TC59LM913/05AMB-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TM 8,388,608-WORDS x 4 BANKS x 16-BITS Network FCRAM TM 16,777,216-WORDS x 4 BANKS x 8-BITS Network FCRAM DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM913/05AMB is Network FCRAMTM containing 536,870,912 memory cells. TC59LM913AMB is organized as 8,388,608-words x 4 banks x 16 bits, TC59LM905AMB is organized as 16,777,216-words x 4 banks x 8 bits. TC59LM913/05AMB feature a fully synchronous operation referenced to clock edge whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. TC59LM913/05AMB can operate fast core cycle compared with regular DDR SDRAM. TC59LM913/05AMB is suitable for Network, Server and other applications where large memory density and low power consumption are required. The Output Driver for Network FCRAMTM is capable of high quality fast data transfer under light loading condition. FEATURES PARAMETER * * * * * * * * * * * * * CL = 3 -50 TC59LM913/05 -55 -60 5.5 ns 6.0 ns 6.5 ns tCK Clock Cycle Time (min) 5.0 ns 5.5 ns 6.0 ns tRC Random Read/Write Cycle Time (min) 25.0 ns 27.5 ns 30.0 ns tRAC Random Access Time (max) 26.0 ns CL = 4 22.0 ns 24.0 ns IDD1S Operating Current (single bank) (max) TBD TBD TBD lDD2P Power Down Current (max) TBD TBD TBD lDD6 TBD TBD TBD Self-Refresh Current (max) Fully Synchronous Operation * Double Data Rate (DDR) Data input/output are synchronized with both edges of DQS. * Differential Clock (CLK and CLK ) inputs CS , FN and all address input signals are sampled on the positive edge of CLK. Output data (DQs and DQS) is aligned to the crossings of CLK and CLK . Fast clock cycle time of 5 ns minimum Clock: 200 MHz maximum Data: 400 Mbps/pin maximum Fast cycle and Short Latency Distributed Auto-Refresh cycle in 7.8 s Self-Refresh Power Down Mode Variable Write Length Control Write Latency = CAS Latency-1 Programable CAS Latency and Burst Length CAS Latency = 3, 4 Burst Length = 2, 4 Organization: TC59LM813AMB : 8,388,608 words x 4 banks x 16 bits TC59LM805AMB : 16,777,216 words x 4 banks x 8 bits Power Supply Voltage VDD: 2.5 V 0.15V VDDQ: 2.5 V 0.15 V 2.5 V CMOS I/O comply with SSTL-2 (half strength driver) Package: 60Ball BGA, 1mm x 1mm Ball pitch Notice : FCRAM is trademark of Fujitsu Limited, Japan. 2003-08-04 1/50 TC59LM913/05AMB-50,-55,-60 TC59LM905AMB PIN NAMES PIN ASSIGNMENT (TOP VIEW) PIN NAME A0~A14 Address Input BA0, BA1 Bank Address DQ0~DQ7 Data Input/Output CS Chip Select FN Function Control PD Power Down Control CLK, CLK Clock Input DQS Write/Read Data Strobe VDD Power (+2.5 V) VSS Ground VDDQ Power (+2.5 V) (for I/O buffer) VSSQ Ground (for I/O buffer) VREF Reference Voltage NC Not Connected ball pitch=1.0 x 1.0mm x8 1 2 3 4 5 6 Index A VSS DQ7 DQ0 VDD B NC VSSQ VDDQ NC C DQ6 VDDQ VSSQ DQ1 D NC DQ5 DQ2 NC E NC VSSQ VDDQ NC F DQ4 VDDQ VSSQ DQ3 G NC VSSQ VDDQ NC H NC DQS NC NC J VREF VSS VDD A14 K CLK CLK FN A13 L A12 PD CS NC M A11 A9 BA1 BA0 N A8 A7 A0 A10 P A5 A6 A2 A1 R VSS A4 A3 VDD 2003-08-04 2/50 TC59LM913/05AMB-50,-55,-60 TC59LM913AMB PIN NAMES PIN ASSIGNMENT (TOP VIEW) PIN NAME A0~A14 Address Input BA0, BA1 Bank Address DQ0~DQ15 Data Input/Output CS Chip Select FN Function Control PD Power Down Control CLK, CLK Clock Input UDQS / LDQS Write/Read Data Strobe VDD Power (+2.5 V) VSS Ground VDDQ Power (+2.5 V) (for I/O buffer) VSSQ Ground (for I/O buffer) VREF Reference Voltage NC Not Connected ball pitch=1.0 x 1.0mm x 16 1 2 3 4 5 6 Index A VSS DQ15 DQ0 VDD B DQ14 VSSQ VDDQ DQ1 C DQ13 VDDQ VSSQ DQ2 D DQ12 DQ11 DQ4 DQ3 E DQ10 VSSQ VDDQ DQ5 F DQ9 VDDQ VSSQ DQ6 G DQ8 VSSQ VDDQ DQ7 H NC UDQS LDQS NC J VREF VSS VDD A14 K CLK CLK FN A13 L A12 PD CS NC M A11 A9 BA1 BA0 N A8 A7 A0 A10 P A5 A6 A2 A1 R VSS A4 A3 VDD 2003-08-04 3/50 TC59LM913/05AMB-50,-55,-60 BLOCK DIAGRAM CLK CLK PD CS FN DLL CLOCK BUFFER COMMAND DECODER To each block CONTROL SIGNAL GENERATOR BANK #3 BANK #2 BANK #1 A0~A14 BA0, BA1 ADDRESS BUFFER UPPER ADDRESS LATCH LOWER ADDRESS LATCH REFRESH COUNTER BURST COUNTER DATA CONTROL and LATCH CIRCUIT MODE REGISTER ROW DECODER BANK #0 MEMORY CELL ARRAY COLUMN DECODER READ DATA BUFFER WRITE ADDRESS LATCH/ ADDRESS COMPARATOR DQS WRITE DATA BUFFER DQ BUFFER DQ0~DQn Note: The TC59LM905AMB configuration is 4 Bank of 32768 x 512 x 8 of cell array with the DQ pins numbered DQ0~DQ7. The TC59LM913AMB configuration is 4 Bank of 32768 x 256 x 16 of cell array with the DQ pins numbered DQ0~DQ15. 2003-08-04 4/50 TC59LM913/05AMB-50,-55,-60 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT -0.3~3.3 V VDD Power Supply Voltage VDDQ Power Supply Voltage (for I/O buffer) -0.3~VDD+ 0.3 V VIN Input Voltage -0.3~VDD+ 0.3 V VOUT Output and I/O pin Voltage -0.3~VDDQ + 0.3 V VREF Input Reference Voltage -0.3~VDD+ 0.3 V Topr Operating Temperature (Ambient) 0~70 C Tstg Storage Temperature -55~150 C Tsolder Soldering Temperature (10 s) 260 C PD Power Dissipation 2 W IOUT Short Circuit Output Current 50 mA NOTES Caution: Conditions outside the limits listed under "ABSOLUTE MAXIMUM RATINGS" may cause permanent damage to the device. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to "ABSOLUTE MAXIMUM RATINGS" conditions for extended periods may affect device reliability. RECOMMENDED DC, AC OPERATING CONDITIONS (Notes: 1)(TCASE = 0~85C) SYMBOL PARAMETER MIN TYP. MAX UNIT NOTES VDD Power Supply Voltage 2.35 2.5 2.65 V VDDQ Power Supply Voltage (for I/O buffer) 2.35 VDD VDD V VREF Input Reference Voltage VDDQ/2 x 96% VDDQ/2 VDDQ/2 x 104% V 2 VIH (DC) Input DC High Voltage VREF + 0.2 VDDQ + 0.2 V 5 VIL (DC) Input DC Low Voltage -0.1 VREF - 0.2 V 5 VICK (DC) Differential Clock DC Input Voltage -0.1 VDDQ + 0.1 V 10 VID (DC) Input Differential Voltage. CLK and CLK inputs (DC) 0.4 VDDQ + 0.2 V 7, 10 VIH (AC) Input AC High Voltage VREF + 0.35 VDDQ + 0.2 V 3, 6 VIL (AC) Input AC Low Voltage -0.1 VREF - 0.35 V 4, 6 VID (AC) Input Differential Voltage. CLK and CLK inputs (AC) 0.7 VDDQ + 0.2 V 7, 10 VX (AC) Differential AC Input Cross Point Voltage VDDQ/2 - 0.2 VDDQ/2 + 0.2 V 8, 10 VISO (AC) Differential Clock AC Middle Level VDDQ/2 - 0.2 VDDQ/2 + 0.2 V 9, 10 2003-08-04 5/50 TC59LM913/05AMB-50,-55,-60 Note: (1) All voltages referenced to VSS, VSSQ. (2) VREF is expected to track variations in VDDQ DC level of the transmitting device. Peak to peak AC noise on VREF may not exceed 2% VREF (DC). (3) Overshoot limit: VIH (max) = VDDQ + 0.9 V with a pulse width 5 ns. (4) Undershoot limit: VIL (min) = -0.9 V with a pulse width 5 ns. (5) VIH (DC) and VIL (DC) are levels to maintain the current logic state. (6) VIH (AC) and VIL (AC) are levels to change to the new logic state. (7) VID is magnitude of the difference between CLK input level and CLK input level. (8) The value of VX (AC) is expected to equal VDDQ/2 of the transmitting device. (9) VISO means {VICK (CLK) + VICK ( CLK )} /2 (10) Refer to the figure below. CLK Vx Vx Vx Vx Vx VID (AC) CLK VSS VICK VICK VICK VISO (min) VISO (max) VICK |VID (AC)| 0 V Differential VISO VSS (11) In the case of external termination, VTT (termination voltage) should be gone in the range of VREF (DC) 0.04 V. CAPACITANCE (VDD = 2.5V, VDDQ = 2.5 V, f = 1 MHz, Ta = 25C) SYMBOL PARAMETER MIN MAX Delta UNIT CIN Input pin Capacitance 1.5 2.5 0.25 pF CINC Clock pin (CLK, CLK ) Capacitance 1.5 2.5 0.25 pF CI/O DQ, DQS, UDQS, LDQS Capacitance 2.5 4.0 0.5 pF CNC NC pin Capacitance 4.0 pF Note: These parameters are periodically sampled and not 100% tested. 2003-08-04 6/50 TC59LM913/05AMB-50,-55,-60 RECOMMENDED DC OPERATING CONDITIONS (VDD=2.5V 0.15V, VDDQ=2.5V 0.15V, TCASE = 0~85C) SYMBOL MAX PARAMETER UNIT NOTES -50 -55 -60 IDD1S Operating Current tCK = min; IRC = min, Read/Write command cycling, 0 V VIN VIL (AC) (max), VIH (AC) (min) VIN VDDQ, 1 bank operation, Burst length = 4, Address change up to 2 times during minimum IRC. TBD TBD TBD 1, 2 IDD2N Standby Current tCK = min, CS = VIH, PD = VIH, 0 V VIN VIL (AC) (max), VIH (AC) (min) VIN VDDQ, All banks: inactive state, Other input signals are changed one time during 4 x tCK. TBD TBD TBD 1 IDD2P Standby (power down) Current tCK = min, CS = VIH, PD = VIL (power down), 0 V VIN VDDQ, All banks: inactive state TBD TBD TBD 1 IDD5 Auto-Refresh Current tCK = min; IREFC = min, tREFI = min, Auto-Refresh command cycling, 0 V VIN VIL (AC) (max), VIH (AC) (min) VIN VDDQ, Address change up to 2 times during minimum IREFC. TBD TBD TBD 1 IDD6 Self-Refresh Current Self-Refresh mode PD = 0.2 V, 0 V VIN VDDQ TBD TBD TBD MIN MAX UNIT SYMBOL PARAMETER mA NOTES ILI Input Leakage Current ( 0 V VIN VDDQ, all other pins not under test = 0 V) -5 5 A ILO Output Leakage Current (Output disabled, 0 V VOUT VDDQ) -5 5 A IREF VREF Current -5 5 A Output Source DC Current VOH = VDDQ - 0.4V -10 3 Output Sink DC Current VOL = 0.4V 10 3 Output Source DC Current Strong Output VOH = VDDQ - 0.4V Driver Output Sink DC Current VOL = 0.4V -11 3 11 Output Source DC Current VOH = VDDQ - 0.4V -8 3 Output Sink DC Current VOL = 0.4V 8 3 Output Source DC Current VOH = VDDQ - 0.4V -7 3 Output Sink DC Current VOL = 0.4V 7 3 IOH (DC) IOL (DC) IOH (DC) IOL (DC) IOH (DC) IOL (DC) IOH (DC) IOL (DC) Normal Output Driver Weaker Output Driver Weakest Output Driver 3 mA Notes: 1. These parameters depend on the cycle rate and these values are measured at a cycle rate with the minimum values of tCK, tRC and IRC. 2. These parameters depend on the output loading. The specified values are obtained with the output open. 3. Refer to output driver characteristics for the detail. Output Driver Strength is selected by Extended Mode Register. 2003-08-04 7/50 TC59LM913/05AMB-50,-55,-60 AC CHARACTERISTICS AND OPERATING CONDITIONS (Notes: 1, 2) (VDD = 2.5V 0.15V, VDDQ = 2.5V 0.15V, TCASE = 0~85C) SYMBOL -50 PARAMETER -55 -60 UNIT NOTES MIN MAX MIN MAX MIN MAX 25 27.5 30 3 CL = 3 5.5 8.5 6.0 12.0 6.5 12.0 3 CL = 4 5.0 8.5 5.5 12.0 6.0 12.0 3 22.0 24.0 26.0 3 tRC Random Cycle Time tCK Clock Cycle Time tRAC Random Access Time tCH Clock High Time 0.45 x tCK 0.45 x tCK 0.45 x tCK 3 tCL Clock Low Time 0.45 x tCK 0.45 x tCK 0.45 x tCK 3 tCKQS QS Access Time from CLK -0.65 0.65 -0.75 0.75 -0.85 0.85 3, 8 tQSQ Data Output Skew from DQS 0.4 0.45 0.55 4 tAC Data Access Time from CLK -0.65 0.65 -0.75 0.75 -0.85 0.85 3, 8 tOH Data Output Hold Time from CLK -0.65 0.65 -0.75 0.75 -0.85 0.85 3, 8 tQSPRE DQS (read) Preamble Pulse Width 0.9 x tCK - 0.2 1.1 x tCK + 0.2 0.9 x tCK - 0.2 1.1 x tCK + 0.2 0.9 x tCK - 0.2 1.1 x tCK + 0.2 3, 8 tHP CLK half period (minimum of Actual tCH, tCL) min(tCH, tCL) min(tCH, tCL) min(tCH, tCL) 3 tQSP DQS (read) Pulse Width tHP- tQHS tHP- tQHS tHP- tQHS 4, 8 tQSQV Data Output Valid Time from DQS tHP- tQHS tHP- tQHS tHP- tQHS 4, 8 tQHS DQ Hold Skew factor 0.55 0.6 0.65 tDQSS DQS (write) Low to High Setup Time 0.75 x tCK 1.25 x tCK 0.75 x tCK 1.25 x tCK 0.75 x tCK 1.25 x tCK tDSPRE DQS (write) Preamble Pulse Width tDSPRES DQS First Input Setup Time tDSPREH ns 3 0.4 x tCK 0.4 x tCK 0.4 x tCK 4 0 0 0 3 DQS First Low Input Hold Time 0.25 x tCK 0.25 x tCK 0.25 x tCK 3 tDSP DQS High or Low Input Pulse Width 0.45 x tCK 0.55 x tCK 0.45 x tCK 0.55 x tCK 0.45 x tCK 0.55 x tCK tDSS DQS Input Falling Edge CL = 3 to Clock Setup Time CL = 4 tDSPST DQS (write) Postamble Pulse Width tDSPSTH DQS (write) Postamble Hold Time tDSSK UDQS - LDQS Skew (x16) tDS 4 1.3 1.4 1.5 3, 4 1.3 1.4 1.5 3, 4 0.45 x tCK 0.45 x tCK 0.45 x tCK 4 CL = 3 1.3 1.4 1.5 3, 4 CL = 4 1.3 1.4 1.5 3, 4 -0. 5 x tCK 0. 5 x tCK -0. 5 x tCK 0. 5 x tCK -0. 5 x tCK 0. 5 x tCK Data Input Setup Time from DQS 0.5 0.5 0.6 4 tDH Data Input Hold Time from DQS 0.5 0.5 0.6 4 tIS Command/Address Input Setup Time 0.9 0.9 1.0 3 tIH Command/Address Input Hold Time 0.9 0.9 1.0 3 2003-08-04 8/50 TC59LM913/05AMB-50,-55,-60 AC CHARACTERISTICS AND OPERATING CONDITIONS (Notes: 1, 2) (continued) SYMBOL -50 PARAMETER -55 -60 UNIT MIN MAX MIN MAX MIN MAX NOTES tLZ Data-out Low Impedance Time from CLK -0.65 -0.75 -0.85 3,6,8 tHZ Data-out High Impedance Time from CLK 0.65 0.75 0.85 3,7,8 tQSLZ DQS-out Low Impedance Time from CLK -0.65 -0.75 -0.85 3,6,8 tQSHZ DQS-out High Impedance Time from CLK -0.65 0.65 -0.75 0.75 -0.85 0.85 3,7,8 tQPDH Last output to PD High Hold Time 0 0 0 tPDEX Power Down Exit Time 0.9 0.9 1.0 tT Input Transition Time 0.1 1 0.1 1 0.1 1 tFPDL PD Low Input Window for Self-Refresh Entry -0.5 x tCK 5 -0.5 x tCK 5 -0.5 x tCK 5 tREFI Auto-Refresh Average Interval 0.4 7.8 0.4 7.8 0.4 7.8 tPAUSE Pause Time after Power-up 200 200 200 CL = 3 Random Read/Write Cycle Time (applicable to same bank) CL = 4 5 5 5 IRC 5 5 5 IRCD RDA/WRA to LAL Command Input Delay (applicable to same bank) 1 1 1 1 1 1 LAL to RDA/WRA Command Input Delay (applicable to same bank) CL = 3 4 4 4 IRAS CL = 4 4 4 4 2 2 2 2 2 2 3 3 3 IRBD Random Bank Access Delay (applicable to other bank) IRWD BL = 2 LAL following RDA to WRA Delay (applicable to other bank) BL = 4 IWRD LAL following WRA to RDA Delay (applicable to other bank) 1 1 1 Mode Register Set Cycle Time CL = 3 5 5 5 IRSC CL = 4 5 5 5 IPD PD Low to Inactive State of Input Buffer 1 1 1 IPDA PD High to Active State of Input Buffer 1 1 1 Power down mode valid from REF command CL = 3 15 15 15 IPDV CL = 4 18 18 18 CL = 3 15 15 15 CL = 4 18 18 18 IREFC Auto-Refresh Cycle Time ICKD REF Command to Clock Input Disable at Self-Refresh Entry 16 16 16 ILOCK DLL Lock-on Time (applicable to RDA command) 200 200 200 ns 3 3 s 5 cycle 2003-08-04 9/50 TC59LM913/05AMB-50,-55,-60 AC TEST CONDITIONS SYMBOL PARAMETER VALUE UNIT VIH (min) Input High Voltage (minimum) VREF + 0.35 V VIL (max) Input Low Voltage (maximum) VREF - 0.35 V VREF Input Reference Voltage VDDQ/2 V VTT Termination Voltage VREF V VSWING Input Signal Peak to Peak Swing 1.0 V Vr Differential Clock Input Reference Level VX (AC) V VID (AC) Input Differential Voltage 1.5 V SLEW Input Signal Minimum Slew Rate 1.0 V/ns VOTR Output Timing Measurement Reference Voltage VDDQ/2 V VDDQ NOTES 9 VTT VIH min (AC) VSWING VREF RT=50 Measurement point Output Z = 50 VIL max (AC) CL=30pF VREF VSS T T AC Test Load SLEW = (VIH min (AC) - VIL max (AC))/T Note: (1) Transition times are measured between VIH min (DC) and VIL max (DC). Transition (rise and fall) of input signals have a fixed slope. (2) If the result of nominal calculation with regard to tCK contains more than one decimal place, the result is rounded up to the nearest decimal place. (i.e., tDQSS = 0.75 x tCK, tCK = 5 ns, 0.75 x 5 ns = 3.75 ns is rounded up to 3.8 ns.) (3) There parameters are measured from the differential clock (CLK and CLK ) AC cross point. (4) These parameters are measured from signal transition point of DS crossing VREF level. (5) The tREFI (max) applies to equally distributed refresh method. The tREFI (min) applies to both burst refresh method and distributed refresh method. In such case, the average interval of eight consecutive Auto-Refresh commands has to be more than 400 ns always. In other words, the number of Auto-Refresh cycles which can be performed within 3.2 s (8 x 400 ns) is to 8 times in the maximum. (6) Low Impedance State is specified at VDDQ/2 0.2 V from steady state. (7) High Impedance State is specified where output buffer is no longer driven. (8) These parameters depend on the clock jitter. These parameters are measured at stable clock. (9) Output timing is measured by using Normal driver strength. 2003-08-04 10/50 TC59LM913/05AMB-50,-55,-60 POWER UP SEQUENCE (1) As for PD , being maintained by the low state ( 0.2 V) is desirable before a power-supply injection. (2) Apply VDD before or at the same time as VDDQ. (3) Apply VDDQ before or at the same time as VREF. (4) Start clock (CLK, CLK ) and maintain stable condition for 200 s (min). (5) After stable power and clock, apply DESL and take PD =H. (6) Issue EMRS to enable DLL and to define driver strength. (Note: 1) (7) Issue MRS for set CAS latency (CL), Burst Type (BT), and Burst Length (BL). (Note: 1) (8) Issue two or more Auto-Refresh commands (Note: 1). (9) Ready for normal operation after 200 clocks from Extended Mode Register programming. Notes: (1) (2) Sequence 6, 7 and 8 can be issued in random order. L = Logic Low, H = Logic High 2.5V(TYP) VDD 2.5V(TYP) VDDQ 1.25V(TYP) VREF CLK CLK tPDEX lPDA 200us(min) lRSC lRSC lREFC lREFC PD 200clock cycle(min) Command DESL RDA MRS DESL op-code RDA MRS DESL WRA REF DESL WRA REF DESL op-code Address EMRS MRS DQ DQS Hi-Z EMRS MRS Auto Refresh cycle Normal Operation 2003-08-04 11/50 TC59LM913/05AMB-50,-55,-60 TIMING DIAGRAMS Input Timing Command and Address tCK tCK tCH tCL CLK CLK tIS CS tIH tIS 1st tIS FN 2nd tIH tIS 1st tIS A0~A14 BA0, BA1 tIH tIH 2nd tIH tIS UA, BA tIH LA Data DQS tDS tDH tDS tDH DQ (input) Refer to the Command Truth Table. Timing of the CLK, CLK tCH tCL CLK VIH VIH (AC) CLK VIL (AC) VIL tT tCK tT CLK VIH VID (AC) CLK VX VX VX VIL 2003-08-04 12/50 TC59LM913/05AMB-50,-55,-60 Read Timing (Burst Length = 4) tCH tCL tCK CLK CLK tIS tIH LAL (after RDA) Input (control & addresses) DESL tCKQS tQSLZ tCKQS tQSP tQSP CAS latency = 3 DQS (output) tCKQS tQSHZ tQSPRE Hi-Z Preamble Postamble tQSQV tLZ tQSQ tQSQ tQSQ tQSQV DQ (output) Hi-Z Q0 tAC Q1 tAC DQS (output) Q2 Q3 tAC tOH tCKQS tQSLZ CAS latency = 4 tHZ tCKQS tQSPRE tCKQS tQSP tQSP tQSHZ Hi-Z Preamble Postamble tLZ tQSQV tQSQ tQSQ tQSQ tQSQV DQ (output) Hi-Z Q0 tAC Q1 tAC Q2 tHZ Q3 tAC tOH Note: DQ0 to DQ15 are aligned with DQS or LDQS/UDQS. The correspondence of LDQS, UDQS to DQ. (TC59LM913AMB) LDQS DQ0DQ7 UDQS DQ8DQ15 2003-08-04 13/50 TC59LM913/05AMB-50,-55,-60 Write Timing (Burst Length = 4) tCH tCL tCK CLK CLK tIS tIH LAL (after WRA) Input (control & addresses) DESL tDSPSTH tDQSS tDSS tDSPRES CAS latency = 3 tDSPREH tDSP tDSP tDSP tDSPST DQS (input) tDSS Preamble Postamble tDSPRE tDS tDH tDH DQ (input) tDS tDS D0 D1 D2 tDH D3 tDQSS tDSS CAS latency = 4 DQS (input) tDSPSTH tDSS tDSPRES tDSPREH tDSP tDSP tDSP tDSPST Preamble tDSPRE Postamble tDS tDS tDH DQ (input) D0 tDQSS tDS tDH D1 D2 tDH D3 tDQSS Note: DQ0 to DQ15 are sampled at both edges of DQS or LDQS / UDQS. The correspondence of LDQS, UDQS to DQ. (TC59LM913AMB) LDQS DQ0DQ7 UDQS DQ8DQ15 2003-08-04 14/50 TC59LM913/05AMB-50,-55,-60 tREFI, tPAUSE, Ixxxx Timing CLK CLK tREFI, tPAUSE, IXXXX tIS tIH tIS tIH Input (control & addresses) Command Command Note: "IXXXX" means "IRC", "IRCD", "IRAS", etc. 2003-08-04 15/50 TC59LM913/05AMB-50,-55,-60 Write Timing (x16 device) (Burst Length =4) CLK CLK Input (control & addresses) WRA LAL (DESL) tDSSK tDSSK tDSSK tDSSK CAS latency = 3 LDQS Preamble Postamble tDS tDS tDH tDH tDH D0 DQ0~DQ7 tDS tDS D1 D2 tDH D3 UDQS Preamble Postamble tDS tDS tDH DQ8~DQ15 tDS tDH D0 tDS tDH D1 tDH D2 D3 tDSSK tDSSK tDSSK tDSSK CAS latency = 4 LDQS Preamble Postamble tDS tDS tDH tDH D0 DQ0~DQ7 tDS tDS tDH tDH D1 D2 D3 UDQS Preamble Postamble tDS tDH DQ8~DQ15 tDS tDS tDH D0 D1 tDS tDH D2 tDH D3 2003-08-04 16/50 TC59LM913/05AMB-50,-55,-60 FUNCTION TRUTH TABLE (Notes: 1, 2, 3) Command Truth Table (Notes: 4) * The First Command SYMBOL FUNCTION CS FN BA1~BA0 A14~A9 A8 A7 A6~A0 DESL Device Deselect H x x x x x x RDA Read with Auto-close L H BA UA UA UA UA WRA Write with Auto-close L L BA UA UA UA UA * The Second Command (The next clock of RDA or WRA command) SYMBOL FUNCTION CS FN BA1~ BA0 A14, A13 A12~ A11 A10~A9 A8 A7 A6~A0 LAL Lower Address Latch (x16) H x x V V x x LA LA LAL Lower Address Latch (x8) H x x V x x LA LA LA REF Auto-Refresh L x x x x x x x x MRS Mode Register Set L x V L L L L V V Notes: 1. L = Logic Low, H = Logic High, x = either L or H, V = Valid (specified value), BA = Bank Address, UA = Upper Address, LA = Lower Address 2. All commands are assumed to issue at a valid state. 3. All inputs for command (excluding SELFX and PDEX) are latched on the crossing point of differential clock input where CLK goes to High. 4. Operation mode is decided by the combination of 1st command and 2nd command. Refer to "STATE DIAGRAM" and the command table below. Read Command Table COMMAND (SYMBOL) CS FN BA1~BA0 A14~A9 A8 A7 A6~A0 RDA (1st) L H BA UA UA UA UA LAL (2nd) H x x x LA LA LA NOTES 5 Note 5 : For x16 device, A8 is "X" (either L or H). Write Command Table * TC59LM913AMB COMMAND(SYMBOL) CS FN BA1~ BA0 A14 A13 A12 A11 A10~ A9 A8 A7 A6~A0 WRA (1st) L L BA UA UA UA UA UA UA UA UA LAL (2nd) H x x LVW0 LVW1 UVW0 UVW1 x x LA LA COMMAND(SYMBOL) CS FN BA1~ BA0 A14 A13 A12 A11 A10~ A9 A8 A7 A6~A0 WRA (1st) L L BA UA UA UA UA UA UA UA UA LAL (2nd) H x x VW0 VW1 x x x LA LA LA * TC59LM905AMB Notes: 6. A14 ~ A11 are used for Variable Write Length (VW) control at Write Operation. 2003-08-04 17/50 TC59LM913/05AMB-50,-55,-60 FUNCTION TRUTH TABLE (continued) VW Truth Table Burst Length BL=2 BL=4 Function VW0 VW1 Write All Words L x Write First One Word H x Reserved L L Write All Words H L Write First Two Words L H Write First One Word H H Note 7 : For x16 device, LVW0 and LVW1 control DQ0~DQ7. UVW0 and UVW1 control DQ8~DQ15. Mode Register Set Command Table COMMAND (SYMBOL) CS FN BA1~BA0 A14~A9 A8 A7 A6~A0 NOTES RDA (1st) L H x x x x x MRS (2nd) L x V V V V V CS FN BA1~BA0 A14~A9 A8 A7 A6~A0 8 Notes: 8. Refer to "MODE REGISTER TABLE". Auto-Refresh Command Table COMMAND (SYMBOL) CURRENT STATE Active WRA (1st) Auto-Refresh REF (2nd) FUNCTION PD n-1 n Standby H H L L x x x x x Active H H L x x x x x x CS FN BA1~BA0 A14~A9 A8 A7 A6~A0 NOTES Self-Refresh Command Table COMMAND (SYMBOL) CURRENT STATE Active WRA (1st) Self-Refresh Entry FUNCTION Self-Refresh Continue Self-Refresh Exit PD NOTES n-1 n Standby H H L L x x x x x REF (2nd) Active H L L x x x x x x Self-Refresh L L x x x x x x x SELFX Self-Refresh L H H x x x x x x 11 COMMAND (SYMBOL) CURRENT STATE CS FN BA1~BA0 A14~A9 A8 A7 A6~A0 NOTES PDEN 10 9, 10 Power Down Table FUNCTION Power Down Entry Power Down Continue Power Down Exit Notes: 9. 10. PD n-1 n Standby H L H x x x x x x Power Down L L x x x x x x x PDEX Power Down L H H x x x x x x 11 PD has to be brought to Low within tFPDL from REF command. PD should be brought to Low after DQ's state turned high impedance. 11. When PD is brought to High from Low, this function is executed asynchronously. 2003-08-04 18/50 TC59LM913/05AMB-50,-55,-60 FUNCTION TRUTH TABLE (continued) CURRENT STATE PD n-1 n CS FN ADDRESS COMMAND ACTION NOTES Idle H H H H H L H H H L L x H L L H L x x H L x x x x BA, UA BA, UA x x x DESL RDA WRA PDEN Row Active for Read H H H H L H H L L x H L H L x x x x x x LA Op-code x x x LAL MRS/EMRS PDEN MRS/EMRS Row Active for Write H H H H L H H L L x H L H L x x x x x x LA x x x x LAL REF PDEN REF (self) Read H H H H H L H H H L L x H L L H L x x H L x x x x BA, UA BA, UA x x x DESL RDA WRA PDEN H H H x x DESL H H H H L H H L L x L L H L x H L x x x BA, UA BA, UA x x x RDA WRA PDEN Data Write & Continue Burst Write to End Illegal Illegal Illegal Illegal Invalid Auto-Refreshing H H H H H L H H H L L x H L L H L x x H L x x x x BA, UA BA, UA x x x DESL RDA WRA PDEN NOP Idle after IREFC Illegal Illegal Self-Refresh Entry Illegal Refer to Self-Refreshing State Mode Register Accessing H H H H H L H H H L L x H L L H L x x H L x x x x BA, UA BA, UA x x x DESL RDA WRA PDEN NOP Idle after IRSC Illegal Illegal Illegal Illegal Invalid H L x L x x x x x x L H H x x PDEX L H L x x Invalid Maintain Power Down Mode Exit Power Down Mode Idle after tPDEX Illegal H L L L x L H H x x H L x x x x x x x x SELFX Invalid Maintain Self-Refresh Exit Self-Refresh Idle after IREFC Illegal Write Power Down Self-Refreshing NOP Row activate for Read Row activate for Write Power Down Entry Illegal Refer to Power Down State 12 Begin Read Access to Mode Register Illegal Illegal Invalid Begin Write Auto-Refresh Illegal Self-Refresh Entry Invalid Continue Burst Read to End Illegal Illegal Illegal Illegal Invalid 13 13 13 13 14 Notes: 12. Illegal if any bank is not idle. 13. Illegal to bank in specified states; Function may be legal in the bank inidicated by Bank Address (BA). 14. Illegal if tFPDL is not satisfied. 2003-08-04 19/50 TC59LM913/05AMB-50,-55,-60 MODE REGISTER TABLE Regular Mode Register (Notes: 1) *1 ADDRESS *1 BA1 BA0 0 0 Register 0 *3 A7 A6~A4 A3 A2~A0 CL BT BL TE A7 TEST MODE (TE) A3 BURST TYPE (BT) 0 Regular (default) 0 Sequential 1 Test Mode Entry 1 Interleave A6 A5 A4 0 0 x Reserved 0 1 0 Reserved 0 1 1 1 0 0 1 A14~A8 0 CAS LATENCY (CL) 1 A2 A1 A0 *2 0 0 0 *2 0 0 1 2 3 0 1 0 4 4 0 1 1 1 x x Reserved *2 1 1 0 Reserved *2 1 1 1 Reserved *2 BURST LENGTH (BL) Reserved Reserved *2 *2 Extended Mode Register (Notes: 4) ADDRESS Register *4 *4 BA1 BA0 0 1 A14~A12 A11 A10~A7 A6 A5~A2 A1 0 0 0 DIC 0 DIC A6 A1 OUTPUT DRIVE IMPEDANCE CONTROL (DIC) 0 0 Normal Output Driver 0 1 Strong Output Driver 1 0 Weaker Output Driver 1 1 Weakest Output Driver *5 A0 DS A0 DLL SWITCH (DS) 0 DLL Enable 1 DLL Disable Notes: 1. Regular Mode Register is chosen using the combination of BA0 = 0 and BA1 = 0. 2. "Reserved" places in Regular Mode Register should not be set. 3. A7 in Regular Mode Register must be set to "0" (low state). Because Test Mode is specific mode for supplier. 4. Extended Mode Register is chosen using the combination of BA0 = 1 and BA1 = 0. 5. A0 in Extended Mode Register must be set to "0" to enable DLL for normal operation. 2003-08-04 20/50 TC59LM913/05AMB-50,-55,-60 STATE DIAGRAM SELFREFRESH POWER DOWN SELFX ( PD = H) PDEX ( PD = H) PD = L PDEN ( PD = L) STANDBY (IDLE) PD = H AUTOREFRESH MODE REGISTER WRA RDA REF MRS ACTIVE (RESTORE) ACTIVE LAL LAL WRITE (BUFFER) READ Command input Automatic return The second command at Active state must be issued 1 clock after RDA or WRA command input. 2003-08-04 21/50 TC59LM913/05AMB-50,-55,-60 TIMING DIAGRAMS SINGLE BANK READ TIMING (CL = 3) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 CLK CLK IRC = 5 cycles Command RDA LAL IRCD=1 cycle Address UA Bank Add. #0 IRC = 5 cycles DESL RDA IRAS = 4 cycles LA LAL IRCD=1 cycle UA IRC = 5 cycles DESL RDA IRAS = 4 cycles LA IRCD=1 cycle UA #0 LAL DESL RDA IRAS = 4 cycles LA UA #0 #0 BL = 2 DQS (output) Hi-Z CL = 3 DQ (output) Hi-Z CL = 3 Q0 Q1 CL = 3 Q0 Q1 Q0 Q1 BL = 4 DQS (output) Hi-Z CL = 3 DQ (output) Hi-Z CL = 3 Q0 Q1 Q2 Q3 CL = 3 Q0 Q1 Q2 Q3 Q0 Q1 Q2 Q3 2003-08-04 22/50 TC59LM913/05AMB-50,-55,-60 SINGLE BANK READ TIMING (CL = 4) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 CLK CLK IRC = 5 cycles IRC = 5 cycles Command RDA LAL IRAS = 4 cycles IRCD=1 Address UA Bank Add. #0 DESL LA RDA LAL IRCD=1 UA DESL IRAS = 4 cycles LA IRC = 5 cycles RDA IRCD=1 UA #0 LAL DESL RDA IRAS = 4 cycles LA UA #0 #0 BL = 2 DQS (output) Hi-Z CL = 4 DQ (output) Hi-Z CL = 4 Q0 Q1 CL = 4 Q0 Q1 Q0 BL = 4 DQS (output) Hi-Z DQ (output) Hi-Z CL = 4 CL = 4 Q0 Q1 Q2 Q3 CL = 4 Q0 Q1 Q2 Q3 Q0 2003-08-04 23/50 TC59LM913/05AMB-50,-55,-60 SINGLE BANK WRITE TIMING (CL = 3) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 CLK CLK IRC = 5 cycles IRC = 5 cycles Command WRA LAL IRCD=1 cycle Address UA Bank Add. #0 DESL WRA IRAS = 4 cycles LA LAL IRCD=1 cycle UA DESL IRC = 5 cycles WRA IRAS = 4 cycles LA IRCD=1 cycle UA #0 LAL DESL WRA IRAS = 4 LA UA #0 #0 BL = 2 DQS (input) WL = 2 DQ (input) WL = 2 D0 D1 WL = 2 D0 D1 D0 D1 BL = 4 DQS (input) WL = 2 DQ (input) WL = 2 D0 D1 D2 D3 WL = 2 D0 D1 D2 D3 D0 D1 D2 D3 2003-08-04 24/50 TC59LM913/05AMB-50,-55,-60 SINGLE BANK WRITE TIMING (CL = 4) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 CLK CLK IRC = 5 cycles IRC = 5 cycles Command WRA LAL Address UA LA Bank Add. #0 DESL WRA LAL UA LA DESL IRC = 5 cycles WRA LAL UA LA #0 DESL WRA UA #0 #0 BL = 2 DQS (input) DQ (input) WL = 3 WL = 3 WL = 3 D0 D1 D0 D1 D0 D1 BL = 4 DQS (input) WL = 3 DQ (input) WL = 3 WL = 3 D0 D1 D2 D3 D0 D1 D2 D3 D0 D1 D2 D3 2003-08-04 25/50 TC59LM913/05AMB-50,-55,-60 SINGLE BANK READ-WRITE TIMING (CL = 3) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 CLK CLK IRC = 5 cycles IRC = 5 cycles Command RDA LAL Address UA LA Bank Add. #0 BL = 2 DQS DESL WRA LAL UA LA BL = 4 DQS LAL UA LA DESL WRA UA #0 #0 Hi-Z Hi-Z CL = 3 WL = 2 Q0 Q1 D0 D1 Q0 Q1 Hi-Z CL = 3 DQ RDA #0 CL = 3 DQ DESL IRC = 5 cycles Hi-Z CL = 3 WL = Q0 Q1 Q2 Q3 D0 D1 D2 D3 Q0 Q1 Q2 Q3 2003-08-04 26/50 TC59LM913/05AMB-50,-55,-60 SINGLE BANK READ-WRITE TIMING (CL = 4) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 CLK CLK IRC = 5 cycles IRC = 5 cycles Command RDA LAL Address UA LA Bank Add. #0 DESL WRA LAL UA LA DESL IRC = 5 cycles RDA LAL UA LA #0 DESL WRA UA #0 #0 BL = 2 DQS Hi-Z CL = 4 DQ Hi-Z WL = 3 Q0 Q1 CL = 4 D0 D1 Q0 BL = 4 DQS Hi-Z CL = 4 DQ Hi-Z WL = 3 Q0 Q1 Q2 Q3 CL = 4 D0 D1 D2 D3 Q0 2003-08-04 27/50 TC59LM913/05AMB-50,-55,-60 MULTIPLE BANK READ TIMING (CL = 3) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 CLK CLK IRBD = 2 cycles Command Address Bank Add. IRBD = 2 cycles IRBD = 2 cyclesIRBD = 2 cycles IRBD = 2 cycles RDA LAL RDA LAL UA LA UA LA Bank "a" DESL RDA UA Bank "b" LAL RDA LAL RDA LAL RDA LAL RDA LAL RDA LA UA LA UA LA UA LA UA LA UA Bank "a" Bank "b" Bank "c" Bank "d" Bank "a" Bank "b" IRC (Bank"a") = 5 cycles IRC (Bank"b") = 5 cycles BL = 2 DQS (output) Hi-Z CL = 3 CL = 3 DQ (output) Hi-Z Qa0Qa1 Qb0Qb1 Qa0Qa1 Qb0Qb1 Qc0Qc1 Qd0Qd1 BL = 4 DQS (output) Hi-Z CL = 3 CL = 3 DQ (output) Hi-Z Qa0Qa1Qa2Qa3Qb0Qb1Qb2Qb3 Qa0Qa1Qa2Qa3Qb0Qb1Qb2Qb3Qc0Qc1Qc2 Qc3Qd0Qd1 Note: lRC to the same bank must be satisfied. 2003-08-04 28/50 TC59LM913/05AMB-50,-55,-60 MULTIPLE BANK READ TIMING (CL = 4) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 CLK CLK IRBD = 2 cycles Command Address Bank Add. IRBD = 2 cycles IRBD = 2 cyclesIRBD = 2 cycles IRBD = 2 cycles RDA LAL RDA LAL UA LA UA LA Bank "a" DESL RDA Bank "b" UA LAL RDA LAL RDA LAL RDA LAL RDA LAL RDA LA UA LA UA LA UA LA UA LA UA Bank "a" Bank "b" Bank "c" Bank "d" Bank "b" Bank "a" IRC (Bank"a") = 5 cycles IRC (Bank"b") = 5 cycles BL = 2 DQS (output) Hi-Z CL = 4 CL = 4 DQ (output) Hi-Z Qa0Qa1 Qb0Qb1 Qa0Qa1 Qb0Qb1 Qc0Qc1 BL = 4 DQS (output) Hi-Z CL = 4 CL = 4 DQ (output) Hi-Z Qa0Qa1Qa2Qa3Qb0Qb1Qb2Qb3 Qa0Qa1Qa2Qa3Qb0Qb1Qb2Qb3Qc0Qc1Qc2 Note: lRC to the same bank must be satisfied. 2003-08-04 29/50 TC59LM913/05AMB-50,-55,-60 MULTIPLE BANK WRITE TIMING (CL = 3) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 CLK CLK IRBD = 2 cycles IRBD = 2 cycles IRBD = 2 cycles IRBD = 2 cycles IRBD = 2 Command Address Bank Add. WRA LAL WRA LAL UA LA UA LA Bank "a" DESL WRA LAL WRA LAL WRA LAL WRA LAL WRA LAL WRA LA UA LA UA LA UA LA UA LA UA UA Bank "b" Bank "a" Bank "b" Bank "c" Bank "d" Bank "a" Bank "b" IRC (Bank"a") = 5 cycles IRC (Bank"b") = 5 cycles BL = 2 DQS (input) WL = 2 WL = 2 DQ (input) Da0 Da1 Db0Db1 Da0Da1 Db0Db1 Dc0 Dc1 Dd0Dd1 BL = 4 DQS (input) WL = 2 WL = 2 DQ (input) Da0 Da1Da2 Da3 Db0Db1Db2Db3 Da0Da1Da2Da3Db0Db1Db2Db3 Dc0 Dc1 Dc2 Dc3 Dd0Dd1Dd0Dd1 Note: lRC to the same bank must be satisfied. 2003-08-04 30/50 TC59LM913/05AMB-50,-55,-60 MULTIPLE BANK WRITE TIMING (CL = 4) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 CLK CLK IRBD = 2 Command Address Bank Add. IRBD = 2 cycles IRBD = 2 cycles IRBD = 2 cycles IRBD = 2 cycles WRA LAL WRA LAL UA LA UA LA Bank "a" DESL WRA UA Bank "b" LAL WRA LAL WRA LAL WRA LAL WRA LAL WRA LA UA LA UA LA UA LA UA LA UA Bank "a" Bank "b" Bank "c" Bank "d" Bank "a" Bank "b" IRC (Bank"a") = 5 cycles IRC (Bank"b") = 5 cycles BL = 2 DQS (input) WL = 3 WL = 3 DQ (input) Da0 Da1 Db0Db1 Da0Da1 Db0Db1 Dc0 Dc1 Dd0Dd1 BL = 4 DQS (input) WL = 3 WL = 3 DQ (input) Da0 Da1Da2Da3Db0Db1Db2Db3 Da0Da1Da2Da3Db0Db1Db2 Db3 Dc0 Dc1 Dc2Dc3 Dd0Dd1 Note: lRC to the same bank must be satisfied. 2003-08-04 31/50 TC59LM913/05AMB-50,-55,-60 MULTIPLE BANK READ-WRITE TIMING (BL = 2) CLK 0 1 2 3 4 5 6 7 8 LAL RDA LAL 9 10 11 12 13 14 15 LAL RDA LAL DESL WRA LA UA LA CLK IRBD = 2 cycles Command WRA LAL RDA IWRD = 1 cycle Address Bank Add. UA Bank "a" LA UA LAL DESL WRA IRWD = 2 cycles IWRD = 1 cycle LA Bank "b" UA Bank "c" LA UA DESL WRA IRWD = 2 cycles LA Bank "d" UA Bank "a" UA Bank "b" Bank "c" IRC (Bank"a") IRC (Bank"b") CL = 3 DQS Hi-Z CL = 3 WL = 2 DQ Hi-Z Da0 Da1 Qb0 Qb1 Dc0 Dc1 Qd0 Qd1 Da0 Da1 CL = 4 DQS Hi-Z CL = 4 WL = 3 DQ Hi-Z Da0 Da1 Qb0 Qb1 Dc0 Dc1 Qd0 Qd1 Da0 Da1 Note: lRC to the same bank must be satisfied. 2003-08-04 32/50 TC59LM913/05AMB-50,-55,-60 MULTIPLE BANK READ-WRITE TIMING (BL = 4) CLK CLK Command 0 1 2 3 Bank Add. 5 6 7 8 9 WRA LAL RDA LAL 10 11 12 13 14 15 WRA LAL RDA LAL IRBD = 2 cycles WRA LAL RDA LAL IWRD = 1 cycle Address 4 UA Bank "a" LA UA DESL IRWD = 3 cycles IWRD = 1 cycle LA UA Bank "b" LA Bank "c" UA DESL IRWD = 3 cycles IWRD = 1 cycle LA UA Bank "d" Bank "a" LA UA LA Bank "b" IRC (Bank"a") IRC (Bank"b") CL = 3 DQS Hi-Z CL = 3 WL = 2 DQ Hi-Z Da0 Da1 Da2 Da3 Qb0 Qb1 Qb2 Qb3 Dc0 Dc1 Dc2 Dc3 Qd0 Qd1 Qd2 Qd3 CL = 4 DQS Hi-Z CL = 4 WL = 3 DQ Hi-Z Da0 Da1 Da2 Da3 Qb0 Qb1 Qb2 Qb3 Dc0 Dc1 Dc2 Dc3 Qd0 Qd1 Qd2 Qd3 Note: lRC to the same bank must be satisfied. 2003-08-04 33/50 TC59LM913/05AMB-50,-55,-60 WRITE with VARIAVLE WRITE LENGTH (VW) CONTROL (CL = 4) 0 1 2 3 4 5 6 WRA LAL UA LA=#1 VW=1 7 8 9 10 11 12 13 14 15 CLK CLK BL = 2, SEQUENTIAL MODE Command Address WRA LAL UA LA=#3 VW=All DESL VW0 = Low VW1 = don't care Bank Add. Bank "a" DESL VW0 = High VW1 = don't care Bank "a" DQS (input) DQ (input) Lower Address D0 D1 D0 #3 #2 #1 (#0) Last one data is masked. BL = 4, SEQUENTIAL MODE Command Address WRA LAL UA LA=#3 VW=All DESL WRA LAL UA LA=#1 VW=1 VW0 = High VW1 = Low Bank Add. Bank "a" DESL WRA LAL UA LA=#2 VW=2 VW0 = High VW1 = High DESL VW0 = Low VW1 = High Bank "a" Bank "a" DQS (input) DQ (input) Lower Address D0 D1 D2 D3 D0 D0 D1 #3 #0 #1 #2 #1(#2)(#3)(#0) #2 #3 (#0)(#1) Last three data are masked. Last two data are masked. Note: DQS input must be continued till end of burst count even if some of laster data is masked. 2003-08-04 34/50 TC59LM913/05AMB-50,-55,-60 POWER DOWN TIMING (CL = 4, BL = 4) Read cycle to Power Down Mode 0 1 2 3 4 5 6 7 8 9 10 n-1 n n+1 n+2 n+3 CLK CLK IPDA Command Address RDA LAL UA LA DESL DESL RDA or WRA UA tIH tIS IPD = 1 cycle PD tQPDH tPDEX lRC(min) , tREFI(max) DQS (output) Hi-Z CL = 4 DQ (output) Hi-Z Hi-Z Q0 Q1 Q2 Q3 Power Down Entry Power Down Exit Note: PD must be kept "High" level until end of Burst data output. PD should be brought to "High" within tREFI(max.) to maintain the data written into cell. In Power Down Mode, PD "Low" and a stable clock signal must be maintained. When PD is brought to "High", a valid executable command may be applied lPDA cycles later. 2003-08-04 35/50 TC59LM913/05AMB-50,-55,-60 POWER DOWN TIMING (CL = 4, BL = 4) Write cycle to Power Down Mode 0 1 2 3 4 5 6 7 8 9 10 n-1 n n+1 n+2 n+3 CLK CLK IPDA Command Address WRA LAL UA LA DESL DESL RDA or WRA UA tIH tIS IPD = 1 cycle PD WL = 3 2 clock cycles tPDEX lRC(min) , tREFI(max) DQS (input) WL = 3 DQ (input) D0 D1 D2 D3 Note: PD must be kept "High" level until WL+2 clock cycles from LAL command. PD should be brought to "High" within tREFI(max.) to maintain the data written into cell. In Power Down Mode, PD "Low" and a stable clock signal must be maintained. When PD is brought to "High", a valid executable command may be applied lPDA cycles later. 2003-08-04 36/50 TC59LM913/05AMB-50,-55,-60 MODE REGISTER SET TIMING (CL = 4, BL = 2) From Read operation to Mode Register Set operation. 0 1 2 3 4 5 6 14 15 RDA or WRA LAL Valid (opcode) UA LA BA0="0" BA1="0" BA 7 8 9 10 11 12 13 CLK CLK IRSC RDA LAL A14~A0 UA LA BA0, BA1 BA Command DESL RDA MRS DESL CL + BL/2 DQS (output) DQ (output) Hi-Z Q0 Q1 Note: Minimum delay from LAL following RDA to RDA of MRS operation is CL+BL/2. 2003-08-04 37/50 TC59LM913/05AMB-50,-55,-60 MODE REGISTER SET TIMING (CL = 4, BL = 4) From Write operation to Mode Register Set operation. 0 1 2 3 4 5 6 14 15 RDA or WRA LAL Valid (opcode) UA LA BA0="0" BA1="0" BA 7 8 9 10 11 12 13 CLK CLK IRSC WRA LAL A14~A0 UA LA BA0, BA1 BA Command DESL RDA MRS DESL WL+BL/2 DQS (input) DQ (input) D0 D1 D2 D3 Note: Minimum delay from LAL following WRA to RDA of MRS operation is WL+BL/2. 2003-08-04 38/50 TC59LM913/05AMB-50,-55,-60 EXTENDED MODE REGISTER SET TIMING (CL = 4, BL = 2) From Read operation to Extended Mode Register Set operation. 0 1 2 3 4 5 6 14 15 RDA or WRA LAL Valid (opcode) UA LA BA0="1" BA1="0" BA 7 8 9 10 11 12 13 CLK CLK IRSC RDA LAL A14~A0 UA LA BA0, BA1 BA Command DESL RDA MRS DESL CL + BL/2 Hi-Z DQS (output) DQ (output) Q0 Q1 Note: Minimum delay from LAL following RDA to RDA of EMRS operation is CL+BL/2. DLL switch in Extended Mode Register must be set to enable mode for normal operation. DLL lock-on time is needed after initial EMRS operation. See Power Up Sequence. 2003-08-04 39/50 TC59LM913/05AMB-50,-55,-60 EXTENDED MODE REGISTER SET TIMING (CL = 4, BL = 4) From Write operation to Extended Mode Register Set operation. 0 1 2 3 4 5 6 14 15 RDA or WRA LAL Valid (opcode) UA LA BA0="1" BA1="0" BA 7 8 9 10 11 12 13 CLK CLK IRSC WRA LAL A14~A0 UA LA BA0, BA1 BA Command DESL RDA MRS DESL WL+BL/2 DQS (input) DQ (input) D0 D1 D2 D3 Note: DLL switch in Extended Mode Register must be set to enable mode for normal operation. DLL lock-on time is needed after initial EMRS operation. See Power Up Sequence. Minimum delay from LAL following WRA to RDA of EMRS operation is WL+BL/2. 2003-08-04 40/50 TC59LM913/05AMB-50,-55,-60 AUTO-REFRESH TIMING (CL = 4, BL = 4) 0 1 2 3 4 5 6 7 n-1 n n+1 n+2 RDA or WRA LAL or MRS or REF CLK CLK IRC = 5 cycles Command RDA LAL Bank, Address Bank, UA LA IRCD=1 cycle DQS (output) Hi-Z DQ (output) Hi-Z IREFC = 18 cycles DESL WRA IRAS = 4 cycles REF DESL IRCD=1 cycle Hi-Z CL = 4 Hi-Z Q0 Q1 Q2 Q3 Note: In case of CL = 4, IREFC must be meet 18 clock cycles. When the Auto-Refresh operation is performed, the synthetic average interval of Auto-Refresh command specified by tREFI must be satisfied. tREFI is average interval time in 8 Refresh cycles that is sampled randomly. t1 t2 t3 t7 t8 CLK WRA REF WRA REF WRA REF WRA REF WRA REF 8 Refresh cycle tREFI = Total time of 8 Refresh cycle 8 = t1 + t2 + t3 + t4 + t5 + t6 + t7 + t8 8 tREFI is specified to avoid partly concentrated current of Refresh operation that is activated larger area than Read / Write operation. 2003-08-04 41/50 TC59LM913/05AMB-50,-55,-60 SELF-REFRESH ENTRY TIMING 0 CLK CLK Command 1 2 3 4 IRCD = 1 cycle WRA m-1 5 m+1 m IREFC REF DESL tFPDL (min) tFPDL (max) Auto Refresh PD Self Refresh Entry *2 IPDV ICKD tQPDH Hi-Z DQS (output) DQ (output) Hi-Z Qx Notes: 1. 2. 3. 4. is don't care. PD must be brought to "Low" within the timing between tFPDL(min) and tFPDL(max) to Self Refresh mode. When PD is brought to "Low" after lPDV, TC59LM913/05AMB perform Auto Refresh and enter Power down mode. In case of PD fall between tFPDL(max) and lPDV, TC59LM913/05AMB will either entry Self-Refresh mode or Power down mode after Auto-Refresh operation. It can't be specified which mode TC59LM913/05AMB operates. It is desirable that clock input is continued at least lCKD from REF command even though PD is brought to "Low" for Self-Refresh Entry. In case of Self-Refresh entry after Write Operation, the delay time from the LAL command following WRA to the REF command is Write latency (WL)+3 clock cycles minimum. SELF-REFRESH EXIT TIMING 0 1 2 m-1 m+1 m m+2 n-1 n n+1 p-1 p CLK CLK *2 *6 IREFC *3 Command DESL IPDA = 1 cycles IREFC WRA *4 *5 *5 REF Command (1st) *6 Command (2nd) DESL IRCD = 1 cycle RDA *7 *7 LAL IRCD = 1 cycle PD tPDEX DQS (output) Hi-Z DQ (output) Hi-Z ILOCK Self-Refresh Exit Notes: 1. is don't care. Clock should be stable prior to PD = "High" if clock input is suspended in Self-Refresh mode. DESL command must be asserted during IREFC after PD is brought to "High". IPDA is defined from the first clock rising edge after PD is brought to "High". It is desirable that one Auto-Refresh command is issued just after Self-Refresh Exit before any other operation. 6. Any command (except Read command) can be issued after IREFC. 7. Read command (RDA + LAL) can be issued after ILOCK. 2. 3. 4. 5. 2003-08-04 42/50 TC59LM913/05AMB-50,-55,-60 FUNCTIONAL DESCRIPTION Network FCRAM TM FCRAMTM is an acronym of Fast Cycle Random Access Memory. The Network FCRAMTM is competent to perform fast random core access, low latency and high-speed data transfer. PIN FUNCTIONS CLOCK INPUTS: CLK & CLK The CLK and CLK inputs are used as the reference for synchronous operation. CLK is master clock input. The CS , FN and all address input signals are sampled on the crossing of the positive edge of CLK and the negative edge of CLK . The DQS and DQ output are aligned to the crossing point of CLK and CLK . The timing reference point for the differential clock is when the CLK and CLK signals cross during a transition. POWER DOWN: PD The PD input controls the entry to the Power Down or Self-Refresh modes. The PD input does not have a Clock Suspend function like a CKE input of a standard SDRAMs, therefore it is illegal to bring PD pin into low state if any Read or Write operation is being performed. CHIP SELECT & FUNCTION CONTROL: CS & FN The CS and FN inputs are a control signal for forming the operation commands on FCRAMTM. Each operation mode is decided by the combination of the two consecutive operation commands using the CS and FN inputs. BANK ADDRESSES: BA0~BA1 The BA0 to BA1 inputs are latched at the time of assertion of the RDA or WRA command and are selected the bank to be used for the operation. BA0 and BA1 also define which mode register is loaded during the Mode Register Set command (MRS or EMRS). BA0 BA1 Bank #0 0 0 Bank #1 1 0 Bank #2 0 1 Bank #3 1 1 8 bank operation can be performed using A14 as follows. BA0 BA1 A14 (BA2) Bank #0 0 0 0 Bank #1 1 0 0 Bank #2 0 1 0 Bank #3 1 1 0 Bank #4 0 0 1 Bank #5 1 0 1 Bank #6 0 1 1 Bank #7 1 1 1 ADDRESS INPUTS: A0~A14 Address inputs are used to access the arbitrary address of the memory cell array within each bank. The Upper Addresses with Bank addresses are latched at the RDA or WRA command and the Lower Addresses are latched at the LAL command. The A0 to A14 inputs are also used for setting the data in the Regular or Extended Mode Register set cycle. UPPER ADDRESS LOWER ADDRESS TC59LM905AMB A0~A14 A0~A8 TC59LM913AMB A0~A14 A0~A7 2003-08-04 43/50 TC59LM913/05AMB-50,-55,-60 DATA INPUT/OUTPUT: DQ0~DQ7 or DQ15 The input data of DQ0 to DQ15 are taken in synchronizing with the both edges of DQS input signal. The output data of DQ0 to DQ15 are outputted synchronizing with the both edges of DQS signal. DATA STROBE: DQS, LDQS / UDQS The DQS is bi-directional signal. Both edge of DQS are used as the reference of data input or output. In write operation, the DQS used as an input signal is utilized for a latch of write data. In read operation, the DQS is an output signal provides the read data strobe. POWER SUPPLY: VDD, VDDQ, VSS, VSSQ VDD and VSS are power supply pins for memory core and peripheral circuits. VDDQ and VSSQ are power supply pins for the output buffer. REFERENCE VOLTAGE: VREF VREF is reference voltage for all input signals. 2003-08-04 44/50 TC59LM913/05AMB-50,-55,-60 COMMAND FUNCTIONS and OPERATIONS TC59LM913/05AMB are introduced the two consecutive command input method. Therefore, except for Power Down mode, each operation mode decided by the combination of the first command and the second command from stand-by states of the bank to be accessed. Read Operation (1st command + 2nd command = RDA + LAL) Issuing the RDA command with Bank Addresses and Upper Addresses to the idle bank puts the bank designated by Bank Address in a read mode. When the LAL command with Lower Addresses is issued at the next clock of the RDA command, the data is read out sequentially synchronizing with the both edges of DQS output signal (Burst Read Operation). The initial valid read data appears after CAS latency from the issuing of the LAL command. The valid data is outputted for a burst length. The CAS latency, the burst length of read data and the burst type must be set in the Mode Register beforehand. The read operated bank goes back automatically to the idle state after lRC. Write Operation (1st command + 2nd command = WRA + LAL) Issuing the WRA command with Bank Addresses and Upper Addresses to the idle bank puts the bank designated by Bank Address in a write mode. When the LAL command with Lower Addresses is issued at the next clock of the WRA command, the input data is latched sequentially synchronizing with the both edges of DQS input signal (Burst Write Operation). The data and DQS inputs have to be asserted in keeping with clock input after CAS latency-1 from the issuing of the LAL command. The DQS has to be provided for a burst length. The CAS latency and the burst type must be set in the Mode Register beforehand. The write operated bank goes back automatically to the idle state after lRC. Write Burst Length is controlled by VW0 and VW1 inputs with LAL command. See VW truth table. Auto-Refresh Operation (1st command + 2nd command = WRA + REF) TC59LM913/05AMB are required to refresh like a standard SDRAM. The Auto-Refresh operation is begun with the REF command following to the WRA command. The Auto-Refresh mode can be effective only when all banks are in the idle state and all outputs are in Hi-Z states. In a point to notice, the write mode started with the WRA command is canceled by the REF command having gone into the next clock of the WRA command instead of the LAL command. The minimum period between the Auto-Refresh command and the next command is specified by lREFC. However, about a synthetic average interval of Auto-Refresh command, it must be careful. In case of equally distributed refresh, Auto-Refresh command has to be issued within once for every 7.8 s by the maximum. In case of burst refresh or random distributed refresh, the average interval of eight consecutive Auto-Refresh commands has to be more than 400 ns always. In other words, the number of Auto-Refresh cycles that can be performed within 3.2 s (8 x 400 ns) is to 8 times in the maximum. Self-Refresh Operation (1st command + 2nd command = WRA + REF with PD = "L") In case of Self-Refresh operation, refresh operation can be performed automatically by using an internal timer. When all banks are in the idle state and all outputs are in Hi-Z states, the TC59LM913/05AMB become Self-Refresh mode by issuing the Self-Refresh command. PD has to be brought to "Low" within tFPDL from the REF command following to the WRA command for a Self-Refresh mode entry. In order to satisfy the refresh period, the Self-Refresh entry command should be asserted within 7.8 s after the latest Auto-Refresh command. Once the device enters Self-Refresh mode, the DESL command must be continued for lREFC period. In addition, it is desirable that clock input is kept in lCKD period. The device is in Self-Refresh mode as long as PD held "Low". During Self-Refresh mode, all input and output buffers are disabled except for PD , therefore the power dissipation lowers. Regarding a Self-Refresh mode exit, PD has to be changed over from "Low" to "High" along with the DESL command, and the DESL command has to be continuously issued in the number of clocks specified by lREFC. The Self-Refresh exit function is asynchronous operation. It is required that one Auto-Refresh command is issued to avoid the violation of the refresh period just after lREFC from Self-Refresh exit. Power Down Mode ( PD = "L") When all banks are in the idle state and DQ outputs are in Hi-Z states, the TC59LM913/05AMB become Power Down Mode by asserting PD is "Low". When the device enters the Power Down Mode, all input and output buffers are disabled after specified time except for PD . Therefore, the power dissipation lowers. To exit the Power Down Mode, PD has to be brought to "High" and the DESL command has to be issued for two clocks cycle after PD goes high. The Power Down exit function is asynchronous operation. 2003-08-04 45/50 TC59LM913/05AMB-50,-55,-60 Mode Register Set (1st command + 2nd command = RDA + MRS) When all banks are in the idle state, issuing the MRS command following to the RDA command can program the Mode Register. In a point to notice, the read mode started with the RDA command is canceled by the MRS command having gone into the next clock of the RDA command instead of the LAL command. The data to be set in the Mode Register is transferred using A0 to A14, BA0 to BA1 address inputs. The TC59LM913/05AMB have two mode registers. These are Regular and Extended Mode Register. The Regular or Extended Mode Register is chosen by BA0 and BA1 in the MRS command. The Regular Mode Register designates the operation mode for a read or write cycle. The Regular Mode Register has four function fields. The four fields are as follows: (R-1) Burst Length field to set the length of burst data (R-2) Burst Type field to designate the lower address access sequence in a burst cycle (R-3) CAS Latency field to set the access time in clock cycle (R-4) Test Mode field to use for supplier only. The Extended Mode Register has four function fields. The three fields are as follows: (E-1) DLL Switch field to choose either DLL enable or DLL disable (E-2) Output Driver Impedance Control field. (E-3) DQS enable field. Once those fields in the Mode Register are set up, the register contents are maintained until the Mode Register is set up again by another MRS command or power supply is lost. The initial value of the Regular or Extended Mode Register after power-up is undefined, therefore the Mode Register Set command must be issued before proper operation. * Regular Mode Register/Extended Mode Register change bits (BA0, BA1). These bits are used to choose either Regular MRS or Extended MRS BA1 BA0 A14~A0 0 0 Regular MRS Cycle 0 1 Extended MRS Cycle 1 x Reserved Regular Mode Register Fields (R-1) Burst Length field (A2 to A0) This field specifies the data length for column access using the A2 to A0 pins and sets the Burst Length to be 2 or 4 words. A2 A1 A0 BURST LENGTH 0 0 0 Reserved 0 0 1 2 words 0 1 0 4 words 0 1 1 Reserved 1 x x Reserved (R-2) Burst Type field (A3) The Burst Type can be chosen Interleave mode or Sequential mode. When the A3 bit is "0", Sequential mode is selected. When the A3 bit is "1", Interleave mode is selected. Both burst types support burst length of 2 and 4 words. A3 BURST TYPE 0 Sequential 1 Interleave 2003-08-04 46/50 TC59LM913/05AMB-50,-55,-60 * Addressing sequence of Sequential mode (A3) A column access is started from the inputted lower address and is performed by incrementing the lower address input to the device. CAS Latency = 4 CLK CLK Command RDA LAL DQS Data Data Data Data 0 1 2 3 DQ Addressing sequence for Sequential mode * DATA ACCESS ADDRESS Data 0 n Data 1 n+1 Data 2 n+2 Data 3 n+3 BURST LENGTH 2 words (address bits is LA0) not carried from LA0~LA1 4 words (address bits is LA1, LA0) not carried from LA1~LA2 Addressing sequence of Interleave mode A column access is started from the inputted lower address and is performed by interleaving the address bits in the sequence shown as the following. Addressing sequence for Interleave mode DATA (R-3) ACCESS ADDRESS BURST LENGTH Data 0 A8 A7 A6 A5 A4 A3 A2 A1 A0 Data 1 A8 A7 A6 A5 A4 A3 A2 A1 A0 Data 2 A8 A7 A6 A5 A4 A3 A2 A1 A0 Data 3 A8 A7 A6 A5 A4 A3 A2 A1 A0 2 words 4 words CAS Latency field (A6 to A4) This field specifies the number of clock cycles from the assertion of the LAL command following the RDA command to the first data read. The minimum values of CAS Latency depends on the frequency of CLK. In a write mode, the place of clock that should input write data is CAS Latency cycles - 1. A6 A5 A4 CAS LATENCY 0 0 0 Reserved 0 0 1 Reserved 0 1 0 Reserved 0 1 1 3 1 0 0 4 1 0 1 Reserved 1 1 0 Reserved 1 1 1 Reserved (R-4) Test Mode field (A7) This bit is used to enter Test Mode for supplier only and must be set to "0" for normal operation. (R-5) Reserved field in the Regular Mode Register * Reserved bits (A8 to A14) These bits are reserved for future operations. They must be set to "0" for normal operation. 2003-08-04 47/50 TC59LM913/05AMB-50,-55,-60 Extended Mode Register fields (E-1) DLL Switch field (A0) This bit is used to enable DLL. When the A0 bit is set "0", DLL is enabled. This bit must be set to "0" for normal operation. (E-2) Output Driver Impedance Control field (A1, A6) This field is used to choose Output Driver Strength. Four types of Driver Strength are supported. (E-3) A6 A1 OUTPUT DRIVER IMPEDANCE CONTROL 0 0 Normal Output Driver 0 1 Strong Output Driver 1 0 Weaker Output Driver 1 1 Weakest Output Driver DQS enable (A10) DQS is not supported. This bit must be always set "0". (E-4) Reserved field (A2 to A5, A7 to A9, A11 to A14) These bits are reserved for future operations and must be set to "0" for normal operation. 2003-08-04 48/50 TC59LM913/05AMB-50,-55,-60 PACKAGE DIMENSIONS P-BGA64-1317-1.00AZ 0.2 S B 0.2 S A 16.5 0 13.086 -0.15 12.7 0 10.975 -0.15 0.15 1.20MAX 0.2 S S 0.4 0.05 0.15MIN 0.1 S 0.5 0.05 0.08 S AB 1.25 B Q P N M L K J H G F E D C B A 3.85 INDEX A 1.0 4 5 6 1.5 1.5 1 2 3 3.85 1.85 1.0 2.0 2003-08-04 49/50 TC59LM913/05AMB-50,-55,-60 RESTRICTIONS ON PRODUCT USE 030619EBA * The information contained herein is subject to change without notice. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The products described in this document are subject to the foreign exchange and foreign trade laws. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 2003-08-04 50/50