CY7C1011
PRELIMINARY
Switching Characteristics[4] Over the Operating Range
7C1011-15 7C1011-20 7C1011-25
Parameter Description Min. Max. Min. Max. Min. Max. Unit
READ CYCLE
tRC Read Cycle Time 15 20 25 ns
tAA Address to Data Valid 15 20 25 ns
tOHA Data Hold from Address Change 3 3 3 ns
tACE CE LOW to Data Valid 15 20 25 ns
tDOE OE LOW to Data Valid 7 8 10 ns
tLZOE OE LOW to Low Z[5] 0 0 0 ns
tHZOE OE HIGH to High Z[5, 6] 7 8 10 ns
tLZCE CE LOW to Low Z[5] 3 3 5 ns
tHZCE CE HIGH to High Z[5, 6] 7 8 10 ns
tPU CE LOW to Power-Up 0 0 0 ns
tPD CE HIGH to Power-Down 15 20 25 ns
tDBE Byte Enable to Data Valid 7 8 10 ns
tLZBE Byte Enable to Low Z 0 0 0 ns
tHZBE Byte Disable to High Z 7 8 10 ns
WRITE CYCLE[7,8]
tWC Write Cycle Time 15 20 25 ns
tSCE CE LOW to Write End 12 13 15 ns
tAW Address Set-Up to Write End 12 13 15 ns
tHA Address Hold from Write End 0 0 0 ns
tSA Address Set-Up to Write Start 0 0 0 ns
tPWE WE Pulse Width 12 13 15 ns
tSD Data Set-Up to Write End 8 9 10 ns
tHD Data Hold from Write End 0 0 0 ns
tLZWE WE HIGH to Low Z[5] 3 3 5 ns
tHZWE WE LOW to High Z[5, 6] 7 8 10 ns
tBW Byte Enable to End of Write 12 13 15 ns
Notes:
4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and 30-pF load capacitance.
5. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
6. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
7. The internal write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a write, and the transition of either of
these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
8. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.