MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1N4448WX Features l Fast Switching Speed l Ultra Small Surface Mount Package l For General Purpose Switching Applications High Speed Switching Diode 200mW l High Conductance Mechanical Data SOD323 l Case: SOD-323, Molded Plastic l Polarity: Indicated by Cathode Band A B C E Maximum Ratings @ 25oC Unless Otherwise Specified Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Volt. VRM 100 V Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage V RWM 75 V D DC Blocking Voltage VR RMS Reverse Voltage V R(RMS) 53 V Forward Continuous Current(Note1) IF M 500 mA Average Rectified Output Current Io Non-Repetitive Peak @ t=1.0us Forward Surge Current @ t=1.0s IFSM Power Dissipation(Note 1) Thermal Resistance(Note 1) Operation/Storage Temp. Range 250 mA 4 2 A A Pd 200 mW RJA 625 K/W Tj, TSTG H o -65 to +150 C Electrical Characteristics @ 25 C Unless Otherwise Specified o Charateristic Symbol Max Unit 0.720 Maximum Forward VF M Voltage Drop Maximum Peak IR M Reverse Current 0.855 I F =100mA 1.25 I F =150mA uA uA A B C D E G H J DIMENSIONS INCHES MM MIN MAX MIN MAX .090 .107 2.30 2.70 .063 .071 1.60 1.80 .045 .053 1.15 1.35 .031 .045 0.80 1.15 .010 .016 0.25 0.40 .004 .018 0.10 0.45 .004 .010 0.10 0.25 ----.006 ----0.15 NOTE SUGGESTED SOLDER PAD LAYOUT I F =10mA 1 2.5 50 DIM Test Cond. I F =5.0mA V J G 0.074" V R =75V o V R =75V Tj=150 C 0.027" o 30 uA V R =25V Tj=150 C 25 nA V R =20V Junction Capacitance Cj 4 pF V R =0V, f=1.0MHz Reverse Recovery Time t rr 4 ns I F =IR=10mA, I rr=0.1IR , R L=100 OHM 0.022" Note: 1. Valid provided that terminals are kept at ambient temperature Revision: 2 www.mccsemi.com 2005/07/13 MCC 1000 10,000 100 IR, LEAKAGE CURRENT (nA) IF, INSTANTANEOUS FORWARD CURRENT (mA) 1N4448WX 10 1.0 0.1 1000 100 10 VR = 20V 1 0.01 0 1 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Forward Characteristics 0 100 200 Tj, JUNCTION TEMPERATURE (C) Fig. 2 Leakage Current vs Junction Temperature www.mccsemi.com Revision: 2 2005/07/13