(AA) MOTOROLA MRF 237 | The RF Line Minimum Gain = 12 dB Efficiency = 50% Parameters Heat Dissipation NPN SILICON RF POWER TRANSISTOR ... designed for 12.5 Voit large-signal power amplifier applications in communication equipment operating to 225 MHz. @ Specified 12.5 Volt, 175 MHz Characteristics Output Power = 4.0 Watts _@ Characterized With Series Equivalent Large-Signal impedance @ Grounded Emitter TO-39 Package for High Gain and Excellent @ Replaces Medium Power Stud Mount Devices 4 W 175 MHz RF POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Symbol Voltage VcEO vi VEBO Cc Derate above 25C 45.7 emperature Range stg -65 to +200 R Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Resc 20 cw ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.) { Characteristic | Symbol I Min | Typ | Max [ Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BVcCEO 18 - - Vde {lg = 10 mAdc, Ig = 0) Collector-Emitter Breakdown Voltage BVcEs 36 - - Vdc (lc 75.0 mAdc, Vee = 0) Emitter-Base Breakdown Voltage BVEBO 40 - ~ Vde (te = 1.0 mAde, I = 0) . Collector Cutoff Current Iceo - - 0.25 | mAdc (Vcog = 15 Vde, Ie = 0) , ON CHARACTERISTICS DC Current Gain hee 5.0 - - - (Ig = 250 mAdc, Veg = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance Cob - 15 20 pF (Vcg = 15 Vde, le = 0, f = 0.1 MHz) FUNCTIONAL TESTS Common-Emitter Amplifier Power Gain Gpe 12 14 - dB (Pout = 4.0 W, Voc = 12.5 Vde, Ig (max) = 640 mAdc, f = 175 MHz) Collector Efficiency nN 50 62 =~ % (Pout = 4.0 W, Vcc = 12.5 Vde, Ic (max) = 640 mAdc, f * 175 MHz} 4 oo same ftp STYLE 5: PIN 1. COLLECTOR 2. BASE 3. EMITTER CASE 79-63 9-40MRF237 FIGURE 1 175 MHz TEST CIRCUIT SCHEMATIC Bead AR C7 AR cB ca a + 12.5 Vde 7 La us c4 rT cs rm c10 ae c1,C4,C5 3.0- 180 pF, ARCO 463 Li 1/2 Turn, #16 AWG, 0.5 1.0. c2 1.75 - 30 pF, ARCO 461 L2 1, 416 AWG c3 40 pF, UNELCO L3 0.75". #716 AWG c 0.01 wF, ERIE L4,L5 1 Turn, #16 AWG, 0.5' 1.0. Cc? O.1 uF, ERIE REOCAP L6 0.15 4H Molded Choke cs 1.00F, TANTALUM L7 1.2 #H Molded Choke cs 1000 pF, UNELCO Beads FERRITE Beads, FERROXCUBE C10 100 pF UNELCO #56-570-65/38 RE Output Pout. OUTPUT POWER (WATTS) Pout. OUTPUT POWER (WATTS) = > o FIGURE 2 OUTPUT POWER versus INPUT POWER 100 f= Vec = 12.5 Vde 400 Pin, INPUT POWER (mW) FIGURE 4 OUTPUT POWER versus SUPPLY VOLTAGE 8.0 10 W {= 175 Mz Pin = 200 mW 13 4 15 16 Voc, SUPPLY VOLTAGE (VOLTS) FIGURE 3 OUTPUT POWER versus FREQUENCY 6.0 5.0 40 3.0 Voc = 12.5V Pout. OUTPUT POWER (WATTS) 18 140 160 170 1, FREQUENCY (MHz) FIGURE 5 SERIES EQUIVALENT IMPEDANCE Frequency MHz Zin Ohms Z 0 Phe 150 1,85-j2.63 16.74-21.03 14,63,14.08 175 9-41