HGTP12N60C3, HGT1S12N60C3S Data Sheet January 2000 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. * 24A, 600V at TC = 25oC The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49123. File Number 4040.4 * 600V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . . . 230ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Ordering Information PART NUMBER PACKAGE BRAND HGTP12N60C3 TO-220AB P12N60C3 HGT1S12N60C3S TO-263AB S12N60C3 JEDEC TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S12N60C3S9A. Symbol GATE EMITTER C COLLECTOR (FLANGE) G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 (c)2001 Fairchild Semiconductor Corporation HGTP12N60C3, HGT1S12N60C3S Rev. A HGTP12N60C3, HGT1S12N60C3S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTP12N60C3, HGT1S12N60C3S 600 UNITS V 24 12 A A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 96 20 30 24A at 600V 104 A V V W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 0.83 100 -40 to 150 260 4 W/oC mJ oC oC s Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 13 s Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25. Electrical Specifications TC = 25oC, Unless Otherwise Specified MIN TYP MAX Collector to Emitter Breakdown Voltage PARAMETER BVCES IC = 250A, VGE = 0V 600 - - V Emitter-Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 24 30 - V Collector to Emitter Leakage Current ICES Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage SYMBOL VCE(SAT) VGE(TH) TEST CONDITIONS VCE = BVCES TC = 25oC - - 250 A VCE = BVCES TC = 150oC - - 1.0 mA IC = IC110, VGE = 15V TC = 25oC - 1.65 2.0 V TC = 150oC - 1.85 2.2 V TC = 25oC 3.0 5.0 6.0 V - - 100 nA VCE(PK) = 480V 80 - - A VCE(PK) = 600V 24 - - A IC = 250A, VCE = VGE IGES VGE = 20V SSOA TJ = 150oC RG = 25 VGE = 15V L = 100H IC = IC110, VCE = 0.5 BVCES - 7.6 - V On-State Gate Charge QG(ON) IC = IC110, VCE = 0.5 BVCES VGE = 15V - 48 55 nC VGE = 20V - 62 71 nC Current Turn-On Delay Time td(ON)I TJ = 150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 25, L = 100H - 14 - ns - 16 - ns - 270 400 ns - 210 275 ns Current Rise Time Current Turn-Off Delay Time Current Fall Time VGEP UNITS trI td(OFF)I tfI Turn-On Energy EON - 380 - J Turn-Off Energy (Note 3) EOFF - 900 - J Thermal Resistance RJC - - 1.2 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTP12N60C3 and HGT1S12N60C3S were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. (c)2001 Fairchild Semiconductor Corporation HGTP12N60C3, HGT1S12N60C3S Rev. A HGTP12N60C3, HGT1S12N60C3S DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s 70 60 50 TC = 150oC 40 TC = 25oC 30 TC = -40oC 20 10 0 4 6 8 10 12 14 PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = 25oC 80 VGE = 15.0V 70 12.0V 60 50 10.0V 40 30 9.0V 20 8.5V 8.0V 10 7.0V 0 0 VGE , GATE TO EMITTER VOLTAGE (V) 80 PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 10V 70 60 50 40 TC = -40oC 30 TC = 150oC 20 TC = 25oC 10 0 0 1 2 3 4 5 80 PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 15V 70 60 40 TC = 150oC 30 20 10 0 0 20 15 10 5 0 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 5. DC COLLECTOR CURRENT vs CASE TEMPERATURE (c)2001 Fairchild Semiconductor Corporation 2 3 4 5 150 FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE tSC , SHORT CIRCUIT WITHSTAND TIME (s) ICE , DC COLLECTOR CURRENT (A) VGE = 15V 50 1 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE 25 TC = 25oC TC = -40oC 50 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 25 10 FIGURE 2. SATURATION CHARACTERISTICS ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 1. TRANSFER CHARACTERISTICS 7.5V 2 4 6 8 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 140 20 VCE = 360V, RG = 25, TJ = 125oC 120 100 15 ISC 80 60 10 40 tSC 5 10 11 12 13 14 20 15 ISC, PEAK SHORT CIRCUIT CURRENT (A) 80 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 6. SHORT CIRCUIT WITHSTAND TIME HGTP12N60C3, HGT1S12N60C3S Rev. A HGTP12N60C3, HGT1S12N60C3S Typical Performance Curves 400 100 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V td(OFF)I , TURN-OFF DELAY TIME (ns) td(ON)I , TURN-ON DELAY TIME (ns) (Continued) 50 VGE = 10V 30 20 VGE = 15V 10 TJ = 150oC, RG = 25, L = 100mH, VCE(PK) = 480V 300 VGE = 15V VGE = 10V 200 100 5 10 15 20 25 30 5 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 15 20 25 30 FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 300 200 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V TJ = 150oC, RG = 25, L = 100mH, VCE(PK) = 480V 100 VGE = 10V tfI , FALL TIME (ns) trI , TURN-ON RISE TIME (ns) 10 ICE , COLLECTOR TO EMITTER CURRENT (A) VGE = 15V 10 200 VGE = 10V or 15V 100 90 80 5 5 10 15 20 25 5 30 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 15 20 25 30 FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT 3.0 2.0 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V EOFF , TURN-OFF ENERGY LOSS (mJ) EON , TURN-ON ENERGY LOSS (mJ) 10 ICE , COLLECTOR TO EMITTER CURRENT (A) 1.5 VGE = 10V 1.0 VGE = 15V 0.5 0 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V 2.5 2.0 1.5 VGE = 10V or 15V 1.0 0.5 0 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT (c)2001 Fairchild Semiconductor Corporation 30 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT HGTP12N60C3, HGT1S12N60C3S Rev. A HGTP12N60C3, HGT1S12N60C3S TJ = 150oC, TC = 75oC RG = 25, L = 100H 100 VGE = 10V VGE = 15V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) 10 PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 1.2oC/W 1 5 10 20 100 TJ = 150oC, VGE = 15V, RG = 25, L = 100H 80 60 LIMITED BY CIRCUIT 40 20 0 0 30 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT VCE , COLLECTOR TO EMITTER VOLTAGE (V) FREQUENCY = 1MHz CIES C, CAPACITANCE (pF) 1500 1000 500 COES CRES 0 0 5 10 15 20 300 400 500 600 25 IG(REF) = 1.276mA, RL = 50, TC = 25oC 600 480 15 12 VCE = 600V 360 9 240 6 VCE = 400V VCE = 200V 120 3 0 0 0 10 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 20 30 40 50 60 QG , GATE CHARGE (nC) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZJC , NORMALIZED THERMAL RESPONSE 200 FIGURE 14. SWITCHING SAFE OPERATING AREA 2500 2000 100 VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V) fMAX , OPERATING FREQUENCY (kHz) 200 (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves FIGURE 16. GATE CHARGE WAVEFORMS 100 0.5 0.2 0.1 10-1 0.05 0.02 t1 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 PD 100 t2 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE (c)2001 Fairchild Semiconductor Corporation HGTP12N60C3, HGT1S12N60C3S Rev. A HGTP12N60C3, HGT1S12N60C3S Test Circuit and Waveform 90% L = 100H 10% VGE RHRP1560 EOFF EON VCE RG = 25 90% + - VDD = 480V ICE 10% td(OFF)I tfI trI td(ON)I FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBD LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. (c)2001 Fairchild Semiconductor Corporation fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I+ tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 19. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). HGTP12N60C3, HGT1S12N60C3S Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H