BAS19 thru BAS21 Vishay Semiconductors formerly General Semiconductor Small-Signal Diodes Mounting Pad Layout 0.031 (0.8) TO-236AB (SOT-23) 0.035 (0.9) .122 (3.1) .110 (2.8) .016 (0.4) Top View 0.079 (2.0) .056 (1.43) .052 (1.33) 3 1 Features .016 (0.4) .045 (1.15) .037 (0.95) .007 (0.175) .005 (0.125) max. .004 (0.1) 2 .037(0.95) .037(0.95) 0.037 (0.95) 0.037 (0.95) .102 (2.6) .094 (2.4) .016 (0.4) Dimensions in inches and (millimeters) * Silicon Epitaxial Planar Diode * Fast switching diode in case SOT-23, especially suited for automatic insertion. * These diodes are also available in other case styles including: the SOD-123 case with the type designations BAV19W to BAV21W, the Mini-MELF case with the type designation BAV101 to BAV103, the DO-35 case with the type designations BAV19 to BAV21 and the SOD-323 case with type designation BAV19WS to BAV21WS. Mechanical Data Marking BAS19 = A8 BAS20 = A81 BAS21 = A82 Top View Case: SOT-23 Plastic Package Weight: approx. 0.008g Packaging Codes/Options: E8/10K per 13" reel (8mm tape), 30K/box E9/3K per 7" reel (8mm tape), 30K/box Maximum Ratings and Thermal Characteristics Parameter (TA = 25C unless otherwise noted) Symbol Value Unit Continuous Reverse Voltage BAS19 BAS20 BAS21 VR 100 150 200 V Repetitive Peak Reverse Voltage BAS19 BAS20 BAS21 VRRM 120 200 250 V Non-Repetitive Peak Forward Current at t = 1s at t = 1s IFSM 2.5 0.5 A IF(AV) 200 (1) mA (2) mA Average Rectified Forward Current (av. over any 20ms period) Forward DC Current at Tamb = 25C IF 200 Repetitive Peak Forward Current IFRM 625 mA Power Dissipation up to Tamb = 25C Ptot 250 (2) mW RJA 430 (2) C/W Junction Temperature Tj 150 C Storage Temperature Range TS -65 to +150 C Thermal Resistance Junction to Ambient Air Notes: (1) Measured under pulse conditions; Pulse time = tp 0.3ms (2) Device on fiberglass substrate, see layout on next page Document Number 88127 14-May-02 www.vishay.com 1 BAS19 thru BAS21 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TJ = 25C unless otherwise noted) Parameter Symbol Test Condition IF = 100mA IF = 200mA Min Typ Max Unit -- -- -- -- 1.0 1.25 mV mV Forward Voltage VF Leakage Current IR VR = VRmax VR = VRmax; Tj = 150C -- -- -- -- 100 100 nA A Dynamic Forward Resistance rf IF = 10mA -- 5 -- Ctot VR = 0 f = 1MHz -- -- 5 pF trr IF = 30mA, IR = 30mA Irr = 3mA, RL = 100 -- -- 50 ns Capacitance Reverse Recovery Time (see figures) (1)Device on fiberglass substrate, see layout (SOT-23). Test Circuit and Waveforms (BAS19, BAS20, BAS21) Input signal Test circuit Waveforms; IR = 3 mA Input Signal - total pulse duration duty factor rise time of reverse pulse reverse pulse duration tp(tot) = 2s = 0.0025 tr = 0.6ns tp = 100ns tr = 0.35ns C < 1pF Oscilloscope - rise time - cicuit capitance* Output signal *C = oscilloscope input capactitance + parasitic capacitance Layout for RJA test Thickness: Fiberglass 0.059 in. (1.5 mm) Copper leads 0.012 in. (0.3 mm) 0.30 (7.5) 0.12 (3) .04 (1) .08 (2) .04 (1) .08 (2) 0.59 (15) 0.03 (0.8) 0.47 (12) 0.2 (5) 0.06 (1.5) 0.20 (5.1) www.vishay.com 2 Document Number 88127 14-May-02