VS-ENQ030L120S
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EMIPAK-1B PressFit Power Module
Neutral Point Clamp Topology, 30 A
FEATURES
• Ultrafast Trench IGBT technology
•HEXFRED
® and silicon carbide diode technology
• PressFit pins technology
•Exposed Al
2O3 substrate with low thermal resistance
• Low internal inductances
• PressFit pins locking technology. Patent # US.263.820 B2
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
VS-ENQ030L120S is an integrated solution for a neutral
point clamp topology in a single package. The EMIPAK-1B
package is easy to use thanks to the PressFit pins and the
exposed substrate provides improved thermal performance.
The optimized layout also helps to minimize stray
parameters, allowing for better EMI performance.
PRODUCT SUMMARY
TRENCH IGBT 1200 V STAGE
VCES 1200 V
VCE(ON) typical at IC = 30 A 2.12 V
IC at TC = 102 °C 30 A
TRENCH IGBT 600 V STAGE
VCES 600 V
VCE(ON) typical at IC = 30 A 1.42 V
IC at TC = 106 °C 30 A
Speed 8 kHz to 30 kHz
Package EMIPAK-1B
Circuit
3-levels neutral point clamp topology
EMIPAK-1B
(package example)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Operating junction temperature TJ150 °C
Storage temperature range TStg -40 to +150
RMS isolation voltage VISOL TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s 3500 V
Q1 - Q4 TRENCH IGBT 1200 V
Collector to emitter voltage VCES 1200 V
Gate to emitter voltage VGES ± 30
Pulsed collector current ICM 120 A
Clamped inductive load current ILM (1) 120
Continuous drain current IC
TC = 25 °C 61
ATC = 80 °C 40
TSINK = 80 °C 21
Power dissipation PD
TC = 25 °C 216 W
TC = 80 °C 121
PATENT(S): www.vishay.com/patents
This Vishay product is protected by one or more United States and International patents.
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Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(1) VCC = 600 V, VGE = 15 V, L = 500 μH, Rg = 4.7 , TJ = 150 °C
(2) VCC = 300 V, VGE = 15 V, L = 500 μH, Rg = 4.7 , TJ = 150 °C
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Q2 - Q3 TRENCH IGBT 600 V
Collector to emitter voltage VCES 600 V
Gate to emitter voltage VGES ± 20
Pulsed collector current ICM 130 A
Clamped inductive load current ILM (2) 130
Continuous collector current IC
TC = 25 °C 64
ATC = 80 °C 42
TSINK = 80 °C 25
Power dissipation PD
TC = 25 °C 174 W
TC = 80 °C 97
D1 - D4 HEXFRED ANTIPARALLEL DIODE
Single pulse forward current IFSM 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 180 A
Diode continuous forward current IF
TC = 25 °C 46
ATC = 80 °C 30
TSINK = 80 °C 17
Power dissipation PD
TC = 25 °C 187 W
TC = 80 °C 105
D2 - D3 SILICON CARBIDE ANTIPARALLEL DIODE
Single pulse forward current IFSM 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 150 A
Diode continuous forward current IF
TC = 25 °C 40
ATC = 80 °C 28
TSINK = 80 °C 20
Power dissipation PD
TC = 25 °C 140 W
TC = 80 °C 79
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q1 - Q4 TRENCH IGBT 1200 V
Collector to emitter breakdown voltage BVCES VGE = 0 V, IC = 100 μA 1200 - -
VCollector to emitter voltage VCE(ON)
VGE = 15 V, IC = 30 A - 2.12 2.52
VGE = 15 V, IC = 30 A, TJ = 125 °C - 2.31 -
Gate threshold voltage VGE(th) VCE = VGE, IC = 1.0 mA 2.6 4.6 6.6
Temperature coefficient of threshold
voltage VGE(th)/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 14 - mV/°C
Forward transconductance gfe VCE = 20 V, IC = 30 A - 36 - S
Transfer characteristics VGE VCE = 20 V, IC = 30 A - 7.1 - V
Zero gate voltage collector current ICES
VGE = 0 V, VCE = 1200 V - 0.001 0.23 mA
VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 0.5 -
Gate to emitter leakage current IGES VGE = ± 30 V, VCE = 0 V - - ± 200 nA
ABSOLUTE MAXIMUM RATINGS
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Q2 - Q3 TRENCH IGBT 600 V
Collector to emitter breakdown voltage BVCES VGE = 0 V, IC = 150 μA 600 - -
VCollector to emitter voltage VCE(ON)
VGE = 15 V, IC = 30 A - 1.42 1.87
VGE = 15 V, IC = 30 A, TJ = 125 °C - 1.56 -
Gate threshold voltage VGE(th) VCE = VGE, IC = 1.4 mA 3.6 5.6 7.1
Temperature coefficient of threshold
voltage VGE(th)/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - -17 - mV/°C
Forward transconductance gfe VCE = 20 V, IC = 30 A - 24 - S
Transfer characteristics VGE VCE = 20 V, IC = 30 A - 10 - V
Zero gate voltage collector current ICES
VGE = 0 V, VCE = 600 V - 0.0003 0.23 mA
VGE = 0 V, VCE = 600 V, TJ = 125 °C - 0.028 -
Gate to emitter leakage current IGES VGE = ± 20 V, VCE = 0 V - - ± 200 nA
D1 - D4 ANTIPARALLEL DIODE
Forward voltage drop VFM
IF = 20 A - 2.42 3.18 V
IF = 20 A, TJ = 125 °C - 2.32 -
D2 - D3 ANTIPARALLEL DIODE
Forward voltage drop VFM
IF = 20 A - 1.54 1.8 V
IF = 20 A TJ = 125 °C - 1.86 -
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q1 - Q4 TRENCH IGBT (WITH FREEWHEELING D1 - D4 ANTIPARALLEL DIODE)
Total gate charge (turn-on) QgIC = 30 A
VCC = 600 V
VGE = 15 V
-157-
nCGate to emitter charge (turn-on) Qge -21-
Gate to collector charge (turn-on) Qgc -69-
Turn-on switching loss EON
IC = 30 A
VCC = 600 V
VGE = 15 V
Rg = 4.7 
L = 500 μH (1)
-0.52-
mJTurn-off switching loss EOFF -0.9-
Total switching loss ETOT -1.42-
Turn-on delay time td(on) -93-
ns
Rise time tr-39-
Turn-off delay time td(off) -133-
Fall time tf-156-
Turn-on switching loss EON
IC = 30 A
VCC = 600 V
VGE = 15 V
Rg = 4.7 
L = 500 μH
TJ = 125 °C (1)
-0.64-
mJTurn-off switching loss EOFF -1.61-
Total switching loss ETOT 2.24
Turn-on delay time td(on) -93-
ns
Rise time tr-39-
Turn-off delay time td(off) -136-
Fall time tf-193-
Input capacitance Cies VGE = 0 V
VCC = 30 V
f = 1 MHz
- 3338 -
pFOutput capacitance Coes -124-
Reverse transfer capacitance Cres -75-
Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 120 A, VCC = 600 V,
VP = 1200 V, Rg = 4.7 , VGE = 15 V to 0 V Fullsquare
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
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Note
(1) Energy losses include “tail” and diode reverse recovery.
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q2 - Q3 TRENCH IGBT (WITH FREEWHEELING EXTERNAL TO-247 DIODE DISCRETE 30ETH06)
Total gate charge (turn-on) QgIC = 48 A
VCC = 400 V
VGE = 15 V
-95-
nCGate to emitter charge (turn-on) Qge -28-
Gate to collector charge (turn-on) Qgc -35-
Turn-on switching loss EON
IC = 30 A
VCC = 300 V
VGE = 15 V
Rg = 4.7 
L = 500 μH (1)
-0.23-
mJTurn-off switching loss EOFF -0.26-
Total switching loss ETOT -0.49-
Turn-on delay time td(on) -70-
ns
Rise time tr-31-
Turn-off delay time td(off) -91-
Fall time tf-87-
Turn-on switching loss EON
IC = 30 A
VCC = 300 V
VGE = 15 V
Rg = 4.7 
L = 500 μH
TJ = 125 °C (1)
-0.33-
mJTurn-off switching loss EOFF -0.48-
Total switching loss ETOT -0.61-
Turn-on delay time td(on) -70-
ns
Rise time tr-31-
Turn-off delay time td(off) -96-
Fall time tf-117-
Input capacitance Cies VGE = 0 V
VCC = 30 V
f = 1 MHz
- 3025 -
pFOutput capacitance Coes -245-
Reverse transfer capacitance Cres -90-
Reverse bias safe operating area RBSOA
TJ = 150 °C, IC = 130 A
VCC = 300 V, VP = 600 V
Rg = 4.7 , VGE = 15 V to 0 V
Fullsquare
D1 - D4 ANTIPARALLEL DIODE
Diode reverse recovery time trr VR = 400 V
IF = 20 A
dl/dt = 500 A/μs
-103- ns
Diode peak reverse current Irr -16- A
Diode recovery charge Qrr -800- nC
Diode reverse recovery time trr VR = 400 V
IF = 20 A
dl/dt = 500 A/μs, TJ = 125 °C
-135- ns
Diode peak reverse current Irr -21- A
Diode recovery charge Qrr - 1412 - nC
D2 - D3 ANTIPARALLEL DIODE
Diode reverse recovery time trr VR = 200 V
IF = 20 A
dl/dt = 500 A/μs
-30- ns
Diode peak reverse current Irr -4.8- A
Diode recovery charge Qrr -73-nC
Diode reverse recovery time trr VR = 200 V
IF = 20 A
dl/dt = 500 A/μs, TJ = 125 °C
-31- ns
Diode peak reverse current Irr -5-A
Diode recovery charge Qrr -78-nC
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
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Note
(1) Mounting surface flat, smooth, and greased
Fig. 1 - Typical Q1 - Q4 Trench IGBT 1200 V
Output Characteristics VGE = 15 V
Fig. 2 - Typical Q1 - Q4 Trench IGBT 1200 V
Output Characteristics TJ = 125 °C
INTERNAL NTC - THERMISTOR SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUE UNITS
Resistance R25 TC = 25 °C 5000
R100 TC = 100 °C 493 ± 5 %
B-value B25/50 R2 = R25 exp. [B25/50 (1/T2 - 1/(298.15 K))] 3375 ± 5 % K
Maximum operating temperature 220 °C
Dissipation constant 2mW/°C
Thermal time constant 8s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Q1 - Q4 TRENCH IGBT 1200 V - Junction to case thermal resistance (per switch)
RthJC
- - 0.58
°C/W
Q2 - Q3 TRENCH IGBT 600 V- Junction to case thermal resistance (per switch) - - 0.72
D1 - D4 AP diode - Junction to case thermal resistance (per diode) - - 0.67
D2 - D3 AP diode - Junction to case thermal resistance (per diode) - - 0.89
Q1 - Q4 TRENCH IGBT 1200 V - Case to sink thermal resistance (per switch)
RthCS (1)
-0.75-
Q2 - Q3 TRENCH IGBT 600 V - Case to sink thermal resistance (per switch) - 0.77 -
D1 - D4 AP diode - Case to sink thermal resistance (per diode) - 0.78 -
D2 - D3 AP diode - Case to sink thermal resistance (per diode) - 0.65 -
Case to sink thermal resistance (per module) - 0.1 -
Mounting torque (M4) 2-3Nm
Weight -28-g
VCE (V)
IC (A)
0
5
10
15
20
25
30
35
40
45
50
60
55
0 1.0 1.5 2.0 2.5 3.53.0 4.0
TJ = 150 °C
TJ = 25 °C
TJ = 125 °C
0.5
VCE (V)
IC (A)
60
15
20
25
30
35
40
45
50
55
0
5
10
15
VGE = 12 V
VGE = 15 V
VGE = 18 V
VGE = 9 V
0 4.54.03.53.02.52.01.51.00.5
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Fig. 3 - Maximum Q1 - Q4 Trench IGBT 1200 V
Continuous Collector Current vs. Case Temperature
Fig. 4 - Typical Q1 - Q4 Trench IGBT 1200 V
Transfer Characteristics
Fig. 5 - Typical Q1 - Q4 Trench IGBT 1200 V
Gate Threshold Voltage
Fig. 6 - Typical Q1 - Q4 Trench IGBT 1200 V
Zero Gate Voltage Collector Current
Fig. 7 - Typical Q1 - Q4 Trench IGBT 1200 V
Energy Loss vs. IC (with D1 - D4 Freewheeling Diode),
TJ = 125 °C, VCC = 600 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
Fig. 8 - Typical Q1 - Q4 Trench IGBT 1200 V
Switching Time vs. IC (with D1 - D4 Freewheeling Diode)
TJ = 125 °C, VCC = 600 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
IC - Continuous Collector Current (A)
Allowable Case Temperature (°C)
160
140
40
60
80
100
120
DC
0
20
0 10 20 30 40 50 60 70
VGE (V)
IC (A)
40
45
50
55
60
5
10
15
20
25
30
35
TJ = 25 °C
TJ = 125 °C
0
4.0 5.0 6.0 7.0 8.0 9.0
VCE = 20 V
VGEth (V)
IC (mA)
3.5
4.0
4.5
5.0
5.5
2.0
2.5
3.0
TJ = 25 °C
TJ = 125 °C
0.2 1.61.41.21.00.80.60.4
ICES (mA)
0.01
0.1
1
10
0.0001
0.001
T
J
= 25 °C
T
J
= 150 °C
T
J
= 125 °C
VCES (V)
100 120011001000900800700600500400300200
I
C
(A)
Energy (mJ)
3.0
3.5
0.5
1.0
1.5
2.0
2.5
Eoff
Eon
0
0 10 20 30 40 50 60 70
Switching Time (ns)
IC (A)
1000
10
100
0 10 20 30 40 50 60 70
td(on)
td(off)
tr
tf
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Fig. 9 - Typical Q1 - Q4 Trench IGBT 1200 V
Energy Loss vs. Rg (with D1 - D4 Freewheeling Diode)
TJ = 125 °C, VCC = 600 V, IC = 30 A, VGE = 15 V, L = 500 μH
Fig. 10 - Typical Q1 - Q4 Trench IGBT 1200 V
Switching Time vs. Rg (with D1 - D4 Freewheeling Diode)
TJ = 125 °C, VCC = 600 V, IC = 30 A, VGE = 15 V, L = 500 μH
Fig. 11 - Typical D1 - D4 Antiparallel Diode Forward Characteristics
Fig. 12 - Maximum D1 - D4 Antiparallel Diode
Forward Current vs. Case Temperature
Fig. 13 - Typical D1 - D4 Antiparallel Diode
Reverse Recovery Time vs. dIF/dt
Vrr = 400 V, IF = 20 A
Fig. 14 - Typical D1 - D4 Antiparallel Diode
Reverse Recovery Current vs. dIF/dt
Vrr = 400 V, IF = 20 A
Rg (Ω)
Energy (mJ)
2.0
2.5
3.0
3.5
Eon
0.5
1.0
1.5
0 5 10 15 20 25 30 35 40 45 50 55
Eoff
Switching Time (ns)
R
g
(Ω)
100
1000
10
0 5 10 15 20 25 30 35 40 45 50 55
td(on)
td(off)
tr
tf
V
FM
(V)
I
F
(A)
50
60
0
10
20
30
40
5
0
T
J
= 25 °C
T
J
= 150 °C T
J
= 125 °C
0 0.5 4.03.53.02.52.01.51.0 4.5
IF - Continuous Forward Current (A)
Allowable Case Temperature (°C)
140
160
0
20
40
60
80
100
120
0 10 20 30 40 50 60
130
150
170
190
210
230
250
270
t
rr
(ns)
90
110
130
15
100 200 300 400 500
dI
F
/dt (A/μs)
25 °C
125 °C
8
10
12
14
16
18
20
22
24
I
rr
(A)
4
6
8
100 200 300 400 500
dI
F
/dt (A/μs)
25 °C
125 °C
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Fig. 15 - Typical D1 - D4 Antiparallel Diode
Reverse Recovery Charge vs. dIF/dt
Vrr = 400 V, IF = 20 A
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (Q1 - Q4 Trench IGBT 1200 V)
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (D1 - D4 Antiparallel Diode)
Qrr (nC)
dIF/dt (A/μs)
1700
300
500
700
900
1100
1300
1500
1700
100 200 300 400 500
25 °C
125 °C
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impedance
Junction to Case (°C/W)
0.1
1
10
0.001
0.01
0.
0.00001 0.0001 0.001 0.01 0.1 1 10
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impedance
Junction to Case (°C/W)
0.1
1
10
0.001
0.01
0.
0.00001 0.0001 0.001 0.01 0.1 1 10
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC
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Fig. 18 - Typical Q2 - Q3 Trench IGBT 600 V Output Characteristics
VGE = 15 V
Fig. 19 - Typical Q2 - Q3 Trench IGBT 600 V Output Characteristics
TJ = 125 °C
Fig. 20 - Maximum Q2 - Q3 Trench IGBT 600 V
Continuous Collector Current vs. Case Temperature
Fig. 21 - Typical Q2 - Q3 Trench IGBT 600 V
Transfer Characteristics
Fig. 22 - Typical Q2 - Q3 Trench IGBT 600 V
Gate Threshold Voltage
Fig. 23 - Typical Q2 - Q3 Trench IGBT 600 V
Zero Gate Voltage Collector Current
VCE (V)
IC (A)
2
25
30
35
40
45
50
55
60
0
5
10
15
20
25
0 0.5 1 1.5 2 2.5 3
TJ = 150 °C
TJ = 25 °C
TJ = 125 °C
V
CE
(V)
I
C
(A)
0
5
10
15
20
25
30
35
40
45
50
55
60
0 0.5 1.0 1.5 2.0 2.5 3.0
VGE = 15 V
VGE = 12 V
VGE = 9 V
VGE = 18 V
I
C
-
Continuous Collector Current (A)
Allowable Case Temperature (°C)
0
20
40
60
80
100
120
140
160
0 1020304050607080
DC
V
GE
(V)
I
CE
(A)
0
5
10
15
20
25
30
35
40
45
50
60
55
5 7 8 9 10 1211 13
T
J
= 25 °C
T
J
= 125 °C
6
VCE = 20 V
V
GEth
(V)
I
C
(mA)
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
TJ = 25 °C
TJ = 125 °C
VCES (V)
ICES (mA)
0.00001
0.0001
0.001
0.01
0.1
1
100 200 300 400 500 600
TJ = 25 °C
TJ = 125 °C
TJ = 150 °C
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Fig. 24 - Typical D2 - D3 Antiparallel Diode
Forward Characteristics
Fig. 25 - Maximum D2 - D3 Antiparallel Diode
Forward Current vs. Case Temperature
Fig. 26 - Typical Q2 - Q3 Trench IGBT 600 V Energy Loss vs. IC
(with Freewheeling External TO-247 Diode Discrete 30ETH06 )
TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
Fig. 27 - Typical Q2 - Q3 Trench IGBT 600 V Switching Time vs. IC
(with Freewheeling External TO-247 Diode Discrete 30ETH06)
TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
Fig. 28 - Typical Q2 - Q3 Trench IGBT 600 V Energy Loss vs. Rg
(with Freewheeling External TO-247 Diode Discrete 30ETH06)
TJ = 125 °C, VCC = 300 V, IC =30 A, VGE = 15 V, L = 500 μH
Fig. 29 - Typical Q2 - Q3 Trench IGBT 600 V Switching Time vs. Rg
(with Freewheeling External TO-247 Diode Discrete 30ETH06)
TJ = 125 °C, VCC = 300 V, IC = 30 A, VGE = 15 V, L = 500 μH
V
FM
(V)
I
F
(A)
0
5
10
15
20
25
30
35
40
45
50
55
60
0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
TJ = 25 °C
TJ = 150 °C
TJ = 125 °C
0.5
I
F
-
Continuous
Forward Current (A)
Allowable Case Temperature (°C)
0
20
40
60
80
100
120
140
160
0 5 10 15 20 25 30 35 40 45 50
IC (A)
Energy (mJ)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0 10203040506070
Eon
Eoff
Switching Time (ns)
I
C
(A)
10
100
1000
0 10203040506070
td(off)
td(on)
tf
tr
R
g
(Ω)
Energy (mJ)
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0 5 10 15 20 25 30 35 40 45 50 55
Eon
Eoff
Switching Time (ns)
Rg (Ω)
10
100
1000
0 5 10 15 20 25 30 35 40 45 50 55
td(off)
td(on)
tf
tr
VS-ENQ030L120S
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Revision: 16-Jun-16 11 Document Number: 94684
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Fig. 30 - Typical D2 - D3 Antiparallel Diode
Reverse Recovery Time vs. dIF/dt
Vrr = 200 V, IF = 20 A
Fig. 31 - Typical D2 - D3 Antiparallel Diode
Reverse Recovery Current vs. dIF/dt
Vrr = 200 V, IF = 20 A
Fig. 32 - Typical D2 - D3 Antiparallel Diode
Reverse Recovery Charge vs. dIF/dt
Vrr = 200 V, IF = 20 A
Fig. 33 - Maximum Thermal Impedance ZthJC Characteristics (Q2 - Q3 Trench IGBT 600 V)
t
rr
(ns)
dI
F
/dt (A/μs)
20
25
30
35
40
45
50
55
60
65
70
75
80
100 200 300 400 500
25 °C
125 °C
Irr (A)
dIF/dt (A/μs)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
100 200 300 400 500
25 °C
125 °C
60
65
70
75
80
85
90
100 200 300 400 500
25 °C
125 °C
Q
rr
(nC)
dI
F
/dt (A/μs)
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impedance
Junction to Case (°C/W)
0.1
1
10
0.001
0.01
0.
0.00001 0.0001 0.001 0.01 0.1 1 10
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC
VS-ENQ030L120S
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Revision: 16-Jun-16 12 Document Number: 94684
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 34 - Maximum Thermal Impedance ZthJC Characteristics (D2 - D3 Antiparallel Diode)
ORDERING INFORMATION TABLE
t1 - Rectangular Pulse Duration (s)
Z
thJC - Thermal Impedance
Junction to Case (°C/W)
0.1
1
10
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC
1- Vishay Semiconductors product
2- Package indicator (EN = EMIPAK-1B)
3- Circuit configuration (Q = neutral point clamp topology)
4- Current rating (030 = 30 A)
5- Switch die technology (L = ultrafast Trench IGBT 1200 V and Trench IGBT 600 V)
6- Voltage rating (120 = 1200 V)
7- Diode die technology (S = SiC diode)
Device code
51 32 4 6 7
VS- EN Q 030 L 120 S
VS-ENQ030L120S
www.vishay.com Vishay Semiconductors
Revision: 16-Jun-16 13 Document Number: 94684
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CIRCUIT CONFIGURATION
PACKAGE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95558
DC+
DC+
M
D2
E3 G3
E1
G1
Q2
Q3
Q1
D1
T1
T2
BR
BR
BR
D3
M
DC-
DC-
E4
G4
Q4
D4
1616
12.8 12.8
9.6
3.2
3.2
T1 T2 BR BR BR G4E4
E1
G1
MM
DC-
DC-
DC+ DC+
G3G2E3 E2
3.2
3.2
9.6
12.8 12.8
Outline Dimensions
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Revision: 18-May-17 1Document Number: 95558
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EMIPAK-1B PressFit
DIMENSIONS in millimeters
6.4
33.8 ± 0.5
30.9 ± 0.5
28.1 ± 0.3
20.4 ± 0.3
16.4 ± 0.3
6.4
9.6 9.6
12.8 12.8
3.2
3.2
6.4 6.4
9.6 9.6
12.8 12.8
1616
3.2
3.2
12 ± 0.35
3 ± 0.2
4.1 ± 0.3
Ø 4.3 ± 0.1
53 ± 0.15
62.8 ± 0.5
Ø 2.1 x 8.5
48 ± 0.5
42.5 ± 0.3
37 ± 0.5
Typical pin position 0.4
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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