2SC5024
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
• Excellent high frequency characteristics fT = 300 MHz typ
• High breakdown voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ
• Suitable for wide band video amplifier
• Complimentary pair of 2SA1889
Outline
1. Emitter
2. Collector
3. Base
TO-126FM
123
2SC5024
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 200 V
Collector to emitter voltage VCEO 200 V
Emitter to base voltage VEBO 4V
Collector current IC0.2 A
Collector peak current IC (peak) 0.5 A
Collector power dissipation PC1.4 W
PC*18
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage V(BR)CBO 200 — — V IC = 10 µA, IE = 0
Collector to emitter breakdown
voltage V(BR)CEO 200 — — V IC = 1 mA, RBE = ∞
Emitter to base breakdown
voltage V(BR)EBO 4——VI
E
= 10 µA, IC = 0
Collector cutoff current ICBO ——10µAV
CB = 160 V, IE = 0
DC current 2SC5024B hFE 60 — 120 VCE = 5 V, IC = 10 mA
transfer ratio 2SC5024C hFE 100 — 200
Base to emitter voltage VBE — — 1.0 V VCE = 5 V, IC = 30 mA
Collector to emitter saturation
voltage VCE (sat) — — 1.0 V IC = 30 mA, IB = 3 mA
Gain bandwidth product fT200 300 — MHz VCE = 20 V, IC = 30 mA
Collector output capacitance Cob — 5.0 — pF VCB = 30 V, IE = 0, f = 1 MHz
See characteristic curves of 2SC4704.
2SC5024
3
8
6
4
2
0
Maximum Collector Power Dissipation Curve
Collector Power Dissipation Pc (W)
50 100 150 200
Ta
Tc
2SC5024
4
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
U S A
Tel: 415-589-8300
Fax: 415-583-4207
Hitachi Europe GmbH
Electronic Components Group
Continental Europe
Dornacher Straße 3
D-85622 Feldkirchen
München
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
Hitachi Europe Ltd.
Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA
United Kingdom
Tel: 0628-585000
Fax: 0628-778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 0104
Tel: 535-2100
Fax: 535-1533
Hitachi Asia (Hong Kong) Ltd.
Unit 706, North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel: 27359218
Fax: 27306071
