N September 1996 NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features Power SOT logic level N-Channel enhancement mode field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. 3.7A, 60V. RDS(ON) = 0.12 @ VGS = 4.5V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _______________________________________________________________________________________________ D G D D Absolute Maximum Ratings S G S TA = 25C unless otherwise noted Symbol Parameter NDT3055L Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage - Continuous 20 V ID Drain Current - Continuous 3.7 A (Note 1a) - Pulsed PD Maximum Power Dissipation 25 (Note 1a) 3 (Note 1b) 1.3 (Note 1c) TJ,TSTG Operating and Storage Temperature Range W 1.1 -65 to 150 C THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 12 C/W * Order option J23Z for cropped center drain lead. NDT3055L Rev. D2 Electrical Characteristics (T Symbol A = 25C unless otherwise noted) Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 60 V TJ = 125C 1 A 50 A IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA V ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A TJ = 125C RDS(ON) Static Drain-Source On-Resistance 1 1.7 2 0.6 1.3 1.6 0.105 0.12 0.17 0.24 VGS = 4.5 V, ID = 3.7 A TJ = 125C VGS = 10 V, ID = 3.9 A ID(on) On-State Drain Current VGS = 5 V, VDS = 10 V gFS Forward Transconductance VDS = 5 V, ID = 3.7 A 0.1 10 A 6 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz 435 pF 120 pF 30 pF SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time VDD = 25 V, ID = 1 A, VGS = 10 V, RGEN = 6 tr Turn - On Rise Time tD(offf) Turn - Off Delay Time 24 50 ns tf Turn - Off Fall Time 7 20 ns Qg Total Gate Charge 13.5 20 nC Qgs Gate-Source Charge 1.5 3 nC Qgd Gate-Drain Charge 4 8 nC VDS = 40 V, ID = 3.7 A, VGS = 10 V 8 20 ns 4 20 ns NDT3055L Rev. D2 Electrical Characteristics (T Symbol A = 25C unless otherwise noted) Parameter Conditions Min Typ Max Units 2.5 A 0.86 1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuos Source-Drain Diode Forward Current VSD Source-Drain Diode Forward Voltage VGS = 0 V, IS = 1.5 A (Note 2) Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. P D (t) = T J -T A R JA (t) = T J -T A R JC +R CA (t) = I 2D (t) x R DS(ON)@T J Typical RJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 42oC/W when mounted on a 1 in2 pad of 2oz copper. b. 95oC/W when mounted on a 0.066 in2 pad of 2oz copper. c. 110oC/W when mounted on a 0.0123 in2 pad of 2oz copper. 1a 1b 1c Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. NDT3055L Rev. D2 Typical Electrical Characteristics (continued) 2.5 VGS = 10V 6.0V 5.5V RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 20 5.0V 15 4.5V 10 4.0V 5 3.0V VGS = 3.0V 3.5V 2 4.0V 1.5 4.5V 5.0V 1 6.0V 10V 2.5V 0 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 0.5 5 Figure 1. On-Region Characteristics. RDS(on) , NORMALIZED 1.2 1 0.8 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 0.6 -50 12 15 Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE (V) TJ = -55C 25C 125C 8 6 4 2 1.5 2 2.5 3 VGS , GATE TO SOURCE VOLTAGE (V) 3.5 T J= 125C 2 1.5 25C 1 -55C 0.5 0 2 4 6 I D , DRAIN CURRENT (A) 8 10 Figure 4. On-Resistance Variation with Drain Current and Temperature. 10 VDS = 15V V GS = 4.5 V 2.5 0 150 Figure 3. On-Resistance Variation with Temperature. I D , DRAIN CURRENT (A) 6 9 ID , DRAIN CURRENT (A) 3 I D = 3.7A VGS = 4.5V 1.6 1 3 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 1.8 0 0 4 Figure 5. Drain Current Variation with Gate Voltage and Temperature. 1.3 V DS = VGS I D = 250A 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150 Figure 6. Gate Threshold Variation with Temperature. NDT3055L Rev. D2 10 1.15 I D = 250A IS , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE (V) Typical Electrical Characteristics (continued) 1.1 1.05 1 0.95 0.9 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150 VGS = 0V 5 2 25C 1 -55C 0.5 0.3 0.2 0.1 0.4 Figure 7. Breakdown Voltage Variation with Temperature. CAPACITANCE (pF) 200 C oss 100 50 C rss f = 1 MHz VGS = 0V 0.2 0.5 1 2 5 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 20 I D = 3.7A VGS , GATE-SOURCE VOLTAGE (V) C iss 300 10 0.1 8 V DS = 10V 4 2 0 0 2 4 t on t d(on) td(off) tf VOUT 10% 10% INVERTED DUT G 14 90% 90% V OUT 12 toff tr RL D R GEN 6 8 10 Q g , GATE CHARGE (nC) Figure 10. Gate Charge Characteristics. VDD VIN 20V 40V 6 50 Figure 9. Capacitance Characteristics. VGS 1.4 10 500 20 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 1000 30 TJ = 125C 3 90% S VIN 50% 50% 10% PULSE WIDTH Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDT3055L Rev. D2 Typical Electrical Characteristics (continued) 40 T J = -55C 8 10 ID , DRAIN CURRENT (A) g FS , TRANSCONDUCTANCE (SIEMENS) 10 25C 6 125C 4 2 V DS = 15V 0 0 2 4 6 I D , DRAIN CURRENT (A) 8 3 Figure 13. Transconductance Variation with Drain Current and Temperature. 100 us t 1m s 10m s 100 ms 1s 10s DC 1 0.3 0.1 0.03 10 N) S(O RD i Lim 0.01 0.1 V GS = 4.5V SINGLE PULSE R JA = 42 o C/W TA = 25C 0.2 0.5 1 2 5 10 20 VDS , DRAIN-SOURCE VOLTAGE (V) 60 100 Figure 14. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 R JA (t) = r(t) * R JA R JA = See Note 1 c P(pk) 0.01 t1 0.005 Single Pulse 0.002 0.001 0.0001 t2 TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2 0.001 0.01 0.1 t 1 , TIME (sec) 1 10 100 300 Figure 15. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. NDT3055L Rev. D2