Die no. A-32 PNP small signal transistor Features Dimensions (Units : mm) * available in an SST3 (SST, SOT-23) package, see page 300 SST3 9+0,2 collector-to-emitter breakdown icear | 0.99%? voltage, BVcEo = 40 V (min) at 0.95 0.95 ee le = 1.0 mA Aw oy J * excellent gain linearity from 100 1A to i (s13 : 100 mA ath 2) 0.2Min. * high transition frequency, / 0.15 846 fr = 250 MHz (min) at lo =10mA TOP VIEW |. woos, * low noise, NF = 3.0 dB max at oa nan Io = 100 pA, f = 10 Hz to 15.7 kHz aT (1) Emitter (2) Base (3) Collector Device types Package Part number Part marking SST6839 RFQ (Sor.23) |BC8578 G3F BC858B G3K Applications * lownoise, high gain, general purpose transistor Absolute maximum ratings (T, = 25C) Parameter Symbol Limits Unit Conditions Collector-to-base voltage | Vopo 50 Vv volgen Vceo 40 Vv Emitter-to-base voltage VERO 5 Vv Collector current Ic 200 mA |DC Power dissipation Po 200 mW_ |For derating, see derating curve following Junction temperature Tj 55 ~ +150 C Surface Mount Transistors ROM 309A-32 Transistors (US/European) PNP Electrical characteristics (unless otherwise noted, T, = 25C) Parameter Symbol| Min |Typical| Max Unit Conditions Collector-to-base = breakdown voltage BVcpo | 50 Vi {lo=50 pA Collector-to-emitter _ breakdown voltage BVceo| 40 Vi |ic=1.0mA Emitter-to-base _ breakdown voltage BVeBo 5 V fle = 10 HA Collector cutoff current IcBo 10 nA |Vcg=35V Emitter cutoff current leBO 50 nA |Vep=SV 80 175 400 Io = 50 pA, Voge = 5.0V 80 175 | 400 Ig = 100 pA, Voge = 5.0V 100 200 500 le = 500 HA, Veg = 5.0V DC current gain hee c HA, Voce 100 300 800 Io = 1 MA, Vog = 5.0V 100 | 300 | 800 Ig = 10 MA, Veg = 5.0 V 100 250 | 600 Io = 50 MA, Voge = 5.0 V Collector-to-emitter V 0.08 | 0.15 V Ic/lg = 10 mA/1.0 mA saturation voltage CE (sat) 0.18 | 0.30 Ic/lp = 50 mA/S.0 mA Base-to-emitter saturation | 0.70 | 0.85 v Ic/lp = 10 mMA/1.O mA voltage BE(sat) 1.00 I/lp = 50 MA/S.0 MA AC current gain Ne 200 300 750 lo = 1.0 mA, Vog = 5.0 V, f = 1 KHz Collector output _ nt. capacitance Cob 40 5.0 pF Ves = 10 V, le =0,f= 1 MHz Collector input _ nee capacitance Cib 16 20 PF |Veg = 0.5 V, Ip =0, f= 1 MHz Transition frequency fr 250 MHz |Veg =90.5 V, Io = 10 mA, f = 100 MHz Io = 100 pA, Voge =5.0V, 5 7 Rg = 10 kQ, f = 10 Hz, bandwidth = 1 Hz Ic = 100 LA, Vce = 5.0 V, 0.8 2 Rg = 10 kQ, f = 1 kHz, Noise figure NF dB [bandwidth = 1 Hz Io = 100 WA, Veg = 5.0V, 0.8 2 Rg = 10 kQ, f = 10 kHz, bandwidth = 1 Hz 1 3 c= 100 nA, Voge = 5.0V, Ag = 10 kQ, f = 10 Hz to 15.7 kHz Note: Minus sign for PNP transistor is omitted 310 ROM Surface Mount TransistorsTransistors (US/European) PNP A-32 Electrical characteristic curves 100 0.7 0.5 0.6 80 Ie-COLLECTOR CURRENT (mA) 40 0.2 20 G.I Ip=0 0 _ 0 1.0 2.0 Vce-COLLECTOR-EMITTER VOLTAGE (V) Figure 1 500 Ic-COLLECTOR CURRENT Ta=25C = 8.0 Bes 7 oOo 5 5 4.0 Ww 4 8 22.0 0 tp=OyuA 0 1.0 2.0 Vce-COLLECTOR-EMITTER VOLTAGE () Figure 2 Voce = 10V 10 100 (mA) (000 Figure 3 Tax z < i00 a Q a ke = 10 5 0.1 1.0 500 Ta= 125C z < a te 100 # 3 8 i 10 5 0.t 1.0 10 Ic-COLLECTOR CURRENT (mA) 100 1000 Figure 4 Surface Mount Transistors 311A-32 Transistors (US/European) PNP 500 Ta=25C Vce =5V t= kHz fhieAC CURRENT GAIN Ss 0.01 0.1 1.0 10 100 Ic-COLLECTOR CURRENT (mA) Figure 5 Ta=25C Icig= 10 we o ny o Vce(sst)-COLLECTOR EMITTER SATURATION VOLTAGE (V) Vee sat) -BASE EMITTER SATURATION VOLTAGE (V) 0 O.t 1.0 10 100 fo-COLLECTOR CURRENT (mA) 0.1 1.0 0 100 Ig-COLLECTOR CURRENT (mA) Figure 6 Figure 7 _ (000 Ta=25C 2 Ic/lg= 10 La Qa < 5 = 8 ua z z z 100 & & y < & M > 10 0.4 1.0 10 100 1.0 10 100 Ip-COLLECTOR CURRENT (mA) Ig-COLLECTOR CURRENT (mA) Figure 8 Figure 9 312 ROM Surface Mount TransistorsTransistors (US/European) PNP A-32 1000 Ta=25C 1000 Ta=25C Voc = 40V Ic = 101g, = [Olga =(0 2 z we 2 100 c = lw 100 wi g n Z s = a 10 10 1.0 10 100 1.0 10 100 Ic-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) Figure 10 Figure 11 1000 a= 100 Voc = 40V Ta=25C ic= 10g, = !0!gp f= IMHz y 2 = F 109 8 10 = 5 z & (0 1 1.0 10 100 0.5 ! 10 50 Ic~COLLECTOR CURRENT (mA) REVERSE BIAS VOLTAGE () Figure 12 Figure 13 80 . B 1000 Ta=25'C s 300MHz Tamzs z Ve =5V La 2 5 = 10 o is x E 8 = = 100 a z < } 3 P Z 4 & Ro 5 a > 0.5 e 10 0.5 | 10 100 500 = as | 10 100 500 Ic-COLLECTOR CURRENT (mA) Ig-COLLECTOR CURRENT (mA) Figure 14 Figure 15 Surface Mount Transistors ROAM 313A-32 Transistors (US/European) PNP (00 1Gn Vca = 30V i g = Ee In 2 10 g 8 & dad y 3 2 100p = te & So 2 3 2 hre a 0p wy 2 g =imA 8 3 =8.75kQ 4 Ip z =270 3 =6.25 x10 8 =17.7 48 - 0.1 O.1lp 0.1 \ 10 100 0 25 50 75 = 100-s*t25Ss*'S0 Ie-COLLECTOR CURRENT (mA) T,AMBIENT TEMPERATURE. (C) Figure 16 Figure 17 Tam25C Vor =5V I= 100 2A Rs = 10k e S # 2 9 re wy 2 2 i 10 100 Vk 10k 100k f-FREQUENCY Figure 18 100k 100k 8 g 10k us 10k Z g b es 3 3 e & 3 Ik 3 Tk 5 5 2 e 190 100 0.01 O.4 ' 10 0.01 0.1 ' 10 Ip-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) Figure 19 Figure 20 314 RONM Surface Mount TransistorsTransistors (US/European) PNP A-32 100k 100k ~ Ta=25C _ Ta = 25C S| vce=5v S Vee =5V = (kHz f= |OkH: if 10k 4 10k 1OkHz z < Zz - < wn ee a ce] ud an = 2 WwW oO 3 ik 3 (k ; g = 2 100 100 0.01 0.1 { 10 0.01 0.1 t 10 Ie~COLLECTOR CURRENT (mA) Ie-COLLECTOR CURRENT (mA) Figure 21 Figure 22 120 i00 z 3 e & 80 3 a & 60 = Oo a 40 5 = oO S 20 a 0 0 25 50 ri 100 125 150 T, AMBIENT TEMPERATURE (C) Figure 23 Surface Mount Transistors ROM 315