BAS19 thru BAS21
Vishay Semiconductors
for mer ly General Semiconductor
Document Number 88127 www.vishay.com
14-May-02 1
Small-Signal Diodes
Maximum Ratings and Thermal Characteristics (TA= 25°C unless otherwise noted)
Parameter Symbol Value Unit
BAS19 100
Continuous Reverse Voltage BAS20 VR150 V
BAS21 200
BAS19 120
Repetitive Peak Reverse Voltage BAS20 VRRM 200 V
BAS21 250
Non-Repetitive Peak Forward Current at t = 1µsIFSM 2.5 A
at t = 1s 0.5
Average Rectified Forward Current (av. over any 20ms period) IF(AV) 200(1) mA
Forward DC Current at Tamb = 25°CI
F200(2) mA
Repetitive Peak Forward Current IFRM 625 mA
Power Dissipation up to Tamb = 25°CP
tot 250(2) mW
Thermal Resistance Junction to Ambient Air RΘJA 430(2) °C/W
Junction Temper ature Tj150 °C
Storage Temperature Range TS–65 to +150 °C
Notes: (1) Measured under pulse conditions; Pulse time = tp ≤0.3ms
(2) Device on fiberglass substrate, see layout on next page
.016 (0.4)
.056 (1.43)
.037(0.95).037(0.95)
max. .004 (0.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
12
3Top View
.102 (2.6)
.007 (0.175)
.045 (1.15)
.110 (2.8)
.052 (1.33)
.005 (0.125)
.094 (2.4)
.037 (0.95)
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode in case SOT-23, especially
suited for automatic insertion.
• These diodes are also available in other case
styles including: the SOD-123 case with the type
designations BAV19W to BAV21W, the Mini-MELF
case with the type designation BAV101 to BAV103,
the DO-35 case with the type designations BAV19
to BAV21 and the SOD-323 case with type
designation BAV19WS to BAV21WS.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Packaging Codes/Options:
E8/10K per 13”reel (8mm tape), 30K/box
E9/3K per 7”reel (8mm tape), 30K/box
TO-236AB (SOT-23)
Dimensions in inches and (millimeters)
Mounting Pad Layout
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Marking
BAS19 = A8
BAS20 = A81
BAS21 = A82
Top View
BAS19 thru BAS21
Vishay Semiconductors
for mer ly General Semiconductor
www.vishay.com Document Number 88127
214-May-02
Electrical Characteristics (TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
F orward Voltage VFIF = 100mA ——1.0 mV
IF= 200mA ——1.25 mV
Leakage Current IRVR = VRmax ——100 nA
VR = VRmax;Tj= 150°C ——100 µA
Dynamic Forward Resistance rfIF= 10mA —5—Ω
Capacitance Ctot VR= 0 —— 5pF
f = 1MHz
Reverse Recover y Time (see figures) trr IF= 30mA, IR = 30mA ——50 ns
Irr = 3mA, RL= 100Ω
(1)Device on fiberglass substrate, see layout (SOT-23).
0.59 (15)
0.2 (5)
0.03 (0.8 )
0.30 (7.5 )
0.12 (3)
.04 (1)
0.06 (1.5)
0.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
0.47 (12)
Layout for RΘJA test
Thickness: Fiberglass 0.059 in. (1.5 mm)
Copper leads 0.012 in. (0.3 mm)
Test Circuit and Waveforms(BAS19, BAS20, BAS21)
Test circuit
Input Signal - total pulse duration tp(tot) = 2µs
- duty factor δ = 0.0025
- rise time of reverse pulse tr= 0.6ns
- reverse pulse duration tp= 100ns
Oscilloscope - rise time tr= 0.35ns
- cicuit capitance* C < 1pF
*C = oscilloscope input capactitance + parasitic capacitance
Waveforms; IR = 3 mA
Input signal
Output signal
Ω
