silicon Controlled Rectifier 7OC Dim. Inches Millimeter P N Minimum Maximum Minimum Maximum Notes = 4 A --- --- --- --- 1 B 1.050 1.060 26.67 26.92 Cc --- 1.161 --- 29.49 D 5.850 6.144 149.10 156.06 E 6.850 7.375 173.99 187.33 F 197 .827 20.24 21.01 G .276 .286 701 7.26 E H --- .948 --- 24.08 J 425 .499 10.80 12.67 2 K .260 .280 6.60 7M Dia. M 500 .600 12.70 15.24 N 140 150 3.56 3.81 P --- .295 --- 7.49 R --- -900 --- 22.86 Dia. S .225 .275 6.48 6.99 T --- 1.750 --- 44.45 U .370 .380 9.40 9.65 TO-208AD | TO-209AC V 213 223 5.41 5.66 Dia. (TO-83) (TO-94) W .065 .075 1.65 1.91 Dia. X 215 .225 5.46 5.72 Note 1: 1/2-20 UNF3A Y .290 315 7.37 8.00 Note 2: Full thread within 2 1/2 threads Z 514 .530 13.06 13.46 Note 3: For insulated cathode lead, AA .089 .099 2.26 2.51 add suffix "IL" to catalog number Microsemi Forward & Reverse Reverse Transient Catalog Number Repetitive Blocking Blocking e High dv/dt-200 V/usec. Standard Lead Flag Lead 1200 Amperes surge current 70C50B 70C50BF 500 600 Low forward on-state voltage ts tl om oon Package conforming to either TO209AC or 70C1008 70C100BF 1000 1100 Economiod vor genera urpose phase control 70C120B 70C120BF 1200 1300 applications 9 purpose p To specify dv/dt other than 200V/usec., contact factory. Electrical Characteristics Max. RMS on-state current I T(RMS) 110 Amps Tc = 78C Max. average on-state cur. vita) 70 Amps Tc = 78C Max. peak on-state voltage 1.4 Volts ITM = 220 A(peak) Max. holding current im 200 mA Max. peak one cycle surge current ITSM: 1600 A Tc = 78C, 60Hz Max. 12t capability for fusing 124 6000A2S t = 83 ms Thermal and Mechanical Characteristics Operating junction temp range TJ Storage temperature range TSTG Maximum thermal resistance Rouc Typical thermal resistance (greased) Recs Max mounting torque Weight 65C to 125C 65C to 150C 0.28C/W Junction to case 0.20C/W Case to sink 100-130 inch pounds 70C-B Approx. 3.6 ounces (102.0 grams) typical 70C-BF Approx. 3.24 ounces (91.8 grams) typical COLORADO Micr 800 Hoyt Street Broomfield, CO. 80020 roseml 3) <2, www.microsemi.com 11-10-00 Rev. 2JOC Switching Critical rate of rise of on-state current (note 1) di/dt 100A /usec. Ty = 125C Typical delay time (note 1) td 3.0 usec. Typical circuit commuted turn-off time (note 2) tq 100 usec. TJ = 125C Note 1: TM = 50A, YD = YDRM. YGT = 12V open circuit, 20 chm0.1 usec. rise time Note 2: 'TM = 50A, di/dt = 5A/usec., VR during turn-off interval = 50V min., reapplied dv/dt = 20V/usec., linear to rated VDRM, VGT = OV Triggering Max. gate voltage to trigger VeT 3.0V Ty = 25C Max. nontriggering gate voltage Vep 0.25V TJ = 125C Max. gate current to trigger | GT 100mA TJ = 25C Max. peak gate power Pom 15W Average gate power PG(AV) 3.0W tp = 10 usec. Max. peak gate current | GM 4.0A Max. peak gate voltage (forward) Vem 10V Max. peak gate voltage (reverse) Vem 5.0V Blocking Max. leakage current IDRM,!RRM 10mA Ty =125C &V DRM,YRRM Max. reverse leakage IDRM,!RRM 100uA Ty =25C & VDRM.VRRM Critical rate of rise of offstate voltage dv/dt 200V /usec. Ty =125C 11-10-00 Rev. 2JOC Figure 1 Figure 3 Typical Forward OnState Characteristics Maximum Power Dissipation 1 2 140 8000 6000 f180" oo P/V 30 / SW = No Oo = S o 4000 g l S 3 a | a 80 y a Vy = ot LUY oO g y YZ E Y a 1000 20 800 x 600 = 0 0 10 20 30 40 50 60 70 80 90 100 400 Average OnState Current Amperes Figure 4 = 900 Transient Thermal Impedance & 0.7 n + 0.6 100 = a O05 a 60 I 3 0.4 wn oO 1 40 Oc S 8903 g 5 2 Le] 8 ~ 0.2 5 20 S | 5 3 E 0.1 _ @ c oO = 10 3E 0 2 6 10 14 #18 22 26 30 001 01 0.1 1.0 10 100 Instantaneous OnState Voltage Volts Time in Seconds Figure 2 Figure 5 Forward Current Derating o Maximum Nonrepetitive Surge Current Oo Oo 9 130 o 1600 = 120 < 1500 J 5 N\ E 110 SS J 1400 S o '. MX. 5 8 100 SR) E 1300 9 NN 1200 IN : \ 8 NX = 80 1100 N. L NY 5 70 1000 NS x SN oO = 60 3011 607}| 90} 1207] 180 2 900 0 20 40 60 80 100 1 10 100 Average OnState Current Amperes Number of Cycles 11-10-00 Rev. 2