MOSFET - Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 mW FCPF125N65S3 Description SUPERFET III MOSFET is ON Semiconductor's brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. www.onsemi.com VDSS RDS(ON) MAX ID MAX 650 V 125 mW @ 10 V 24 A D Features * * * * * * 700 V @ TJ = 150C Typ. RDS(on) = 105 mW Ultra Low Gate Charge (Typ. Qg = 44 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 405 pF) 100% Avalanche Tested These Devices are Pb-Free and are RoHS Compliant G S POWER MOSFET Applications * * * * Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter G D S TO-220F CASE 221AT MARKING DIAGRAM $Y&Z&3&K FCPF 125N65S3 $Y &Z &3 &K FCPF125N65S3 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2017 June, 2020 - Rev. 6 1 Publication Order Number: FCPF125N65S3/D FCPF125N65S3 ABSOLUTE MAXIMUM RATINGS (TC = 25C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V - DC 30 V - AC (f > 1 Hz) 30 - Continuous (TC = 25C) 24* - Continuous (TC = 100C) 15* IDM Drain Current 60* A EAS Single Pulsed Avalanche Energy (Note 2) 115 mJ IAS Avalanche Current (Note 2) 3.7 A EAR Repetitive Avalanche Energy (Note 1) 0.38 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD - Pulsed (Note 1) A Power Dissipation (TC = 25C) 38 W 0.31 W/C -55 to +150 C 300 C - Derate Above 25C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Drain current limited by maximum junction temperature. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 3.7 A, RG = 25 W, starting TJ = 25C. 3. ISD 12 A, di/dt 200 A/ms, VDD 400 V, starting TJ = 25C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJC Thermal Resistance, Junction to Case, Max. 3.24 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. 62.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCPF125N65S3 FCPF125N65S3 TO-220F Tube N/A N/A 50 Units www.onsemi.com 2 FCPF125N65S3 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25_C 650 V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 V DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V IGSS Gate to Body Leakage Current 0.65 V/_C 1 mA 100 nA 4.5 V 125 mW 1.35 VDS = 520 V, TC = 125_C VGS = 30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.54 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 12 A 105 Forward Transconductance VDS = 20 V, ID = 12 A 16 S 1790 pF 40 pF gFS 2.5 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 405 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 60 pF Total Gate Charge at 10 V VDS = 400 V, ID = 12 A, VGS = 10 V (Note 4) 44 nC 12 nC Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge ESR Equivalent Series Resistance 19 nC f = 1 MHz 4 W VDD = 400 V, ID = 12 A, VGS = 10 V, Rg = 4.7 W (Note 4) 22 ns 25 ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 60 ns Turn-Off Fall Time 15 ns tf SOURCE-DRAIN DIODE CHARACTERISTICS Maximum Continuous Source to Drain Diode Forward Current 24 A ISM Maximum Pulsed Source to Drain Diode Forward Current 60 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 12 A 1.2 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VDD = 400 V, ISD = 12 A, dIF/dt = 100 A/ms IS 362 ns 6.36 mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FCPF125N65S3 TYPICAL PERFORMANCE CHARACTERISTICS 100 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 10 6.0 V 5.5 V ID, Drain Current (A) ID, Drain Current (A) 100 1 0.1 0.1 150C 10 25C 250 ms Pulse Test TC = 25C 1 10 VDS, Drain-Source Voltage (V) VDS = 20 V 250 ms Pulse Test 1 20 -55C 3 Figure 1. On-Region Characteristics 100 TC = 25C 0.3 0.2 VGS = 10 V VGS = 20 V 0.1 0.0 0 10 20 40 30 ID, Drain Current (A) 50 150C 1 25C 0.1 -55C 0.01 0.001 0.0 60 1.0 1.5 0.5 VSD, Body Diode Forward Voltage (V) Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100000 VGS, Gate-Source Voltage (V) 10 10000 Capacitances (pF) VGS = 0 V 250 ms Pulse Test 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Ciss 1000 100 9 Figure 2. Transfer Characteristics IS, Reverse Drain Current (A) RDS(ON), Drain-Source On-Resistance (W) 0.4 6 VGS, Gate-Source Voltage (V) Coss 10 VGS = 0 V f = 1 MHz Crss C iss = Cgs + Cgd (Cds = shorted) 1 Coss = Cds + Cgd Crss = Cgd 0.1 0.1 1 10 100 1000 VDS, Drain-Source Voltage (V) 8 VDS = 130 V 6 VDS = 400 V 4 2 0 Figure 5. Capacitance Characteristics ID = 12 A 0 10 20 30 40 Qg, Total Gate Charge (nC) 50 Figure 6. Gate Charge Characteristics www.onsemi.com 4 FCPF125N65S3 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 2.5 VGS = 0 V ID = 10 mA RDS(on), Drain-Source On-Resistance (Normalized) BVDSS, Drain-Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 -50 2.0 1.5 1.0 0.5 0.0 50 100 150 0 TJ, Junction Temperature (5C) VGS = 10 V ID = 12 A -50 0 50 100 150 TJ, Junction Temperature (5C) Figure 8. On-Resistance Variation vs. Temperature Figure 7. Breakdown Voltage Variation vs. Temperature 100 25 100 ms 1 ms 10 ms 10 ID, Drain Current (A) ID, Drain Current (A) 10 ms DC 1 Operation in this Area is Limited by RDS(on) 0.1 0.01 10 100 VDS, Drain-Source Voltage (V) 8 EOSS, (mJ) 50 75 100 125 TC, Case Temperature (5C) 150 Figure 10. Maximum Drain Current vs. Case Temperature 10 6 4 2 130 260 390 520 VDS, Drain to Source Voltage (V) 10 0 25 1000 Figure 9. Maximum Safe Operating Area 0 0 15 5 TC = 25C TJ = 150C Single Pulse 1 20 650 Figure 11. EOSS vs. Drain to Source Voltage www.onsemi.com 5 FCPF125N65S3 r(t), Normalized Effective Transient Thermal Resistance TYPICAL PERFORMANCE CHARACTERISTICS (continued) 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 0.001 -5 10 ZqJC(t) = r(t) x RqJC RqJC = 3.24C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE -4 10 t2 -3 10 -2 -1 10 10 t, Rectangular Pulse Duration (sec) 0 10 Figure 12. Transient Thermal Response Curve www.onsemi.com 6 1 10 2 10 FCPF125N65S3 VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCPF125N65S3 + DUT VDS - ISD L Driver RG Same Type as DUT VGS - dv/dt controlled by RG - ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-220 Fullpack, 3-Lead / TO-220F-3SG CASE 221AT ISSUE A DATE 12 NOV 2013 Scale 1:1 DOCUMENT NUMBER: DESCRIPTION: 98AON67439E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. TO-220 FULLPACK, 3-LEAD / TO-220F-3SG PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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