MOTOROM
SEMICONDUCTOR TECHNICAL DATA Orderthisdocument
by2C818HVD
e
2C918HV Chip
NPN Silicon
Smal14ignal Transistor .11
,..deeigned for VHF operation in tuned amptifier/oscillator applications.
●SmalHgnal Power Gain —15 dB Min @200 MHz
.Noise Figure —6.0 dBMax@ 60MHz
DieSize—
10x15 roils
tie Thickness —
Hroils
BondPadSlzw
Emitter —2.0x 4,0 roils
Base —2,0x 4.0 roils
BackMetal
20 ~Gold (Nom)
Top Metal
15 ~Alum. (Nom)
BackSide =Collector
@M-ROLA
ELECTRICAL CHARACTERISTICS — continual ~A. 25°C unless otherwise noted.)
Chareotetietlc S~bol IMln Max Unit
ON CHARACTERISTICS
DC Current Gain hFE
(!C =500 @de, VCE =10 Vdc) —
10
(ic =3,0 tide, VCE =1.0 Vdc) —
20 200
(Ic =10 mAdc, VCE =10 Vdc) *,\
20 *’X,l,
~~q*:,,:$$
(Ic =3.0 mAdc, VCE =1.0 Vdc, TA =+5”C) ,.i~.,...,
10 ‘,:.s..,,
—,.,,::),
~. St.b:$
\
Collector-Emiter Saturation Voltage VCE(sat) 0.4 ,e;>gy”
(Ic =10 tide, IB =1.0 mAdc) ....,,:,.&
~s$.,~~.
Bas*Emitter Saturation Vobge ....)
VBE(~at) 1.0 ,,,$?,+.f.$,;.,
—“.,?.?5<:! Vdc
(lc=lo~dC, iB=l.otidC) .:2”
,:,.:<**,),“, ~>
.?.,,:.-.,+:
SMALL41GNAL CHARACTERISTICS ,.,,
i,s\$,,,$:,.jl
::J .,,>
.Yri~,
$.,, whichever is greater
Delta DC Current Gain AhFE —&o ‘A of Initial Value
COMMERCIAL PLUSAND MIUAERO SMALL SIGNAL TRANSISTOR DATA
3-144
2C918HV
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the su.~il~ of &-/or any particular PU-, nordoes Motorola assume any l~lity tising out of the app~ition or use of any product or circuit,
andspedfitily~-by endal ~illty, i~ludingw.thouf Mmhtion conaequentii orindWnU damag~. ~~~peremetere mand tivary indifferent
eppficatiin~.~1~~’ng perametem, i~lUdin9 Typicd# must bevdWted for each customereppticationbycuetomr’s tahn.ti ex~rts. Motorola does
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@
es~ated wk uchunintendedorunauthorized use,even ifsuch claim allegesthat Motorola was negligent regdlng thedesign or manufatire ofthe pati.
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Lheretura Dl~butlon Cente~
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@M-ROLA lPH~4101 1-2 PRINTEDINUSA WS4 MPWPOD CPTO YDACAA 2C91W/D
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