AP4407GM-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D D Low On-resistance D D Fast Switching G RoHS Compliant SO-8 S BVDSS -30V RDS(ON) 14m ID -10.7A S S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units -30 V +25 V 3 -10.7 A 3 -8.6 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current -50 A PD@TA=25 Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-amb Parameter Value Unit Maximum Thermal Resistance, Junction-ambient 3 50 /W Data and specifications subject to change without notice 1 200809152 AP4407GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=0V, ID=-250uA 2 Min. Typ. Max. Units -30 - - V - -0.015 - V/ VGS=-10V, ID=-10A - - 14 m VGS=-4.5V, ID=-5A - - 25 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-10A - 13 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V - - -25 uA Gate-Source Leakage VGS= +25V - - +100 nA ID=-10A - 28 45 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-24V - 5.2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 19.8 - nC VDS=-15V - 12 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 11 - ns td(off) Turn-off Delay Time RG=6.8,VGS=-10V - 97 - ns tf Fall Time RD=15 - 72 - ns Ciss Input Capacitance VGS=0V - 1960 3200 pF Coss Output Capacitance VDS=-25V - 590 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 465 - pF Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Min. Typ. Max. Units IS=-2.0A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-10A, VGS=0V, - 36 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 34 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP4407GM-HF 40 T A =25 o C 30 T A =150 o C -10V -5.0V -4.5V -4.0V -ID , Drain Current (A) -ID , Drain Current (A) 40 20 V G =-3.0V 10 -10V -5.0V -4.5V -4.0V 30 20 V G =-3.0V 10 0 0 0 1 2 0 3 -V DS , Drain-to-Source Voltage (V) 1 1 2 2 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 25 1.80 I D =-10A I D =-10A V GS = -10V 1.60 Normalized RDS(ON) RDS(ON) (m) T A =25 o C 20 15 1.40 1.20 1.00 0.80 10 0.60 3 5 7 9 11 -50 0 50 100 150 o -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.6 100.00 2.2 10.00 T j =25 o C -VGS(th) (V) -IS(A) o T j =150 C 1.00 1.8 1.4 0.10 1 0.01 0.6 0.1 0.3 0.5 0.7 0.9 1.1 1.3 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP4407GM-HF I D = -10A V DS = -24V 12 10 Ciss 8 C (pF) -VGS , Gate to Source Voltage (V) f=1.0MH 10000 14 6 1000 Coss Crss 4 2 0 100 0 2 4 6 8 10 12 14 16 18 1 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 100us 10 1ms -ID (A) 9 -V DS , Drain-to-Source Voltage (V) 10ms 1 100ms 1s 10s DC 0.1 T A =25 o C Single Pulse DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 125/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D Millimeters 8 7 6 5 E1 1 2 3 4 e B E SYMBOLS MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 c 0.19 0.22 0.25 D 4.80 4.90 5.00 E 5.80 6.15 6.50 E1 3.80 3.90 4.00 e 1.27 TYP G 0.254 TYP L 0.38 0.90 0.00 4.00 8.00 A A1 G 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement 4407GM YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence If last "S" is numerical letter : Rohs product If last "S" is English letter : HF & Rohs product 5