.5 8.0 V
CE
=10V, I
C
=120mA, Tj=25
o
C
Input Capacitance C
ies
nF - 100
- V
CE
=10V, V
GE
=0V, f=100kHz, Tj=25
o
C
Internal Gate Resistance Rge Ω - 0.8 - V
CE
=10V, V
GE
=0V, f=100kHz, Tj=25
o
C
Rise Time t
r
- 0.6 1.0
Turn On Time
t
on
- 0.9 1.8
Fall Time t
f
- 0.3 0.7
Switching Times
Turn Off Time t
off
µs
- 1.4 3.4
V
CC
=900V, Ic=1,200A
L=65nH,C
GE
=120nF(TBD) (3)
R
G
=1.5Ω(TBD) (3)
V
GE
=±15V, Tj=125
o
C
Peak Forward Voltage Drop V
FM
V 1.3 1.9 2.5 IF=1,200A, V
GE
=0V, Tj=125
o
C
Reverse Recovery Time t
rr
µs - 0.5 1.0
Turn On Loss E
on(10%)
J/P 0.09
0.25
0.4
Turn Off Loss E
off(10%)
J/P 0.18
0.35
0.5
Reverse Recovery Loss E
rr(10%)
J/P 0.18
0.4 0.6
V
CC
=900V, Ic=IF=1,200A
L=65nH,C
GE
=120nF(TBD) (3)
R
G
=1.5Ω(TBD) (3)
V
GE
=±15V, Tj=125
o
C
Stray inductance module L
SCE
nH - 18 -
IGBT Rth(j-c)
- - 0.018
Thermal Impedance
FWD Rth(j-c)
K/W
- - 0.030
Junction to case
Contact Thermal Impedance
Rth(c-f)
K/W
- 0.008
- Case to fin
Notes:(3) R
G
and C
GE
value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable R
G
and C
GE
value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
CIRCUIT DIAGRAM
OUTLINE DRAWING
Unit in mm
Weight: 900(g)
E E
E
G
C C C
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IGBT MODULE Spec.No.IGBT-SP-03007 R7
P2
MBN1200E17D
DEFINITION OF TEST CIRCUIT
Fig.2 Definition of stray inductance
Fig.1 Switching test circuit
Fig.3 Definition of switching loss
t4
t3
Ic
ton
tr
Vge
10%
10%
10%
90%
Vce
t
0
t
0
t1
t2
Eon(10%)=
∫
Ic
･
Vce dt
t4
t3
Eon(Full)=
∫
Ic
･
Vce dt
t2
t1
t5
90%
90%
Vge
Vce
Ic
10%
10%
toff
tf
t8
t7
t0
t0
t6
Eoff(10%)=
∫
Ic
･
Vce dt
t8
t7
Eoff(Full)=
∫
Ic
･
Vce dt
t6
t5
t12
t11
Err(10%)=
∫
IF
･
Vce dt
Err(Full)=
∫
IF
･
Vce dt
t10
t9
0.1IF
t9
t10
Vce
0.1Vce
0.5Irm
Irm
-Ic
trr
t12
t11
t
0
IF
Ic
t
0
VL
tL
Vce
t=t
L
Ls=
V
L
dIc
d
ｔ
( )
Vcc
Ls
L
LOAD
Rg
Cge
G/D
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IGBT MODULE Spec.No.IGBT-SP-03007 R7
P3
MBN1200E17D
1. STATIC CHARACTERISTICS
Collector Current vs.Collector to Emitter Voltage
TYPICAL
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 1 2 3 4 5
Collector-Emitter Voltage VCE (V)
Collector Current IC (A)
Tc=25
℃
7V
9V
VGE=15V 13V 11V
0
200
400
600
800
1000
1200
1400
1600
1800
2000
012345
Collector-Emitter Voltage VCE (V)
Collector Current IC (A)
Tc=125℃
9V
7V
11V
Collector Current vs.Collector to Emitter Voltage
TYPICAL
VGE=15V 13V
Forward Voltage of free-wheeling diode
TYPICAL
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Forward Voltage VF(V)
Forward Current IF(A)
Tj=25℃
Tj=25℃Tj=25℃
Tj=25℃ Tj=125℃
Tj=125℃Tj=125℃
Tj=125℃
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IGBT MODULE Spec.No.IGBT-SP-03007 R7
P4
MBN1200E17D
2. DYNAMIC CHARACTERISTICS
0.0
0.1
0.2
0.3
0.4
0.5
0 500 1000 1500
Collector Current Ic (A)
Turn-on Loss Eon (J/pulse)
Turn-on Loss vs. Collector Current
TYPICAL
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
L=65nH
L=65nH L=65nH
L=65nH
R
R R
R
G
GG
G
=1.5Ω
=1.5Ω=1.5Ω
=1.5Ω
C
C C
C
GE
GEGE
GE
=120nF
=120nF=120nF
=120nF
V
V V
V
G
GG
G
=±15V
=±15V=±15V
=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
I
C
V
GE
10%
10%
V
CE
0
0
t1 t3 t4 t2
Eon(10%)=
∫
I
C
・
V
CE
dt
Eon(full)=
∫
I
C
・
V
CE
dt
t4
t2
t3
t1
Eon(Full)
Eon(10%)
0.0
0.2
0.4
0.6
0.8
1.0
0 500 1000 1500
Collector Current Ic (A)
Turn-off Loss Eoff (J/pulse)
Turn-off Loss vs. Collector Current
TYPICAL
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
L=65nH
L=65nH L=65nH
L=65nH
R
R R
R
G
GG
G
=1.5Ω
=1.5Ω=1.5Ω
=1.5Ω
C
C C
C
GE
GEGE
GE
=120nF
=120nF=120nF
=120nF
V
V V
V
G
GG
G
=±15V
=±15V=±15V
=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
Eoff(10%)=
∫
I
C
・
V
CE
dt
Eoff(full)=
∫
I
C
・
V
CE
dt
t8
t6
t7
t5
V
GE
V
CE
I
C
10%
10%
t8t7
t
0
0
t5 t6
Eoff(Full)
Eoff(10%)
0.0
0.2
0.4
0.6
0.8
1.0
0 500 1000 1500
Forward Current IF (A)
Reverse Recovery Loss Err (J/pulse)
Recovery Loss vs. Forward Current
TYPICAL
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
L=65nH
L=65nH L=65nH
L=65nH
R
R R
R
G
GG
G
=1.5Ω
=1.5Ω=1.5Ω
=1.5Ω
C
C C
C
GE
GEGE
GE
=120nF
=120nF=120nF
=120nF
V
V V
V
G
GG
G
=±15V
=±15V=±15V
=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
Err(10%)=
∫
I
C
・
V
CE
dt
Err(full)=
∫
I
C
・
V
CE
dt
t12
t10
t11
t9
V
CE
0.1V
CE
0.1I
F
I
RM
-I
C
t10t11
t
0
t12
t9
I
F
Err(full)
Err(10%)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 500 1000 1500
Collector Current I
C
(A)
Switching Time ton,tr,toff,tf,trr ( µ
µ
µ
µs )
Switching Time vs. Collector Current
TYPICAL
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
L=65nH
L=65nH L=65nH
L=65nH
R
R R
R
G
GG
G
=1.5Ω
=1.5Ω=1.5Ω
=1.5Ω
C
C C
C
GE
GEGE
GE
=120nF
=120nF=120nF
=120nF
V
V V
V
G
GG
G
=±15V
=±15V=±15V
=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
tf
toff
ton
trr
tr
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IGBT MODULE Spec.No.IGBT-SP-03007 R7
P5
MBN1200E17D
0.0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5
Gate Resistance R
G
(
Ω
ΩΩ
Ω
)
Turn-on Loss Eon (J/pulse)
Turn-on Loss vs. Gate Resistance
TYPICAL
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
I
I I
I
C
CC
C
=1200A
=1200A=1200A
=1200A
L=65nH
L=65nH L=65nH
L=65nH
C
C C
C
GE
GEGE
GE
=120nF
=120nF=120nF
=120nF
V
V V
V
G
GG
G
=±15V
=±15V=±15V
=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
I
C
V
GE
10%
10%
V
CE
0
0
t1 t3 t4 t2
Eon(10%)=
∫
I
C
・
V
CE
dt
Eon(full)=
∫
I
C
・
V
CE
dt
t4
t2
t3
t1
Eon(Full)
Eon(10%)
0.0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5
Gate Resistance R
G
(
Ω
ΩΩ
Ω
)
Turn-off Loss Eoff (J/pulse)
Turn-off Loss vs. Gate Resistance
TYPICAL
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
I
I I
I
C
CC
C
=1200A
=1200A=1200A
=1200A
L=65nH
L=65nH L=65nH
L=65nH
C
C C
C
GE
GEGE
GE
=120nF
=120nF=120nF
=120nF
V
V V
V
G
GG
G
=±15V
=±15V=±15V
=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
Eoff(10%)=
∫
I
C
・
V
CE
dt
Eoff(full)=
∫
I
C
・
V
CE
dt
t8
t6
t7
t5
V
GE
V
CE
I
C
10%
10%
t8
t7
t
0
0
t5
t6
Eoff(Full)
Eoff(10%)
0.0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5
Gate Resistance R
G
(
Ω
ΩΩ
Ω
)
Reverse Recovery Loss Err (J/pulse)
Recovery Loss vs. Gate Resistance
TYPICAL
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
I
I I
I
C
CC
C
=1200A
=1200A=1200A
=1200A
L=65nH
L=65nH L=65nH
L=65nH
C
C C
C
GE
GEGE
GE
=120nF
=120nF=120nF
=120nF
V
V V
V
G
GG
G
=±15V
=±15V=±15V
=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
Err(10%)=
∫
I
C
・
V
CE
dt
Err(full)=
∫
I
C
・
V
CE
dt
t12
t10
t11
t9
V
CE
0.1V
CE
0.1I
F
I
RM
-I
C
t10
t11
t
0
t12
t9
I
F
Err(Full)
Err(10%)
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IGBT MODULE Spec.No.IGBT-SP-03007 R7
P6
MBN1200E17D
3. TRANSIENT THERMAL IMPEDANCE
Transient Thermal Impedance Curve
(Maximum Value)
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Time t(s)
IGBT
FWD
Transient thermal impedance Rth(j-c)(K/W)
4. Negative environmental impact material
Please note that following materials are contained in the product In order to
keep characteristics and reliability level.
Material Contained part
Lead (Pb) and its compounds Solder
Arsenic and its compounds Si chip
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IGBT MODULE Spec.No.IGBT-SP-03007 R7
P7
MBN1200E17D
HITACHI POWER SEMICONDUCTORS
For inquiries relating to the products, please contact nearest overseas representatives that is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address
http://www.hitachi.co.jp/products/power/pse/
Notices
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales
department for the latest version of this
data sheets.
2.
Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.
In cases where extremely high reliability is required (such as use in nuclear power
control, aerospace and aviation, traffic equipment, life-support-
related medical
equipment, fuel
control equipment and various kinds of safety equipment), safety should
be ensured by
using semiconductor devices that feature assured safety or by means of
users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department
staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheet
s. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5. In no event shall Hitachi be liable for any failure in
a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7. This data sheets may n
ot be reproduced or duplicated, in any form, in whole or in part,
without the expressed written permission of Hitachi, Ltd.
8. The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application
will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
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