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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
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April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1667
Silicon N Channel MOS FET REJ03G0964-0200
(Previous: ADE-208-1 308)
Rev.2.00
Sep 07, 2005
Application
High speed po wer switc hing
Features
• Low on-resistance
• High speed switc hing
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
1. Gate
2. Drain
(Flange
)
3. Source
123
D
G
S
2SK1667
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 250 V
Gate to source voltage VGSS ±30 V
Drain current ID 7 A
Drain peak current ID(pulse)*1 28 A
Body to drain diode reverse drain current IDR 7 A
Channel dissipation Pch*2 50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 250 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
Zero gate voltage drain current IDSS — — 250 µA VDS = 200 V, VGS = 0
Gate to source cutoff volta ge VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 0.4 0.55 Ω I
D = 4 A, VGS = 10 V *3
Forward transfer admittance |yfs| 3.0 5.0 — S ID = 4 A, VDS = 10 V *3
Input capacitan ce Ciss — 690 — pF
Output capacitance Coss — 265 — pF
Reverse transfer capacitance Crss — 45 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 13 — ns
Rise time tr — 55 — ns
Turn-off delay time td(off) — 65 — ns
Fall time tf — 37 — ns
ID = 4 A, VGS = 10 V,
RL = 7.5 Ω
Body to drain diode forward voltage VDF — 1.0 — V IF = 7 A, VGS = 0
Body to drain diode reverse recovery
time trr — 180 — ns IF = 7 A, VGS = 0,
diF/dt = 100 A/µs
Note: 1. Pulse test
2SK1667
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
80
60
40
20
0
Channel Dissipation Pch (W)
50 100 150 200
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Drain Current I
D
(A)
1 3 10 100 300 1000
0.1
0.3
1
3
10
30
100
30
PW = 10 ms (1 shot)
DC Operation (Tc = 25°C)
10 µs
100 µs
1 ms
Ta = 25°C
Maximum Safe Operation Area
Operation in this area
is limited by R
DS(on)
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
0
2
4
6
8
10
14 81216
20
Pulse Test
5.5 V
5 V
4.5 V
10 V
6 V
V
GS
= 4 V
Typical Output Characteristics
Gate to Source Voltage VGS (V)
2
4
6
8
10
02 6810
Drain Current I
D
(A)
Tc = 75°C
25°C
– 25°C
V
DS
= 10 V
Pulse Test
4
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
2
4
6
8
10
048121620
Pulse Test
Drain to Source Saturation Voltage V
DS(on)
(V)
5 A
2 A
I
D
= 10 A
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
0.2 0.5 1 2 5 2010
0.05
0.1
0.2
0.5
2
5
Drain Current ID (A)
Static Drain to Source On State Resistance
R
DS (on)
(Ω)
1
Pulse Test
15 V
V
GS
= 10 V
Static Drain to Source on State Resistance
vs. Drain Current
2SK1667
Rev.2.00 Sep 07, 2005 page 4 of 6
Case Temperature Tc (°C)
Static Drain to Source On State Resistance
RDS(on) (Ω)
– 40 040 80 120 160
0
0.4
0.8
1.2
1.6
2.0
5 A
2 A
Pulse Test
V
GS
= 10 V
I
D
= 10 A
Static Drain to Source on State Resistance
vs. Temperature
Drain Current ID (A)
Forward Transfer Admittance |yfs| (S)
0.1 0.2 0.5 1 2510
0.5
1
2
5
10
20
50
Pulse Test
V
DS
= 10 V
Tc = 75°C
25°C
–25°C
Forward Transfer Admittance
vs. Drain Current
Reverse Drain Current IDR (A)
Reverse Recovery Time trr (ns)
0.2 0.5 1 2 5 10 20
5
10
20
50
100
200
500
di / dt = 100 A / µs
V
GS
= 0, Ta = 25°C
Body to Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS
(V)
Capacitance C (pF)
01020304050
1
10
100
1000
Ciss
Coss
Crss
V
GS
= 0
f = 1 MHz
Typical Capacitance vs. Drain
Source Voltage
Gate Charge Qg (nc)
08
500
Drain to Source Voltage VDS (V)
0
4
8
12
16
20
100 V
100 V
50 V
I
D
= 7 A
V
GS
V
DD
= 50 V
V
DD
= 200 V
V
DS
200 V
Gate to Source Voltage VGS (V)
400
300
200
100
16 24 32 40
Dynamic Input Characteristics
Drain Current ID (A)
Switching Time t (ns)
0.1 0.2 0.5 1 2 5 10
10
20
50
100
200
500
V
GS
= 10 V, V
DD
= 30 V
PW = 2 µs, duty ≤ 1 %
•
•
td (off)
tf
trtd (on)
5
Switching Characteristics
2SK1667
Rev.2.00 Sep 07, 2005 page 5 of 6
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
00.4 0.8 1.2 1.6 2.0
2
4
6
8
10
V
GS
= 10 V
V
GS
= 0, – 5 V
Pulse Test
Reverse Drain Current vs. Source
to Drain Voltage
10 100 1 m 10 m 100 m 110
0.01
0.03
0.1
0.3
1.0
3
Pulse Width PW (S)
Normalized Transient Thermal Impedance
γs
(t)
µµ
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1 shot Pulse
Tc = 25°C
θch – c(t) = s(t) ch – c
ch – c = 2.5°C / W, Tc = 25°C
PD = PW
T
PW
T
DM
γ.
θ
θ
Normalized Transient Thermal Impedance vs. Pulse Width
Vin Monitor
Vout Monitor
R
V 30 V
50
Vin
10 V
D.U.T
DD
L
=
..
Ω
Switching Time Test Circuit
Vin 10 %
90 %
90 %
90 %
10 %
td (on) td (off)
tr tf
V out 10 %
Waveforms
2SK1667
Rev.2.00 Sep 07, 2005 page 6 of 6
Package Dimensions
0.5 ± 0.1
2.54 ± 0.5
0.76 ± 0.1
14.0 ± 0.5 15.0 ± 0.3
2.79 ± 0.218.5 ± 0.57.8 ± 0.5
10.16 ± 0.2
2.54 ± 0.5
1.26 ± 0.15
4.44 ± 0.2
2.7 Max
1.5 Max
11.5 Max
9.5
8.0
1.27
6.4
+0.2
–0.1
φ 3.6
+0.1
–0.08
Package Name
PRSS0004AC-A TO-220AB / TO-220ABV
MASS[Typ.]
1.8gSC-46
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SK1667-E 500 pcs Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
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Colophon .3.0
